Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BCR198E6433HTMA1

Part No.:
BCR198E6433HTMA1
Manufacturer:
Infineon Technologies
Category:
Single, Pre-Biased Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBCR198E6433HTMA1.pdf
Description:
TRANS PREBIAS PNP 50V SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,446

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BCR198E6433HTMA1 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = R2 = 47 kΩ), designed for switching, inverting, interface, and driver circuits in automotive and industrial control systems. It features VCEO = 50 V, IC = 100 mA, VCE(sat) ≤ 0.3 V at IC = 10 mA/IB = 0.5 mA, hFE ≥ 70, and AEC-Q101 qualification.

For engineers reviewing the BCR198E6433HTMA1 datasheet, BCR198E6433HTMA1 pinout, BCR198E6433HTMA1 application, or BCR198E6433HTMA1 equivalent, key selection criteria include built-in resistor matching, thermal resistance (RthJS ≤ 240 K/W), SOT23 package compatibility, and guaranteed performance across −40 °C to 125 °C junction temperature range.

Technical Context

This digital transistor integrates two matched PNP transistors in a single SOT23 package with monolithically embedded base bias resistors-enabling direct logic-level interfacing without external components. Its R1/R2 ratio of 0.9–1.1 ensures consistent turn-on/off thresholds and reduces component count in level-shifting and load-switching nodes.

The device operates as a saturated switch with guaranteed VCE(sat) ≤ 0.3 V under defined drive conditions and supports pulse operation up to 300 µs (duty < 2%). Thermal derating follows a defined Ptot vs. TS curve, with maximum power dissipation of 200 mW at TS ≤ 102 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO50 V - Maximum collector-emitter voltage before breakdown; enables use in 24 V automotive supply rails with margin.
IC100 mA - Continuous collector current rating; suitable for driving small relays, LEDs, or MOSFET gates.
VCE(sat)≤ 0.3 V @ IC=10 mA/IB=0.5 mA - Low saturation voltage minimizes power loss and self-heating in switching mode.
hFE≥ 70 @ IC=5 mA/VCE=5 V - Ensures reliable forced beta operation with predictable gain in digital switching applications.
R1 / R247 kΩ ±30% / Ratio 0.9–1.1 - Integrated bias network eliminates external resistors and improves board space efficiency.
fT190 MHz typ. @ IC=10 mA/VCE=5 V - Supports high-speed switching up to ~10 MHz with controlled edge rates.
AEC-Q101Qualified - Meets stress test requirements for automotive electronics, including temperature cycling and HTRB.

Pinout & Package

BCR198E6433HTMA1 is housed in a Pb-free, RoHS-compliant SOT23 plastic package (JEDEC TO-236AB), with standard 3-pin configuration and 1.3 mm pitch. Pin 1 = Base (B), Pin 2 = Emitter (E), Pin 3 = Collector (C).

Pin/TerminalCircuit RoleDesign Meaning
1 (B)Base connection with internal R1–R2 dividerInput node for TTL/CMOS-compatible logic drive; no external bias required.
2 (E)Emiter terminalCommon emitter reference; connects to system ground or negative rail in high-side switch configurations.
3 (C)Collector terminalSwitched output node; sinks current from load to emitter when active.

Key Features

FeatureDesign Value
Integrated bias resistorsR1 = R2 = 47 kΩ ±30%, enabling direct microcontroller GPIO interfacing without external components.
Matched dual-transistor variantBCR198S version offers two isolated, well-matched PNP transistors in one SOT363 package for differential or redundant switching.
Automotive-grade reliabilityAEC-Q101 qualified with guaranteed operation from −40 °C to +125 °C junction temperature.
Thermal robustnessRthJS ≤ 240 K/W allows stable operation up to 200 mW at board temperatures ≤102 °C.
Pb-free & RoHS compliantMeets EU Directive 2011/65/EU; compatible with lead-free reflow soldering profiles (peak 260 °C).

Applications

Automotive Body Control ModuleIndustrial PLC Input Stage

Use Scenario: Driving LED status indicators and small solenoids from 3.3 V/5 V MCU outputs in door modules and lighting controllers.

IC Role / Device Role / Timing Role: Digital switch providing current sinking capability with logic-level compatibility and low VCE(sat).

Use Value: Eliminates need for discrete base resistors and reduces BOM count by one per channel while maintaining AEC-Q101 compliance.

Use Scenario: Level-shifting and isolation between 24 V field sensors and 3.3 V FPGA I/O banks in modular I/O cards.

IC Role / Device Role / Timing Role: Interface transistor translating industrial voltage levels into safe logic inputs with built-in pull-down stability.

Use Value: R1/R2 ratio tolerance ensures consistent Vi(on)/Vi(off) thresholds across temperature, improving noise immunity in noisy factory environments.

Consumer Appliance Power SequencingMedical Diagnostic Equipment Fan Control

Use Scenario: Enabling/disabling auxiliary power rails during boot-up sequences in smart home hubs and HVAC controllers.

IC Role / Device Role / Timing Role: High-side enable switch controlling VDD paths with fast turn-off via emitter-coupled discharge.

Use Value: Guaranteed VCE(sat) ≤ 0.3 V limits power loss to <10 mW at 30 mA load, reducing thermal impact on adjacent analog circuitry.

Use Scenario: PWM-controlled cooling fan driver in portable ultrasound and patient monitors requiring low EMI and silent operation.

IC Role / Device Role / Timing Role: Low-noise saturated switch operating at 25 kHz PWM frequency with minimal overshoot due to fT > 190 MHz.

Use Value: Transition frequency and low Ccb (3 pF) suppress ringing and reduce conducted emissions, easing EMC certification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP digital transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BC807-40,215 (Nexperia)Standard PNP BJT without integrated resistors; requires external RB network.Higher design flexibility but increases component count and layout area.Select when precise bias tuning or higher hFE (>250) is required; not drop-in compatible.
MMBT3906LT1G (ON Semiconductor)Discrete PNP transistor; no built-in resistors; hFE = 100–300, VCE(sat) = 0.4 V typical.Higher gain and wider VCE(sat) spread; less consistent switching threshold.Choose for general-purpose amplification or where tighter VCE(sat) control is unnecessary.

Compared with BC807-40 and MMBT3906LT1G, BCR198E6433HTMA1 delivers reduced bill-of-materials, guaranteed input threshold behavior, and automotive qualification-making it optimal for space-constrained, safety-aware switching nodes where consistency and qualification matter more than raw gain.

Availability

BCR198E6433HTMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, consumer appliance power sequencing, and medical diagnostic equipment requiring stable component supply and AEC-Q101 compliance.

Supply support for BCR198E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certifications including IATF 16949.

The BCR198 series belongs to Infineon's digital transistor product line, engineered specifically for simplified logic interfacing and robust switching in harsh-environment applications such as automotive and industrial automation.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature (Tj) is 150 °C. Continuous operation must ensure Tj stays within this limit, using the provided RthJS ≤ 240 K/W and Ptot vs. TS derating curves. At TS = 102 °C, maximum DC power is 200 mW; exceeding this requires thermal analysis or forced cooling.

Can BCR198E6433HTMA1 be used in high-frequency switching applications above 1 MHz?

Yes-its fT = 190 MHz (typ.) supports clean switching up to ~10 MHz with proper PCB layout and gate drive. However, its primary design intent is digital on/off operation, not RF amplification; parasitic capacitance (Ccb = 3 pF) and saturation recovery time limit ultra-high-speed use.

Is the SOT23 package lead-free and compatible with standard reflow profiles?

Yes-BCR198E6433HTMA1 uses a Pb-free, RoHS-compliant SOT23 package qualified for JEDEC J-STD-020D reflow, with peak temperature tolerance up to 260 °C for 30 seconds. The package meets IPC-A-610 Class 2/3 acceptability standards for automated assembly.

How does the built-in resistor ratio affect logic compatibility with 3.3 V microcontrollers?

With R1/R2 = 0.9–1.1 and Vi(on) = 1–3 V, the device reliably turns on from 3.3 V GPIOs (even with 0.5 V noise margin). Vi(off) ≤ 1.5 V ensures solid cutoff when driven low, making it compatible with both 3.3 V and 5 V logic families without level shifters.

BCR198E6433HTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
47 kOhms
Resistor - Emitter Base (R2):
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
190 MHz
Power - Max:
200 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23

BCR198E6433HTMA1 FAQ

1.How can I place an order for BCR198E6433HTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCR198E6433HTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCR198E6433HTMA1 reliable?

The price and inventory of BCR198E6433HTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCR198E6433HTMA1 is usually 5 days.

3.What payment methods are accepted for BCR198E6433HTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCR198E6433HTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCR198E6433HTMA1?

BCR198E6433HTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCR198E6433HTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCR198E6433HTMA1?

For technical support, including BCR198E6433HTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCR198E6433HTMA1 requirements.

6.How does Aetrix verify that BCR198E6433HTMA1 is sourced from the original manufacturer or authorized distributors?

All BCR198E6433HTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCR198E6433HTMA1 meets industry standards.

7.What is the process for return or replacement of BCR198E6433HTMA1?

All BCR198E6433HTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCR198E6433HTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCR198E6433HTMA1 part is unused and in its original packaging.

Return procedure for BCR198E6433HTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BCR198E6433HTMA1 Tags

  • BCR198E6433HTMA1
  • BCR198E6433HTMA1 PDF
  • BCR198E6433HTMA1 Datasheet
  • BCR198E6433HTMA1 Specifications
  • BCR198E6433HTMA1 Images
  • Infineon Technologies
  • Infineon Technologies BCR198E6433HTMA1
  • Buy BCR198E6433HTMA1
  • BCR198E6433HTMA1 Price
  • BCR198E6433HTMA1 Distributor
  • BCR198E6433HTMA1 Supplier
  • BCR198E6433HTMA1 Wholesale
Related Products
MUN5211T1G
MUN5211T1G

onsemi

DTC043ZEBTL
DTC043ZEBTL

Rohm Semiconductor

DTC114EKAT146
DTC114EKAT146

Rohm Semiconductor

DDTD113ZC-7-F
DDTD113ZC-7-F

Diodes Incorporated

DRDNB16W-7
DRDNB16W-7

Diodes Incorporated

PDTC114ET,215
PDTC114ET,215

Nexperia USA Inc.

PDTC143ZT,215
PDTC143ZT,215

Nexperia USA Inc.

PDTC143ET,215
PDTC143ET,215

Nexperia USA Inc.

PDTC143XT,215
PDTC143XT,215

Nexperia USA Inc.

MMUN2211LT1G
MMUN2211LT1G

onsemi

PDTC144ET,215
PDTC144ET,215

Nexperia USA Inc.

PDTC124ET,215
PDTC124ET,215

Nexperia USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER