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Infineon Technologies BCR198TE6327
- Part No.:
- BCR198TE6327
- Manufacturer:
- Infineon Technologies
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BCR198TE6327.pdf
- Description:
- TRANS PREBIAS PNP 50V SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:27,000
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Product details
Overview
BCR198TE6327 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = R2 = 47 kΩ), designed for switching, inverting, interface, and driver circuits in compact consumer and industrial control systems. It features VCEO = 50 V, IC = 70 mA, VCE(sat) ≤ 0.3 V at IC = 10 mA / IB = 0.5 mA, hFE ≥ 70, and fT = 190 MHz.
For engineers reviewing the BCR198TE6327 datasheet, BCR198TE6327 pinout, BCR198TE6327 application, or BCR198TE6327 equivalent, this part supports reliable low-power logic-level interfacing, level translation, and discrete gate driving where built-in biasing reduces PCB footprint and component count.
Technical Context
This digital transistor integrates two precision-matched 47 kΩ resistors to form a single-base resistor network, enabling direct TTL/CMOS-compatible input drive without external bias components. Its PNP topology provides active-low switching behavior with defined turn-on/off thresholds (Vi(on) = 1–3 V, Vi(off) = 0.8–1.5 V) and tight parameter matching across production lots.
The device operates in common-emitter configuration with guaranteed DC current gain (hFE ≥ 70) and high-frequency capability (fT = 190 MHz), making it suitable for signal conditioning and moderate-speed digital buffering up to ~50 MHz in optimized layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum allowable collector-emitter voltage before breakdown; sets safe operating range for 24 V and 36 V logic interface rails. |
| IC | 70 mA - Continuous collector current rating; supports driving LEDs, small relays, or MOSFET gates in low-side configurations. |
| VCE(sat) | ≤ 0.3 V @ IC=10 mA/IB=0.5 mA - Low saturation voltage minimizes power loss and self-heating during on-state operation. |
| R1 / R2 | 47 kΩ ±30% - Matched internal base bias resistors eliminate need for external pull-up/pull-down networks in digital input stages. |
| fT | 190 MHz - Transition frequency confirms usable bandwidth for pulse shaping, clock buffering, and fast edge-rate applications. |
| Ccb | 3 pF @ VCB=10 V - Low collector-base capacitance preserves signal integrity and limits Miller effect in switching nodes. |
Pinout & Package
BCR198TE6327 is packaged in SC75 (SOT-323), a 3-pin surface-mount package with standard lead pitch of 0.65 mm and thermal resistance RthJS ≤ 105 K/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (B) | Base connection to internal R1–R2 divider node | Single input terminal accepting logic-level signals; internal resistor network sets bias point automatically. |
| 2 (E) | Emitter | Common reference terminal for PNP operation; connects to higher-potential rail (e.g., VCC) in typical switch configurations. |
| 3 (C) | Collector | Output terminal sourcing current when active; used for open-collector-style loads or inverted logic outputs. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated dual bias resistors | Eliminates two external SMT resistors per channel, reducing BOM count and layout area in space-constrained designs. |
| Matched R1/R2 ratio | 0.9–1.1 tolerance ensures consistent input threshold behavior across temperature and process variation. |
| Guaranteed hFE ≥ 70 | Ensures predictable current amplification in saturated switching mode without iterative design margining. |
| Low VCE(sat) | Reduces conduction losses below 3 mW at 10 mA load, supporting thermally constrained PCBs and battery-powered systems. |
Applications
| LED Driver Circuit | Microcontroller Interface |
|---|---|
Use Scenario: Driving indicator LEDs from 3.3 V or 5 V microcontroller GPIO pins with current limiting. IC Role / Device Role / Timing Role: PNP digital transistor acting as low-side sink switch with built-in base biasing. Use Value: Eliminates need for separate base resistor; enables direct GPIO connection while maintaining <10 µA input leakage and <0.3 V saturation drop. | Use Scenario: Level-shifting between 1.8 V FPGA I/O and 5 V peripheral enable lines. IC Role / Device Role / Timing Role: Active-low translator providing clean inversion and rail-to-rail output swing. Use Value: Input threshold (Vi(on) = 1–3 V) ensures robust recognition of 1.8 V high logic; VCEO = 50 V safely isolates higher-voltage domains. |
| Relay Driver Stage | Logic Inverter Buffer |
Use Scenario: Controlling 12 V/24 V electromagnetic relays in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Medium-current PNP switch delivering up to 70 mA collector current with fast turn-off. Use Value: fT = 190 MHz and Ccb = 3 pF minimize switching delay and ringing during relay coil de-energization. | Use Scenario: Inverting noisy digital signals in sensor front-end signal chains before ADC sampling. IC Role / Device Role / Timing Role: Discrete inverter with controlled rise/fall times and defined hysteresis via resistor network. Use Value: Matched R1/R2 and guaranteed Vi(off)/Vi(on) provide stable noise immunity margins (≥0.5 V) at 25 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP digital transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCR198W E6327 | SOT-323 package with identical electrical specs but RthJS = 105 K/W (same as BCR198TE6327); marked "W" instead of "T". | No functional difference; alternate reel marking for same die and assembly lot. | Select when legacy BOM references "W" suffix or distributor stock prioritizes that variant. |
| NSVD120DP033T1G | PNP digital transistor with R1 = 47 kΩ, R2 = open (single-bias), VCEO = 50 V, IC = 100 mA, VCE(sat) ≤ 0.25 V. | Higher current rating and lower saturation voltage, but lacks matched R2 for precise threshold control. | Prefer for higher-current loads (>70 mA); avoid where symmetric input hysteresis is required. |
Compared with BCR198TE6327, BCR198W E6327 offers identical performance in the same package, while NSVD120DP033T1G trades threshold precision for higher drive capability-making the former ideal for signal integrity-critical interfaces and the latter better suited for power-switching roles.
Availability
BCR198TE6327 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller interface modules, relay driver stages, and logic inverter buffers requiring stable component supply and long-term manufacturability.
Supply support for BCR198TE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
BCR198TE6327 belongs to Infineon's BCR family of digital transistors, engineered specifically for cost-sensitive, high-volume consumer and industrial control applications where integration of biasing improves reliability and reduces board area.
FAQ
Is BCR198TE6327 RoHS-compliant and halogen-free?
Yes. BCR198TE6327 meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. Infineon's material declarations confirm ≤900 ppm bromine and ≤900 ppm chlorine in homogeneous materials, with full compliance documented in their official product change notices.
What is the maximum junction temperature and how does it affect derating?
The absolute maximum junction temperature is 150 °C. Power dissipation must be derated linearly above 109 °C case temperature (TS), with Ptot = 250 mW at TS ≤ 109 °C decreasing to zero at 150 °C, per the published Ptot vs. TS curve for the SC75 package.
Can BCR198TE6327 replace a standard PNP BJT like BC807 in existing designs?
Only with schematic modification: BCR198TE6327 has an integrated R1–R2 network tied to the base, so it cannot substitute directly for a bare BJT. External base resistors must be removed, and the input signal must drive the single base terminal-ensuring Vi(on)/Vi(off) thresholds align with source logic levels.
Does BCR198TE6327 support pulsed operation beyond its DC ratings?
Yes. With duty cycle D = 0.02 and pulse width tp = 100 µs, peak power can reach 5× DC rating (1.25 W) due to transient thermal impedance reduction, as shown in the Ptotmax/PtotDC vs. tp graph in the datasheet-enabling short-duration surge handling in relay or solenoid drive.
BCR198TE6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- PNP - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 47 kOhms
- Resistor - Emitter Base (R2):
- 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- Frequency - Transition:
- 190 MHz
- Power - Max:
- 200 mW
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23-3-3
BCR198TE6327 FAQ
1.How can I place an order for BCR198TE6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCR198TE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCR198TE6327 reliable?
The price and inventory of BCR198TE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCR198TE6327 is usually 5 days.
3.What payment methods are accepted for BCR198TE6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCR198TE6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCR198TE6327?
BCR198TE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCR198TE6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCR198TE6327?
For technical support, including BCR198TE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCR198TE6327 requirements.
6.How does Aetrix verify that BCR198TE6327 is sourced from the original manufacturer or authorized distributors?
All BCR198TE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCR198TE6327 meets industry standards.
7.What is the process for return or replacement of BCR198TE6327?
All BCR198TE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BCR198TE6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCR198TE6327 part is unused and in its original packaging.
Return procedure for BCR198TE6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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