Infineon Technologies BCR198WH6327XTSA1

Overview

BCR198WH6327XTSA1 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = R2 = 47 kΩ), designed for switching, inverting, interface, and driver circuits in automotive and industrial control systems. It features V_CEO = 50 V, I_C = 100 mA, V_CE(sat) ≤ 0.3 V at I_C = 10 mA/I_B = 0.5 mA, h_FE ≥ 70, and AEC-Q101 qualification.

For engineers reviewing the BCR198WH6327XTSA1 datasheet, BCR198WH6327XTSA1 pinout, BCR198WH6327XTSA1 application, or BCR198WH6327XTSA1 equivalent, key selection criteria include built-in resistor matching, thermal resistance (R_thJS ≤ 105 K/W), SOT323 package footprint, and guaranteed operation up to T_j = 150 °C in automotive-grade environments.

Technical Context

This device integrates two matched PNP transistors in a single SOT323 package with monolithic bias network (R1/R2 = 1.0 ± 0.1), enabling precise current-controlled switching without external base resistors. Its design supports direct microcontroller GPIO interfacing with defined Vi(on) (1–3 V) and Vi(off) (0.8–1.5 V) thresholds.

The transistor operates in common-emitter configuration with f_T = 190 MHz and C_cb = 3 pF, supporting high-speed digital switching up to ~10 MHz in logic-level applications while maintaining low V_CE(sat) and stable h_FE across −40 °C to +125 °C.

Key Specifications

Pinout & Package

BCR198WH6327XTSA1 uses the SOT323 (SC-70) surface-mount package: 2.1 mm × 1.25 mm × 0.95 mm body, gull-wing leads, 0.65 mm pitch, and moisture sensitivity level 1 (MSL1).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP digital transistor applications.

Compared with BCR198W, the H6327XTSA1 variant adds full traceability (date code, lot ID) and standardized MSL1 handling; versus BC807-40W, it trades higher h_FE for integration, reliability, and AEC-Q101 assurance in safety-critical switching roles.

Availability

BCR198WH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, and smart HVAC actuator interfaces requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for BCR198WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

BCR198WH6327XTSA1 belongs to Infineon's BCR family of digital transistors-designed specifically for automotive-grade signal conditioning, GPIO interfacing, and compact load switching where board space, reliability, and qualification rigor are critical.

FAQ

What is the maximum junction temperature and how does it affect continuous operation?

The absolute maximum junction temperature is 150 °C. At ambient temperatures above 85 °C, derating is required per the P_tot vs. T_S curve: at T_S = 124 °C, maximum continuous power drops to 250 mW. Operation beyond this limit risks parametric shift and accelerated failure, especially under pulsed loads exceeding the permissible P_totmax/P_totDC envelope.

Is BCR198WH6327XTSA1 compatible with lead-free reflow profiles?

Yes. The device is Pb-free and RoHS compliant, qualified for standard JEDEC J-STD-020D Level 1 reflow profiles with peak temperature up to 260 °C. Its SOT323 package has MSL1 rating, meaning unlimited floor life at ≤30 °C/60% RH and no bake requirement prior to assembly.

How does the built-in resistor ratio impact switching performance?

The R1/R2 ratio is tightly controlled at 0.9–1.1, ensuring symmetric turn-on and turn-off characteristics. This minimizes propagation delay mismatch between channels and maintains stable Vi(on) and Vi(off) thresholds across temperature (−40 °C to +125 °C), critical for deterministic timing in automotive communication gateways and sensor interfaces.

Can this part replace a standard PNP transistor like BC807 in existing designs?

Only with schematic and layout revision. BCR198WH6327XTSA1 integrates base resistors and uses a different pinout (B-E-C vs. E-B-C for BC807). Direct substitution would short the base to emitter or leave the base floating. Redesign must account for the digital input structure, reduced external component count, and altered thermal path due to SOT323 package geometry.