Infineon Technologies BCR 199T E6327

Overview

BCR 199T E6327 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistor (R1 = 47 kΩ), designed for low-power switching, interface, and driver circuits in compact consumer and industrial electronics. It features V_CEO = 50 V, I_C = 70 mA, V_CE(sat) ≤ 0.3 V at I_C = 10 mA/I_B = 0.5 mA, h_FE = 120–630, and operates up to T_j = 150 °C in SC75 package.

For engineers reviewing the BCR 199T E6327 datasheet, BCR 199T E6327 pinout, BCR 199T E6327 application, or BCR 199T E6327 equivalent, key selection factors include built-in R1 tolerance (32–62 kΩ), thermal resistance R_thJS = 165 K/W, input on/off voltage thresholds, f_T = 200 MHz, and SC75 footprint compatibility for space-constrained PCB layouts.

Technical Context

This digital transistor integrates a single 47 kΩ base bias resistor (R1) between base and emitter, enabling direct logic-level drive without external components. Its PNP configuration supports high-side switching, level translation, and open-collector interface functions in 3.3 V/5 V systems.

It operates in common-emitter mode with guaranteed DC current gain (h_FE) across I_C = 5 mA and V_CE = 5 V, and exhibits fast switching performance supported by f_T = 200 MHz and C_cb = 3 pF - suitable for signal routing and pulse-width modulation control at sub-MHz frequencies.

Key Specifications

Pinout & Package

BCR 199T E6327 is housed in SC75 (SOT-416) surface-mount package: 1.6 mm × 0.8 mm × 0.5 mm body, 3-terminal, gull-wing leads, tape-and-reel packaging (3,000 pcs/reel, ø180 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP digital transistor applications.

Compared with BCR199T E6327, BCR198T E6327 offers complementary NPN functionality for low-side use cases, while NSV19901T1G trades modest h_FE reduction for better thermal performance - both require logic polarity or gain validation in final design.

Availability

BCR 199T E6327 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller interface stages, power sequencing control, and relay driver applications requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for BCR 199T E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete power devices, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

BCR 199T E6327 belongs to Infineon's BCR series of digital transistors, engineered for simplified logic interfacing and compact switching in cost-sensitive, space-constrained applications across consumer, industrial, and automotive domains.

FAQ

What is the function of the built-in resistor R1 in BCR 199T E6327?

The integrated 47 kΩ resistor (R1) connects internally between base and emitter, enabling direct connection to logic outputs without external biasing components. It sets predictable base current for saturation, reduces PCB footprint, and improves assembly yield in high-volume production. R1 tolerance is specified as 32–62 kΩ per datasheet.

Can BCR 199T E6327 replace a standard PNP BJT like BC807 in existing designs?

Yes, but only if the circuit relies on external base resistors and can accommodate the fixed R1 configuration. Unlike BC807, BCR 199T E6327 cannot operate in linear amplification mode due to internal resistor topology. It must be validated for saturation voltage, gain margin, and switching speed in the target application.

What is the maximum allowable ambient temperature for continuous operation?

At 70 mA collector current and free-air conditions, the maximum ambient temperature depends on board thermal design. With R_thJS = 165 K/W and P_tot = 250 mW, T_A must remain ≤ 70 °C to keep junction temperature below 150 °C. Derating is required above 25 °C ambient per the P_tot vs. T_S curve for SC75 package.

Is BCR 199T E6327 compliant with AEC-Q101 for automotive use?

No - BCR 199T E6327 is not AEC-Q101 qualified. While its absolute maximum ratings (e.g., T_j = 150 °C, V_CEO = 50 V) meet some automotive stress requirements, it lacks the qualification testing (HTOL, TC, ESD, etc.) required for automotive-grade discrete transistors. For automotive applications, consider Infineon's AEC-Q101 qualified BCR199BH6327XTSA1 variant.