Infineon Technologies BCR 519 E6327

Overview

BCR519 E6327 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistor (R1 = 4.7 kΩ), designed for switching, inverter, and driver circuits. It supports 50 V V_CEO, 500 mA I_C, 330 mW P_tot at T_S ≤ 79 °C, and delivers h_FE of 120–630 at I_C = 50 mA / V_CE = 5 V - used in LED driver stages and logic-level interface buffers.

For engineers reviewing the BCR519 E6327 datasheet, BCR519 E6327 pinout, BCR519 E6327 application, or BCR519 E6327 equivalent, key selection criteria include built-in R1 tolerance (3.2–6.2 kΩ), V_CE(sat) ≤ 0.3 V at I_C = 50 mA/I_B = 2.5 mA, input voltage thresholds (V_i(on): 0.5–1.5 V; V_i(off): 0.4–0.8 V), and SOT23 package thermal resistance (R_thJS ≤ 215 K/W).

Technical Context

This digital transistor integrates a single 4.7 kΩ base bias resistor (R1) between base and input terminal, eliminating external bias components in low-speed switching applications. Its common-emitter configuration operates with guaranteed h_FE ≥ 120 up to I_C = 50 mA and maintains V_CE(sat) ≤ 0.3 V under specified drive conditions.

The device exhibits f_T = 100 MHz (typ.) at I_C = 50 mA / V_CE = 5 V, supporting moderate-frequency digital signal routing. Input voltage thresholds are defined at fixed collector current conditions: V_i(on) tested at I_C = 10 mA / V_CE = 0.3 V; V_i(off) at I_C = 100 µA / V_CE = 5 V - enabling reliable logic-level interfacing with TTL/CMOS outputs.

Key Specifications

Pinout & Package

SOT23-3 plastic surface-mount package (JEDEC TO-236AB); 1.3 mm × 2.9 mm footprint; 1.15 mm height; gull-wing leads; marking "XKs" on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar digital transistor applications.

Compared with BC847B,215, BCR519 E6327 saves two passives and simplifies layout; versus NSVD5001MW6T1G, it offers lower cost and broader availability for 24 V and below applications, though with looser R1 tolerance and no dual-resistor configuration.

Availability

BCR519 E6327 is available at Aetrix Electronics and suitable for LED driver stages, microcontroller GPIO expansion, relay coil driving, and industrial logic interface applications requiring stable component supply and SOT23 footprint compatibility.

Supply support for BCR519 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete power devices, with global manufacturing and quality certification to ISO/TS 16949.

The BCR519 belongs to Infineon's digital transistor product line, engineered for space-constrained digital switching applications where integration of bias resistors reduces bill-of-materials and improves assembly yield in high-volume consumer and industrial electronics.

FAQ

What is the function of Pin 1 on the BCR519 E6327?

Pin 1 is the Base terminal, internally connected to the 4.7 kΩ bias resistor (R1). It serves as the input node for logic-level signals - applying voltage here turns on the transistor without requiring external base resistors. The internal R1 pulls the base toward the input, enabling direct connection to MCU GPIOs or logic gates.

Can the BCR519 E6327 replace a standard NPN transistor like BC847 in all circuits?

No - it cannot directly replace standard BJTs in circuits requiring adjustable base bias, linear amplification, or emitter-follower configurations. Its integrated R1 fixes the base drive path, making it unsuitable for analog gain stages or applications needing variable current gain. Use only in digital switching roles where its input threshold and saturation characteristics match the design.

What is the maximum ambient temperature for continuous operation at full 500 mA current?

At I_C = 500 mA, power dissipation reaches ~150 mW (assuming V_CE(sat) ≈ 0.3 V). With R_thJA ≈ 350 K/W (typ. for SOT23 on 1-in² 1-oz copper), junction temperature rise is ~53 °C. To stay within T_j ≤ 150 °C, maximum ambient must be ≤ 97 °C - but derating per Infineon's P_tot vs. T_S curve limits usable I_C to ~350 mA above 79 °C case temperature.

Does the BCR519 E6327 have built-in ESD protection?

No - the datasheet does not specify HBM or CDM ESD ratings. While the device withstands normal handling per JEDEC JESD22-A114, it lacks dedicated on-chip ESD structures. For I/O lines exposed to connectors or cables, external TVS diodes or series resistors are recommended to prevent latch-up or junction damage during transient events.