Infineon Technologies BCR562E6327HTSA1

Overview

BCR562E6327HTSA1 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = R2 = 4.7 kΩ), rated for 50 V V_CEO, 500 mA I_C, and 330 mW P_tot at T_S ≤ 79 °C, commonly used in automotive lighting control and low-side switching interfaces.

For engineers reviewing the BCR562E6327HTSA1 datasheet, BCR562E6327HTSA1 pinout, BCR562E6327HTSA1 application, or BCR562E6327HTSA1 equivalent, key selection criteria include input threshold voltage range (Vi(on): 1–2.2 V), saturation voltage (V_CEsat ≤ 0.3 V @ 50 mA), h_FE ≥ 60, AEC-Q101 qualification, and SOT23 package compatibility.

Technical Context

This device implements a monolithic PNP bipolar junction transistor with two laser-trimmed on-chip base resistors enabling direct logic-level drive without external bias components. It operates in common-emitter configuration with guaranteed DC current gain (h_FE ≥ 60) at I_C = 50 mA and V_CE = 5 V.

Thermal performance is defined by R_thJS ≤ 215 K/W and derated power dissipation down to zero at T_S = 150 °C. Its transition frequency f_T = 150 MHz supports moderate-speed switching in automotive signal conditioning circuits.

Key Specifications

Pinout & Package

BCR562E6327HTSA1 is housed in a RoHS-compliant SOT23 plastic surface-mount package (JEDEC TO-236AB), with standard 1.3 mm × 2.9 mm footprint and 0.95 mm height. Pin 1 = Base (B), Pin 2 = Emitter (E), Pin 3 = Collector (C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP digital transistor applications.

Compared with BCR562E6327HTSA1, BC562H6327XTSA1 offers identical performance in smaller reels for prototyping, while NSVD5112MUT1G provides reduced current capability and bandwidth-suitable only for signal-level switching where 500 mA drive is unnecessary.

Availability

BCR562E6327HTSA1 is available at Aetrix Electronics and suitable for automotive lighting systems, industrial PLC output stages, and consumer appliance motor control requiring stable component supply and AEC-Q101 compliance.

Supply support for BCR562E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

BCR562 belongs to Infineon's automotive-qualified digital transistor product line, designed specifically for robust, resistor-equipped switching in harsh-environment electronic control units (ECUs) and body electronics modules.

FAQ

What is the maximum allowable junction temperature for BCR562E6327HTSA1?

The absolute maximum junction temperature (T_j) is 150 °C, as specified in the Infineon datasheet. Operation above this value risks permanent degradation of the PNP transistor structure and integrated resistors. Thermal design must ensure R_thJS ≤ 215 K/W and board-level heat spreading to maintain T_j within limits under worst-case ambient and power dissipation conditions.

Can BCR562E6327HTSA1 be used in high-frequency switching applications?

Yes, with limitations: its f_T = 150 MHz supports switching frequencies up to ~20 MHz in small-signal amplification, but practical digital switching is constrained by stored charge and saturation recovery time. For PWM-driven loads like LEDs, it performs reliably up to 100 kHz; beyond that, V_CEsat rise and switching losses increase significantly due to minority-carrier lifetime effects.

Is BCR562E6327HTSA1 pin-compatible with standard SOT23 NPN transistors?

No - although physically compatible with SOT23 footprints, BCR562E6327HTSA1 is a PNP device with Base-Emitter-Collector pinout (1-B, 2-E, 3-C), whereas most NPN SOT23 transistors use E-B-C or C-B-E configurations. Substituting without circuit redesign will reverse polarity and prevent proper switching function.

Does BCR562E6327HTSA1 require external flyback protection when driving inductive loads?

Yes - while the device withstands 50 V V_CEO, inductive kickback during turn-off can exceed this rating. A reverse-biased diode (e.g., BAS21) must be placed across the load (anode to emitter, cathode to collector) to clamp voltage spikes and protect the internal junction and bias resistors from avalanche overstress.