onsemi BCV27_D87Z

Overview

BCV27_D87Z from NXP Semiconductors is an NPN Darlington transistor in SOT23 package, designed for low-voltage preamplifier input stages with 30 V V_CES, 500 mA I_C, and minimum DC current gain of 4,000 at 1 mA collector current. It delivers high signal amplification in space-constrained analog front-ends.

For engineers reviewing the BCV27_D87Z datasheet, pinout, applications, or equivalent options, key selection criteria include its Darlington architecture for ultra-high h_FE, SOT23 footprint compatibility, 30 V breakdown rating, and suitability for low-noise sensor interface and audio preamp circuits.

Technical Context

The BCV27_D87Z integrates two cascaded NPN transistors in a single SOT23 die to achieve minimum h_FE of 4,000 at I_C = 1 mA and 20,000 at I_C = 100 mA, enabling high-gain amplification without external bias network complexity. Its V_CES = 30 V and V_CBO = 40 V define safe operation in sub-36 V systems.

Thermal resistance R_th(j-a) is 500 K/W on FR4 PCB, limiting continuous power dissipation to 250 mW at T_amb ≤ 25 °C. Saturation voltages are V_CEsat ≤ 1 V and V_BEsat ≤ 1.5 V at I_C = 100 mA / I_B = 0.1 mA, confirming efficient switching and linear operation in low-drop applications.

Key Specifications

Pinout & Package

SOT23 plastic surface-mounted package (TO-236AB), 3-lead, dimensions per JEDEC outline: D = 2.9 mm, E = 1.3 mm, L_p = 0.95 mm, body height A = 1.1 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington transistor applications.

Compared with BCV47 and MMBT5401, BCV27_D87Z uniquely balances ultra-high gain (≥4,000), 30 V robustness, and SOT23 size-making it the preferred choice for compact, low-power, high-impedance analog amplification where gain stability and minimal base loading are critical.

Availability

BCV27_D87Z is available at Aetrix Electronics and suitable for audio preamplifier circuits, sensor signal conditioning modules, and industrial logic interface designs requiring stable component supply and consistent SOT23 packaging.

Supply support for BCV27_D87Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

The BCV27_D87Z belongs to NXP's legacy discrete transistor portfolio, engineered specifically for high-gain, low-voltage analog signal amplification in space-constrained surface-mount applications.

FAQ

What is the maximum collector-emitter voltage rating for BCV27_D87Z?

The BCV27_D87Z has a maximum collector-emitter voltage (V_CES) of 30 V under open-base conditions. This rating defines the absolute upper limit for DC or peak voltage across collector and emitter in linear or switching operation. Exceeding this value risks permanent device failure. The BCV27_D87Z is therefore suited for 24 V systems with margin but not for 48 V industrial buses without additional clamping.

Does BCV27_D87Z have a documented pinout compatible with standard SOT23 footprints?

Yes, BCV27_D87Z uses the standard SOT23 (TO-236AB) pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This matches JEDEC MS-012 and industry-standard SOT23 land patterns. No adapter or layout modification is needed when replacing other SOT23-packaged NPN transistors with identical pin assignment, though electrical characteristics must still be verified for functional equivalence.

What is the minimum DC current gain (h_FE) of BCV27_D87Z at 100 mA collector current?

The BCV27_D87Z guarantees a minimum DC current gain (h_FE) of 20,000 at I_C = 100 mA and V_CE = 5 V. This ultra-high gain enables very low base drive current-typically ≤5 µA for 100 mA output-making BCV27_D87Z ideal for interfacing with high-impedance sources or low-drive microcontrollers without external gain staging.

Can BCV27_D87Z be used in switching applications, and what is its saturation voltage?

Yes, BCV27_D87Z is suitable for low-speed switching applications. Its collector-emitter saturation voltage (V_CEsat) is guaranteed ≤1 V at I_C = 100 mA and I_B = 0.1 mA. This low saturation drop ensures minimal conduction loss and thermal stress during on-state operation, supporting reliable performance in LED drivers and relay interfaces up to several kHz.

Is there a PNP complement to BCV27_D87Z, and what is its part number?

Yes, the PNP complement to BCV27_D87Z is BCV26. Both share identical SOT23 packaging and complementary voltage/current ratings: BCV26 offers V_ECS = 30 V, I_C = −500 mA, and matching high h_FE. This pairing enables balanced push-pull or complementary amplifier topologies while maintaining footprint consistency-critical for minimizing PCB area in dual-rail analog designs.