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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BCV72,215

Name: BCV72,215
Brand: Nexperia USA Inc.
SKU: BCV72,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCV72,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BCV72,215.pdf

Description:: TRANS NPN 60V 0.1A TO-236AB

Quantity:: RFQ Add To RFQ list

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Inventory:55,520

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Product details

Overview

BCV72,215 from Nexperia is an NPN general-purpose bipolar junction transistor in a SOT23 (TO-236AB) surface-mount package, rated for 60 V V_CEO, 100 mA I_C, and DC current gain (h_FE) of 200–450 at 2 mA. It serves as a low-voltage, low-current switch or small-signal amplifier in discrete logic interfaces and sensor signal conditioning circuits.

For engineers reviewing the BCV72,215 datasheet, BCV72,215 pinout, BCV72,215 application, or BCV72,215 equivalent, key selection criteria include verified h_FE range at 2 mA, V_CE(sat) ≤ 210 mV at 50 mA/2.5 mA drive, thermal resistance of 500 K/W on FR4, and SOT23 pin compatibility with base-emitter-collector terminal assignment.

Technical Context

The BCV72,215 operates as a silicon NPN BJT optimized for linear amplification and saturated switching in non-automotive industrial and consumer electronics. Its h_FE variation (200–450) supports consistent biasing across production lots when used with emitter degeneration or feedback networks.

Thermal performance is defined for mounting on single-sided FR4 PCBs (R_th(j-a) = 500 K/W), and absolute maximum ratings include 80 V V_CBO, 5 V V_EBO, and 250 mW P_tot at T_amb ≤ 25 °C - confirming suitability for ambient-temperature-stable, low-power analog stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum safe collector-emitter voltage under open-base condition; defines upper rail limit in switching applications.
I_C	100 mA - Continuous collector current rating; sets max load drive capability in active or saturation mode.
h_FE	200–450 at I_C = 2 mA - Confirmed DC current gain range enables predictable base drive calculation for bias networks.
V_CE(sat)	210 mV max at I_C = 50 mA / I_B = 2.5 mA - Low saturation voltage minimizes power loss and heating in switching duty.
f_T	100 MHz - Transition frequency confirms usable bandwidth up to ~10 MHz for small-signal amplification.
R_th(j-a)	500 K/W - Thermal resistance on standard FR4 PCB; informs derating requirements above 25 °C ambient.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body, tin-plated leads, designed for reflow or wave soldering per IPC-7095 guidelines.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Current-controlled input node; requires series resistor to limit I_B and ensure operation within 200 mA peak rating.
2	Emitter (E)	Common reference terminal for NPN configuration; connects to ground or low-side return path in switching layouts.
3	Collector (C)	Output current sink node; routed to load or pull-up network; must remain ≤ 60 V relative to emitter.

Key Features

Feature	Design Value
Low-voltage switching	Rated for 60 V V_CEO and 5 V V_EBO, enabling use in 3.3 V and 5 V logic-level interface circuits without level-shifting.
Precision h_FE binning	Guaranteed 200–450 gain at 2 mA allows stable DC bias design without iterative trimming in production assemblies.
Low saturation loss	V_CE(sat) ≤ 210 mV at 50 mA ensures <10.5 mW conduction loss, reducing thermal stress in high-duty-cycle switches.
FR4-optimized thermal design	500 K/W R_th(j-a) validated on standard PCB enables accurate junction temperature estimation without heatsinking.

Applications

Logic-Level Signal Switching

Small-Signal Amplification

Use Scenario: Driving LED indicators, relay coils, or MOSFET gates from microcontroller GPIO pins operating at 3.3 V or 5 V.

IC Role / Device Role / Timing Role: NPN switch configured in common-emitter topology with base resistor control.

Use Value: V_CE(sat) ≤ 210 mV ensures minimal voltage drop and efficient power delivery to loads up to 100 mA.

Use Scenario: Amplifying weak sensor outputs (e.g., thermistor bridges or photodiode currents) before ADC sampling.

IC Role / Device Role / Timing Role: Linear-mode common-emitter amplifier with emitter degeneration for stable gain and bandwidth.

Use Value: f_T = 100 MHz and h_FE ≥ 200 support clean amplification of signals up to ~10 MHz with low distortion.

Discrete Level Translation

Current Mirror Reference

Use Scenario: Converting 1.8 V logic signals to 5 V-compatible levels in mixed-voltage digital subsystems.

IC Role / Device Role / Timing Role: Saturated NPN stage acting as open-collector output with external pull-up.

Use Value: Verified V_BE(sat) ≤ 850 mV at 50 mA ensures reliable turn-on with sub-2 V input drive, minimizing propagation delay.

Use Scenario: Building matched current sources in analog front-ends or bias generators for op-amp circuits.

IC Role / Device Role / Timing Role: One leg of a monolithic-matched pair (with identical BCV72,215 devices) for ratio-accurate current replication.

Use Value: Tight h_FE spread (200–450) and low ICBO (<100 nA) support stable mirroring accuracy over temperature and process variation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC846B,215	Higher h_FE (200–450 same range), but lower V_CEO (65 V vs. 60 V); identical SOT23 pinout and marking style.	Same switching/amplification use cases; marginally better voltage headroom but no gain advantage.	Select if 65 V rating is required; otherwise functionally interchangeable with BCV72,215 in 5 V systems.
MMBT3904LT1G	Higher I_C rating (200 mA), wider h_FE range (100–300), and lower V_CE(sat) (300 mV typ. at 10 mA), but different gain distribution.	Better suited for higher-current switching; less predictable at low I_C due to broader h_FE spread.	Prefer for loads >100 mA; avoid where precise 2 mA h_FE stability is critical.

Compared with BC846B,215 and MMBT3904LT1G, the BCV72,215 offers tighter h_FE consistency at 2 mA and lower V_CE(sat) at mid-currents, making it optimal for precision-biased, low-power analog and logic interface roles where gain predictability outweighs raw current capacity.

Availability

BCV72,215 is available at Aetrix Electronics and suitable for logic-level signal switching, small-signal amplification, discrete level translation, and current mirror reference applications requiring stable component supply and SOT23 footprint compatibility.

Supply support for BCV72,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic components, headquartered in Nijmegen, Netherlands.

The BCV72,215 belongs to Nexperia's general-purpose transistor product line, engineered for cost-effective, robust performance in non-automotive consumer, industrial, and computing applications where reliability and manufacturability are prioritized.

FAQ

Is BCV72,215 automotive-qualified?

No. Per Nexperia's 2023 revision history, BCV72,215 is explicitly designated as non-automotive qualified. It lacks AEC-Q101 qualification and is not tested to automotive temperature or reliability standards. For automotive use, consult Nexperia's BCV72-Q series alternatives.

What is the maximum allowable base current for continuous operation?

The absolute maximum peak base current is 200 mA (single pulse, t_p ≤ 1 ms), but continuous I_B must be limited to maintain I_C ≤ 100 mA and junction temperature below 150 °C. At I_C = 100 mA and h_FE = 200, I_B ≈ 0.5 mA - typical design practice uses 2–5× that for saturation, so ≤ 2.5 mA is recommended for sustained operation.

Can BCV72,215 replace BC847 in existing designs?

Yes, with verification. Both are SOT23 NPN transistors with overlapping V_CEO (60 V vs. 50 V) and h_FE ranges, but BCV72,215 has higher V_CEO and lower V_CE(sat). Confirm layout compatibility (identical pinout), check base drive strength, and validate thermal performance under worst-case I_C conditions before substitution.

What is the typical noise figure and its relevance in amplifier designs?

The BCV72,215 exhibits a noise figure of 10 dB at V_CE = 5 V, I_C = 200 µA, R_S = 2 kΩ, and 1 MHz bandwidth. This value indicates moderate noise performance - suitable for pre-amplification of medium-impedance sensors but not optimal for ultra-low-noise front-ends like microphone or RF receiver stages.

BCV72,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 210mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 5V

Power - Max:: 250 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BCV72,215 FAQ

1.How can I place an order for BCV72,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCV72,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCV72,215 reliable?

The price and inventory of BCV72,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCV72,215 is usually 5 days.

3.What payment methods are accepted for BCV72,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCV72,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCV72,215?

BCV72,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCV72,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCV72,215?

For technical support, including BCV72,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCV72,215 requirements.

6.How does Aetrix verify that BCV72,215 is sourced from the original manufacturer or authorized distributors?

All BCV72,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCV72,215 meets industry standards.

7.What is the process for return or replacement of BCV72,215?

All BCV72,215 units undergo pre-shipment inspection (PSI). If there is an issue with BCV72,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCV72,215 part is unused and in its original packaging.

Return procedure for BCV72,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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