Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BCW31,215

Part No.:
BCW31,215
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBCW31,215.pdf
Description:
TRANS NPN 32V 0.1A TO-236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:91,119

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BCW31,215 from Nexperia is an NPN general-purpose bipolar junction transistor (BJT) in SOT23 package, rated for 32 V VCEO, 100 mA IC, and 250 mW Ptot, with DC current gain (hFE) of 110–220 at IC = 2 mA. It serves as a low-voltage switching or small-signal amplification device in discrete logic interfaces and sensor signal conditioning circuits.

For engineers reviewing the BCW31,215 datasheet, BCW31,215 pinout, BCW31,215 application, or BCW31,215 equivalent, this part supports design validation for low-power analog front-ends, level-shifting stages, and discrete load control where thermal budget and footprint are constrained by SOT23 packaging.

Technical Context

The BCW31,215 operates as a silicon NPN BJT with base-emitter forward voltage of 550–700 mV at IC = 2 mA and VCE = 5 V. Its transition frequency fT is 100 MHz, and collector capacitance Cc is 2.5 pF at VCB = 10 V, enabling use in audio-frequency amplification and moderate-speed digital switching.

Thermal resistance Rth(j-a) is 500 K/W on FR4 PCB, limiting continuous operation to ≤100 mA at ambient temperatures up to +85 °C without heatsinking. Collector-emitter saturation voltage VCE(sat) is 120–250 mV at IC = 10 mA / IB = 0.5 mA, confirming suitability for low-loss switching in battery-powered systems.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO32 V - maximum safe collector-emitter voltage under open-base condition; defines upper rail limit in low-voltage switch designs
IC (DC)100 mA - continuous collector current rating; sets max load drive capability without derating
hFE110–220 - DC current gain at IC = 2 mA; determines required base drive for predictable saturation
VCE(sat)120–250 mV - voltage drop across collector-emitter in saturated switch mode; impacts power loss and heating
fT100 MHz - transition frequency; confirms usable bandwidth for audio and sub-MHz signal amplification
Rth(j-a)500 K/W - junction-to-ambient thermal resistance on FR4; dictates PCB copper area needed for thermal management
Cc2.5 pF - collector capacitance at 10 V; limits high-frequency gain roll-off and switching speed

Pinout & Package

BCW31,215 is housed in a plastic surface-mount SOT23 (TO-236AB) package measuring 2.9 × 1.3 × 1.0 mm, with gull-wing leads and standard JEDEC outline. Thermal performance assumes mounting on FR4 PCB per datasheet test conditions.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl terminal; requires current-limited drive (IB ≤ 200 mA peak) to bias transistor into active or saturation region
2EmitterCurrent return path; connected to ground or low-side reference; polarity defines NPN topology
3CollectorOutput terminal; carries load current; must remain ≤32 V below emitter potential in reverse-biased state

Key Features

FeatureDesign Value
Low-voltage operationRated for 32 V VCEO - enables use in 3.3 V, 5 V, and 12 V logic-compatible circuits without overvoltage risk
SOT23 footprint compatibilityStandardized 3-pin gull-wing layout - allows direct replacement in space-constrained PCBs using automated assembly
Controlled hFE spread110–220 at IC = 2 mA - supports predictable base resistor selection for consistent turn-on behavior across production lots
Low VCE(sat)≤250 mV at IC = 10 mA - minimizes conduction loss in battery-switching and LED driver applications

Applications

LED Driver StageMicrocontroller GPIO Expander

Use Scenario: Driving 20 mA indicator LEDs from 3.3 V MCU outputs.

IC Role / Device Role / Timing Role: Discrete NPN switch amplifying weak GPIO current to sink LED load.

Use Value: VCE(sat) ≤ 250 mV ensures >3.05 V forward voltage margin across LED, preserving brightness and efficiency.

Use Scenario: Level-shifting 1.8 V sensor signals to 3.3 V microcontroller inputs.

IC Role / Device Role / Timing Role: Emitter-follower buffer providing impedance isolation and voltage translation.

Use Value: hFE ≥ 110 guarantees stable biasing with minimal base current draw from low-power sensors.

Audio Pre-amplifier InputPower Supply Enable Switch

Use Scenario: Amplifying microphone output (10 mVpp) before ADC sampling in portable audio devices.

IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with fixed bias network.

Use Value: fT = 100 MHz and Cc = 2.5 pF support flat gain response up to 20 kHz with <1 dB deviation.

Use Scenario: Enabling/disabling 5 V auxiliary rail via MCU-controlled ON/OFF signal.

IC Role / Device Role / Timing Role: Low-side switch controlling PMOS gate or LDO enable pin.

Use Value: IC = 100 mA rating and Rth(j-a) = 500 K/W allow reliable 100% duty-cycle operation at +70 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BC846B,215Higher hFE (200–450), same SOT23 package, identical VCEO/IC ratingsBetter suited for low-base-drive applications; slightly higher fT (250 MHz)Select when tighter hFE tolerance or higher bandwidth is required without changing layout
MMBT3904LT1GSame VCEO (40 V), higher IC (200 mA), hFE 100–300, SOT23-3 packageSupports higher load currents; wider hFE spread increases base resistor sensitivityChoose for increased current headroom or where 40 V margin is critical in 24 V systems

Compared with BCW31,215, BC846B,215 offers higher gain and bandwidth for signal amplification, while MMBT3904LT1G provides greater current capacity and voltage margin-both retain SOT23 compatibility but require verification of hFE-dependent bias networks.

Availability

BCW31,215 is available at Aetrix Electronics and suitable for LED driver stages, microcontroller GPIO expansion, audio pre-amplifier inputs, and power supply enable switches requiring stable component supply and long-term industrial availability.

Supply support for BCW31,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.

The BCW31,215 belongs to Nexperia's general-purpose transistor product line, engineered for cost-sensitive, high-volume applications demanding reliability, consistent parametric performance, and SMT manufacturability.

FAQ

Is BCW31,215 RoHS compliant and halogen-free?

Yes. BCW31,215 meets RoHS Directive 2011/65/EU and is halogen-free per Nexperia standard specifications. The SOT23 package uses lead-free solderable terminations and complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1).

What is the maximum operating temperature for continuous DC operation?

The BCW31,215 has a maximum junction temperature of 150 °C and specified operating ambient temperature range of −65 °C to +150 °C. At 25 °C ambient, full 100 mA IC is allowed; above 25 °C, linear derating applies at 1.0 mA/°C based on Ptot = 250 mW and Rth(j-a) = 500 K/W.

Can BCW31,215 be used in linear amplifier configurations?

Yes, but with constraints. Its fT = 100 MHz and low noise figure (<10 dB at 1 kHz) support audio-frequency linear amplification. However, thermal limitations (Ptot = 250 mW) restrict quiescent collector current to ≤25 mA at 25 °C ambient for stable Class-A operation without heatsinking.

Does BCW31,215 have a documented PNP complement?

Yes. Nexperia specifies BCW29 and BCW30 as direct PNP complements to BCW31–BCW33. BCW29 shares identical SOT23 packaging, 32 V VECO, 100 mA IC, and complementary hFE range (110–220), enabling matched pair use in push-pull or differential amplifier topologies.

BCW31,215 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
32 V
Vce Saturation (Max) @ Ib, Ic:
210mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
110 @ 2mA, 5V
Power - Max:
250 mW
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

BCW31,215 FAQ

1.How can I place an order for BCW31,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCW31,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCW31,215 reliable?

The price and inventory of BCW31,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCW31,215 is usually 5 days.

3.What payment methods are accepted for BCW31,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCW31,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCW31,215?

BCW31,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCW31,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCW31,215?

For technical support, including BCW31,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCW31,215 requirements.

6.How does Aetrix verify that BCW31,215 is sourced from the original manufacturer or authorized distributors?

All BCW31,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCW31,215 meets industry standards.

7.What is the process for return or replacement of BCW31,215?

All BCW31,215 units undergo pre-shipment inspection (PSI). If there is an issue with BCW31,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCW31,215 part is unused and in its original packaging.

Return procedure for BCW31,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BCW31,215 Tags

  • BCW31,215
  • BCW31,215 PDF
  • BCW31,215 Datasheet
  • BCW31,215 Specifications
  • BCW31,215 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BCW31,215
  • Buy BCW31,215
  • BCW31,215 Price
  • BCW31,215 Distributor
  • BCW31,215 Supplier
  • BCW31,215 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER