onsemi BCW60B
- Part No.:
- BCW60B
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BCW60B.pdf
- Description:
- TRANS NPN 32V 0.1A SOT-23-3
- Quantity:
- Payment:

- Shipping:

Inventory:3,642
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Product details
Overview
BCW60B from Fairchild Semiconductor is an NPN epitaxial silicon general-purpose transistor in SOT-23 package, rated for 32 V VCEO, 100 mA IC, and 350 mW PC, commonly used in low-power switching and amplification stages of portable audio, sensor interface, and signal conditioning circuits.
For engineers reviewing the BCW60B datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain (hFE = 70–220 at IC = 10 µA–50 mA), fT = 125 MHz, VCE(sat) ≤ 0.55 V at IC = 50 mA, noise figure = 6 dB, and SOT-23 thermal and layout compatibility.
Technical Context
The BCW60B operates as a medium-speed, low-noise NPN bipolar junction transistor optimized for linear amplification and digital switching in battery-powered systems. Its hFE binning (70–220) ensures predictable gain across bias points, while fT = 125 MHz supports audio-frequency and low-MHz signal handling.
Designed with epitaxial base construction, it delivers stable VBE(on) = 0.55–0.75 V and low Cob = 4.5 pF, enabling clean turn-on/turn-off transitions (tON = 150 ns, tOFF = 800 ns) with minimal Miller effect in common-emitter configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 32 V - Maximum safe collector-emitter voltage before breakdown under open-base conditions |
| IC | 100 mA - Continuous collector current limit defining usable output drive capability |
| hFE | 70–220 - DC current gain range across test conditions (IC = 10 µA to 50 mA), critical for bias stability |
| fT | 125 MHz - Unity-gain bandwidth indicating small-signal amplification limit at 5 V VCE |
| VCE(sat) | 0.55 V max at IC = 50 mA, IB = 1.25 mA - Low saturation voltage enabling efficient switching with minimal power loss |
| Noise Figure | 6 dB at IC = 0.2 mA, 1 kHz - Quantified low-noise performance suitable for preamplifier stages |
| Cob | 4.5 pF at VCB = 10 V - Output capacitance affecting high-frequency response and stability in RF-adjacent designs |
Pinout & Package
SOT-23 plastic surface-mount package with gull-wing leads; compact 2.9 mm × 1.3 mm footprint and 1.0 mm height, optimized for automated assembly and thermal dissipation in space-constrained PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal accepting forward-biased current to enable conduction between collector and emitter |
| 2 | Emitter | Current return path; tied to ground or low-impedance reference in common-emitter configuration |
| 3 | Collector | Output current sink; connects to load or next stage with voltage headroom up to 32 V |
Key Features
| Feature | Design Value |
|---|---|
| Epitaxial base structure | Enables tight hFE distribution and consistent VBE across production lots |
| Low noise figure (6 dB) | Supports high-fidelity analog signal amplification without significant SNR degradation |
| 125 MHz fT | Permits stable small-signal gain up to mid-audio frequencies and basic RF front-end use |
| SOT-23 package | Enables high-density routing and reflow-compatible manufacturing in consumer electronics PCBs |
| Low VCE(sat) (0.55 V) | Reduces conduction loss in switching applications, improving efficiency in 3.3 V/5 V logic-level interfaces |
Applications
| Portable Audio Preamp | Sensor Signal Conditioning |
|---|---|
Use Scenario: Amplifying weak microphone or piezoelectric sensor outputs in battery-powered voice recorders. IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter topology with fixed bias network. Use Value: 6 dB noise figure and 70–220 hFE ensure clean gain without introducing audible hiss or distortion. | Use Scenario: Converting low-level thermistor or photodiode currents into stable voltage signals for ADC input. IC Role / Device Role / Timing Role: Transimpedance or emitter-follower buffer stage providing impedance transformation and DC coupling. Use Value: Low VBE(on) (0.55–0.75 V) and tight VCE(sat) allow operation from 3.3 V rails with minimal headroom loss. |
| Logic-Level Switching | LED Driver Interface |
Use Scenario: Driving relays, buzzers, or small solenoids from microcontroller GPIO pins. IC Role / Device Role / Timing Role: Digital switch operating in saturation/cutoff modes controlled by TTL/CMOS logic levels. Use Value: Fast tON/tOFF (150 ns / 800 ns) and low VCE(sat) minimize switching losses and heat generation. | Use Scenario: Current-limiting driver for indicator LEDs in handheld medical or industrial devices. IC Role / Device Role / Timing Role: Constant-current source configured with emitter resistor and base drive. Use Value: Predictable hFE binning enables accurate LED current setting across temperature and unit variance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC846B | Higher hFE (110–220), same SOT-23, VCEO = 65 V, fT = 100 MHz | Better gain consistency at IC > 10 mA; higher voltage margin but lower bandwidth | Preferred when higher VCEO headroom or tighter hFE spread is required |
| MMBT3904 | Same VCEO/IC, hFE = 100–300, fT = 300 MHz, Cob = 4 pF | Higher speed and broader gain range; widely available with extended lifecycle support | Recommended for new designs needing higher fT or longer-term supply assurance |
Compared with BCW60B, BC846B offers greater voltage safety margin but reduced bandwidth, while MMBT3904 provides superior speed and wider gain range-both require validation of bias network stability due to differing hFE curves and VBE characteristics.
Availability
BCW60B is available at Aetrix Electronics and suitable for portable audio preamps, sensor signal conditioning, logic-level switching, and LED driver interfaces requiring stable component supply and long-lifecycle support.
Supply support for BCW60B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.
The BCW60B belongs to Fairchild's legacy general-purpose bipolar transistor family, designed for cost-sensitive, low-power linear and switching applications in consumer and industrial electronics.
FAQ
What is the maximum collector-emitter voltage rating for BCW60B?
The BCW60B has a maximum collector-emitter voltage (VCEO) rating of 32 V at TA = 25°C. This value represents the upper limit of voltage that can be applied between collector and emitter with the base open before breakdown occurs. Exceeding this rating risks permanent device failure. The BCW60B must be operated within this limit in all circuit configurations, including transient conditions.
What is the DC current gain (hFE) range specified for BCW60B?
The BCW60B exhibits a DC current gain (hFE) ranging from 70 to 220, depending on test conditions: minimum 70 at IC = 10 µA, 120 at IC = 2 mA, and 220 at IC = 50 mA (all at VCE = 5 V or 1 V). This binned gain range reflects Fairchild's production sorting and must be accounted for in bias design to ensure consistent operation across units.
Is BCW60B suitable for high-frequency amplification applications?
The BCW60B has a current gain bandwidth product (fT) of 125 MHz at IC = 10 mA and VCE = 5 V, making it suitable for audio-frequency amplification and low-MHz signal conditioning-but not for RF power or GHz-range applications. Its 4.5 pF output capacitance and 800 ns turn-off time further constrain use to sub-50 MHz small-signal stages where stability and noise performance are prioritized over raw speed.
What package type does BCW60B use, and what are its key mechanical features?
The BCW60B uses the SOT-23 surface-mount package, measuring 2.9 mm × 1.3 mm × 1.0 mm with gull-wing leads. It features a standardized 3-pin configuration (Base–Emitter–Collector) and is compatible with standard reflow soldering profiles. The compact size supports high-density PCB layouts, while the plastic body provides adequate thermal dissipation for its 350 mW power rating in still-air conditions.
How does BCW60B compare to BCW60C in terms of DC current gain?
The BCW60B is binned for hFE = 70–220, whereas BCW60C is binned for hFE = 100–310 at identical test conditions. This means BCW60C guarantees higher minimum gain across all operating points, particularly at IC = 2 mA and IC = 50 mA. Designers selecting BCW60B should verify bias networks function correctly across its lower gain range, especially in temperature-varying environments.
BCW60B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 32 V
- Vce Saturation (Max) @ Ib, Ic:
- 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max):
- 20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 180 @ 2mA, 5V
- Power - Max:
- 350 mW
- Frequency - Transition:
- 125MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
BCW60B FAQ
1.How can I place an order for BCW60B through Aetrix?
Please submit a Request for Quotation (RFQ) for BCW60B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCW60B reliable?
The price and inventory of BCW60B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCW60B is usually 5 days.
3.What payment methods are accepted for BCW60B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCW60B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCW60B?
BCW60B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCW60B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCW60B?
For technical support, including BCW60B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCW60B requirements.
6.How does Aetrix verify that BCW60B is sourced from the original manufacturer or authorized distributors?
All BCW60B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCW60B meets industry standards.
7.What is the process for return or replacement of BCW60B?
All BCW60B units undergo pre-shipment inspection (PSI). If there is an issue with BCW60B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCW60B part is unused and in its original packaging.
Return procedure for BCW60B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCW60B Tags

-
MMBT3906LT1G
onsemi

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MMBT3904-7-F
Diodes Incorporated

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MMBT3904LT1G
onsemi

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MMBT3906-7-F
Diodes Incorporated

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MMBT3904-TP
Micro Commercial Co

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MMBT2222A-7-F
Diodes Incorporated

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BC846BLT1G
onsemi

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BC847B,215
Nexperia USA Inc.

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SMMBT3904LT1G
onsemi

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MMBT2222A-TP
Micro Commercial Co

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MMBTA06LT1G
onsemi

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MMBT2222ALT1G
onsemi
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