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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BCW60B,215

Name: BCW60B,215
Brand: Nexperia USA Inc.
SKU: BCW60B,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCW60B,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BCW60B,215.pdf

Description:: TRANS NPN 32V 0.1A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BCW60B,215 from NXP Semiconductors is an NPN general-purpose bipolar junction transistor in SOT23 package, rated for 32 V V_CEO, 100 mA I_C, and DC current gain (h_FE) of 180–310 at I_C = 2 mA / V_CE = 5 V, used in low-power signal switching and amplification circuits in consumer electronics and industrial control modules.

For engineers reviewing the BCW60B,215 datasheet, BCW60B,215 pinout, BCW60B,215 application, or BCW60B,215 equivalent, key selection criteria include verified h_FE binning (B-grade), SOT23 thermal resistance (500 K/W), V_CEsat ≤ 350 mV at 10 mA/0.25 mA drive, and compatibility with BCW61B PNP complement in push-pull configurations.

Technical Context

This discrete NPN transistor operates in linear and saturation regions with defined cutoff (ICBO ≤ 20 nA) and noise figure (2–6 dB at 1 kHz). Its f_T of 100–250 MHz supports RF pre-amplifier use up to low-VHF, while C_c = 1.7 pF and C_e = 11 pF define high-frequency impedance behavior.

Thermal design relies on FR4 PCB mounting (R_{th j-a} = 500 K/W); junction temperature must remain ≤150 °C under continuous 250 mW dissipation. Base-emitter forward voltage is specified at 550–750 mV (I_C = 2 mA), enabling predictable bias network design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	32 V - Maximum collector-emitter voltage before breakdown; sets safe operating range in 24 V logic-level switching.
I_C (DC)	100 mA - Continuous collector current limit; defines max load drive capability in relay drivers or LED buffers.
h_FE (I_C = 2 mA)	180–310 - Confirmed DC current gain bin for BCW60B; enables stable 10–20× current amplification in sensor interface stages.
V_CEsat (10 mA/0.25 mA)	50–350 mV - Verified saturation voltage; ensures <0.35 V drop across collector-emitter in ON-state, minimizing power loss.
f_T	100–250 MHz - Transition frequency; supports small-signal amplification up to ~100 MHz with usable gain margin.
R_{th j-a}	500 K/W - Thermal resistance on FR4 board; requires derating above 25 °C ambient to maintain T_j ≤ 150 °C.

Pinout & Package

SOT23 plastic surface-mount package (TO-236AB), 3-lead, 1.3 mm × 2.9 mm footprint, 1.1 mm height; optimized for automated placement and reflow soldering on standard PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input node; requires 0.25 mA base drive for 10 mA collector saturation per datasheet test condition.
2	Emiter	Reference terminal for bias networks; connected to ground or common emitter node in common-emitter amplifier configuration.
3	Collector	Output current path; handles up to 100 mA DC load current with ≤350 mV saturation drop at rated drive.

Key Features

Feature	Design Value
Low-voltage operation	Rated for ≤32 V systems - suitable for automotive body electronics and 24 V industrial I/O without derating.
Controlled h_FE binning	B-grade (180–310) - ensures predictable gain matching in differential pairs or multi-stage amplifiers.
Low-noise performance	F = 2–6 dB at 1 kHz - enables use in audio preamp and sensor signal conditioning where SNR matters.
Small-outline packaging	SOT23 footprint - saves board space vs. TO-92; compatible with high-density layouts in portable devices.

Applications

Audio Signal Amplification

Low-Voltage Switching

Use Scenario: Amplifying microphone or line-level signals in battery-powered audio interfaces.

IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with fixed bias.

Use Value: 180–310 h_FE provides stable 20× voltage gain; low V_CEsat preserves headroom in 3.3 V/5 V rails.

Use Scenario: Driving LEDs, relays, or MOSFET gates in PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side switch with base-driven saturation.

Use Value: 350 mV V_CEsat limits conduction loss to <3.5 mW at 10 mA, improving efficiency in thermally constrained enclosures.

Sensor Interface Buffer

Complementary Pair Driver

Use Scenario: Isolating and amplifying output from analog temperature or light sensors.

IC Role / Device Role / Timing Role: Emitter-follower buffer stage for impedance transformation.

Use Value: 11 pF emitter capacitance minimizes phase shift below 1 MHz; 20 nA ICBO prevents leakage-induced offset drift.

Use Scenario: Constructing Class B push-pull output stages in low-power op-amp drivers.

IC Role / Device Role / Timing Role: NPN half of complementary pair with BCW61B PNP.

Use Value: Matched V_BE (550–750 mV) and h_FE binning reduce crossover distortion in analog output stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC846B,215	Same SOT23 package; h_FE = 200–450 (wider bin), V_CEO = 65 V, P_tot = 250 mW	Higher voltage rating enables use in 48 V telecom systems; wider h_FE bin increases gain variation risk in precision biasing.	Select when higher V_CEO or tighter production yield is required; verify layout compatibility with identical footprint.
MMBT3904LT1G	SOT23; h_FE = 100–300 (B-grade), V_CEO = 40 V, R_{th j-a} = 400 K/W	Better thermal performance (400 vs. 500 K/W) allows higher ambient operation; lower f_T (300 MHz typical) reduces RF susceptibility.	Prefer for thermally demanding environments; confirm pinout match (1=base, 2=emitter, 3=collector) before substitution.

Compared with BCW60B,215, BC846B,215 offers higher voltage margin but looser h_FE tolerance, while MMBT3904LT1G improves thermal dissipation but trades off some high-frequency gain stability.

Availability

BCW60B,215 is available at Aetrix Electronics and suitable for audio signal amplification, low-voltage switching, sensor interface buffering, and complementary pair driver applications requiring stable component supply and long-term obsolescence management.

Supply support for BCW60B,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The BCW60 series belongs to NXP's legacy general-purpose discrete transistor product line, designed specifically for cost-sensitive, low-power linear and switching functions in consumer and industrial electronics.

FAQ

What is the maximum allowable junction temperature for BCW60B,215?

The absolute maximum junction temperature (T_j) is 150 °C, as defined in the Limiting Values table. Operation beyond this threshold risks permanent degradation of h_FE and increased leakage. Derating is required above 25 °C ambient using R_{th j-a} = 500 K/W to ensure T_j remains within specification under full 250 mW dissipation.

Is BCW60B,215 pin-compatible with BCW60C or BCW60D?

Yes - all BCW60 variants share identical SOT23 pinout (1=base, 2=emitter, 3=collector) and mechanical dimensions. The only difference is h_FE binning: BCW60B (180–310), BCW60C (250–460), BCW60D (380–630). Substitution is electrically safe if gain requirements permit the lower or higher range.

Does BCW60B,215 have a qualified automotive grade variant?

No - BCW60B,215 is not AEC-Q101 qualified. It is rated for industrial ambient temperature (−65 °C to +150 °C), but lacks automotive-specific reliability testing, qualification documentation, or PPAP support. For automotive applications, consider NXP's BC846B-Q or BC847B-Q series instead.

Can BCW60B,215 be used in RF amplifier stages?

Yes - with limitations. Its f_T of 100–250 MHz supports small-signal amplification up to ~100 MHz, and C_c = 1.7 pF / C_e = 11 pF enable stable matching networks. However, it lacks specified S-parameters or noise figure above 10 MHz, so use is restricted to non-critical, low-gain RF preamps (e.g., IF stages in AM receivers).

BCW60B,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 32 V

Vce Saturation (Max) @ Ib, Ic:: 550mV @ 1.25mA, 50mA

Current - Collector Cutoff (Max):: 20nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 180 @ 2mA, 5V

Power - Max:: 250 mW

Frequency - Transition:: 250MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BCW60B,215 FAQ

1.How can I place an order for BCW60B,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCW60B,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCW60B,215 reliable?

The price and inventory of BCW60B,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCW60B,215 is usually 5 days.

3.What payment methods are accepted for BCW60B,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCW60B,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCW60B,215?

BCW60B,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCW60B,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCW60B,215?

For technical support, including BCW60B,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCW60B,215 requirements.

6.How does Aetrix verify that BCW60B,215 is sourced from the original manufacturer or authorized distributors?

All BCW60B,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCW60B,215 meets industry standards.

7.What is the process for return or replacement of BCW60B,215?

All BCW60B,215 units undergo pre-shipment inspection (PSI). If there is an issue with BCW60B,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCW60B,215 part is unused and in its original packaging.

Return procedure for BCW60B,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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