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Infineon Technologies BCW60BE6327HTSA1

Part No.:
BCW60BE6327HTSA1
Manufacturer:
Infineon Technologies
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBCW60BE6327HTSA1.pdf
Description:
TRANS NPN 32V 0.1A PG-SOT23
Quantity:
Payment:
Payment
Shipping:
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Inventory:4,471

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Product details

Overview

BCW60BE6327HTSA1 from Infineon Technologies is an NPN silicon bipolar junction transistor designed for audio-frequency input stages and driver circuits. It delivers high DC current gain (hFE = 250–500 at IC = 2 mA), low VCE(sat) (0.12–0.25 V), and low noise (F = 2 dB at 1 kHz), making it suitable for low-distortion preamplifier and line-driver applications in automotive and industrial signal conditioning.

For engineers reviewing the BCW60BE6327HTSA1 datasheet, BCW60BE6327HTSA1 pinout, BCW60BE6327HTSA1 application, or BCW60BE6327HTSA1 equivalent, key selection criteria include its SOT-23 package footprint, AEC-Q101 qualification, guaranteed hFE group B/E/H/K grading, VCEO = 32 V rating, and verified noise performance below 15 kHz.

Technical Context

This transistor operates as a linear amplifying device with fixed-emitter biasing capability, optimized for small-signal AF amplification up to 250 MHz fT. Its h-parameter set (h21e = 200–520, h11e = 2.7–7.5 kΩ) supports stable common-emitter configuration design across temperature ranges from –50 °C to +150 °C.

The device features complementary PNP counterparts (BCW61/BCX71), enabling push-pull stage implementation. Its low Ccb (0.95 pF) and Ceb (9 pF) minimize Miller effect in high-gain stages, while RoHS-compliant SOT-23 packaging ensures compatibility with lead-free reflow processes.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO32 V - Maximum collector-emitter voltage before breakdown; defines safe operating range in low-voltage amplifier rails.
hFE (IC = 2 mA)250–500 - Confirmed DC current gain range for BCW60B grade; enables predictable bias point stability in discrete gain stages.
VCE(sat)0.12–0.25 V - Low saturation voltage at IC = 10 mA/IB = 0.25 mA; reduces power loss in switching or Class-A driver operation.
fT250 MHz - Transition frequency at IC = 20 mA/VCE = 5 V; supports wideband AF and low-MHz signal amplification without roll-off.
F (Noise Figure)2 dB - Measured at IC = 200 µA/VCE = 5 V/f = 1 kHz/Δf = 200 Hz/RS = 2 kΩ; ensures minimal added noise in sensitive preamp inputs.
Ptot330 mW - Total power dissipation at TS ≤ 71 °C; sets thermal derating limit for continuous operation on standard PCBs.

Pinout & Package

BCW60BE6327HTSA1 is housed in a RoHS-compliant SOT-23 plastic surface-mount package with gull-wing leads. The package dimensions are 2.9 mm × 1.3 mm × 1.0 mm (L × W × H), compatible with IPC-7351B SOIC-3 land patterns.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Emitter terminalReference node for base-emitter junction; connects to ground or signal return in common-emitter topology.
2 (Base)Control inputCurrent-controlled gate for amplification; requires series resistor for stable biasing against hFE variation.
3 (Collector)Output terminalHigh-impedance current sink; interfaces with load resistor or next-stage input impedance.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive electronics per stress test requirements including HTOL, TC, and ESD; supports under-hood deployment.
Low-noise operationF = 2 dB at 1 kHz with 200 µA bias - enables high-SNR front-end amplification without active feedback compensation.
Graded hFE groupsB/E/H/K binning ensures consistent gain matching across production lots for differential pair or cascade stage design.
Thermal robustnessTj = 150 °C max and RthJS ≤ 240 K/W - allows reliable operation in thermally constrained enclosures without forced cooling.

Applications

Audio Pre-amplifier StageAutomotive Sensor Interface

Use Scenario: Amplifying weak microphone or piezoelectric sensor signals in battery-powered voice recorders or intercom systems.

IC Role / Device Role / Timing Role: Small-signal NPN amplifier in common-emitter configuration with emitter degeneration for linearity.

Use Value: 2 dB noise figure and 250–500 hFE enable >60 dB SNR at 10 mV input without op-amp complexity.

Use Scenario: Conditioning analog outputs from pressure, temperature, or position sensors in engine control modules.

IC Role / Device Role / Timing Role: Signal buffer and level-shifter between sensor output and ADC input of automotive MCU.

Use Value: AEC-Q101 qualification and –50 °C to +150 °C operation ensure functional reliability across full vehicle thermal envelope.

Line Driver CircuitDiscrete Logic Level Shifter

Use Scenario: Driving 600 Ω balanced audio lines over short distances in professional audio equipment.

IC Role / Device Role / Timing Role: Class-A emitter-follower output stage delivering low-impedance drive capability.

Use Value: VCE(sat) ≤ 0.25 V and 330 mW Ptot support 10 mA continuous output with <1% THD at 1 kHz.

Use Scenario: Translating 3.3 V logic levels from microcontrollers to 5 V legacy peripherals in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Active-high NPN switch with base resistor network for unidirectional level translation.

Use Value: Fast fT = 250 MHz and low Ccb = 0.95 pF allow clean edge transitions up to 10 MHz clock rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BC846B,215 (Nexperia)VCEO = 65 V, hFE = 200–450, fT = 100 MHz, no AEC-Q101 certificationHigher voltage headroom but lower bandwidth and no automotive qualificationSelect when higher VCEO is required and automotive compliance is not mandatory
MMBT3904LT1G (ON Semiconductor)VCEO = 40 V, hFE = 100–300, F = 5 dB, AEC-Q101 qualifiedLower noise performance and narrower hFE range than BCW60BSelect when cost sensitivity outweighs need for ultra-low noise or tight gain matching

Compared with BC846B and MMBT3904LT1G, BCW60BE6327HTSA1 offers superior noise performance (2 dB vs. ≥5 dB), tighter hFE binning (B/E/H/K), and identical AEC-Q101 validation-making it optimal for precision AF amplification where signal integrity and automotive compliance are jointly critical.

Availability

BCW60BE6327HTSA1 is available at Aetrix Electronics and suitable for automotive sensor interfaces, audio pre-amplifier stages, and discrete line driver circuits requiring stable component supply and long-term lifecycle assurance.

Supply support for BCW60BE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certifications.

This transistor belongs to Infineon's BCW/BCX family of general-purpose RF and AF bipolar transistors, engineered for high-reliability analog signal conditioning in harsh environments including automotive under-hood applications.

FAQ

Is BCW60BE6327HTSA1 pin-compatible with BC847 or MMBT3904?

Yes, BCW60BE6327HTSA1 uses the standard SOT-23 package with emitter-base-collector pinout (1-E, 2-B, 3-C), matching BC847 and MMBT3904. However, electrical parameters-including hFE range, noise figure, and AEC-Q101 status-differ significantly, so functional substitution requires circuit-level validation.

What is the maximum continuous collector current for BCW60BE6327HTSA1?

The absolute maximum continuous collector current is 100 mA at TA = 25 °C. Derating applies above 71 °C case temperature; at 100 °C, maximum IC drops to approximately 65 mA based on the Ptot = 330 mW thermal limit and VCE(sat) behavior.

Does BCW60BE6327HTSA1 support pulsed operation beyond its DC ratings?

Yes, the device supports pulsed collector currents up to 200 mA with duty cycle ≤ 2% and pulse width < 300 µs. This capability is validated in the permissible pulse load curve (EHP00328), enabling use in intermittent signal gating or burst-mode driver applications.

How does the BCW60B hFE grade differ from BCW60C or BCW60D?

BCW60B specifies hFE = 200–380 at IC = 10 µA, while BCW60C and BCW60D offer progressively higher minimum gains (400–500 and 500–630 respectively). These grades enable precise gain matching in multi-stage amplifiers or differential pairs where consistent current transfer ratio is essential.

BCW60BE6327HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
32 V
Vce Saturation (Max) @ Ib, Ic:
550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max):
20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 2mA, 5V
Power - Max:
330 mW
Frequency - Transition:
250MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23

BCW60BE6327HTSA1 FAQ

1.How can I place an order for BCW60BE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCW60BE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCW60BE6327HTSA1 reliable?

The price and inventory of BCW60BE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCW60BE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BCW60BE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCW60BE6327HTSA1 transactions.

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4.How is shipping managed for BCW60BE6327HTSA1?

BCW60BE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCW60BE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCW60BE6327HTSA1?

For technical support, including BCW60BE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCW60BE6327HTSA1 requirements.

6.How does Aetrix verify that BCW60BE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BCW60BE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCW60BE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BCW60BE6327HTSA1?

All BCW60BE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCW60BE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCW60BE6327HTSA1 part is unused and in its original packaging.

Return procedure for BCW60BE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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