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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BCW60C,215

Name: BCW60C,215
Brand: Nexperia USA Inc.
SKU: BCW60C,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCW60C,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BCW60C,215.pdf

Description:: TRANS NPN 32V 0.1A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BCW60C,215 from NXP Semiconductors is an NPN general-purpose bipolar junction transistor in SOT23 package, rated for 32 V V_CEO, 100 mA I_C, and DC current gain (h_FE) of 250–460 at I_C = 2 mA, used in low-power signal switching and amplification circuits in consumer electronics and industrial control interfaces.

For engineers reviewing the BCW60C,215 datasheet, BCW60C,215 pinout, BCW60C,215 application, or BCW60C,215 equivalent, key selection factors include its verified SOT23 footprint compatibility, guaranteed h_FE range at low collector currents, saturation voltage under defined drive conditions, thermal resistance on FR4, and complementary PNP pairing with BCW61C.

Technical Context

The BCW60C operates as a silicon NPN BJT optimized for linear amplification and digital switching below 100 mA, with base-emitter and collector-base junctions rated to 5 V and 32 V respectively. Its f_T of 100–250 MHz supports RF-coupled audio and low-speed digital signal conditioning.

Thermal performance is defined for FR4 mounting (R_{th j-a} = 500 K/W), and noise figure is specified at 2–6 dB under 200 μA I_C, making it suitable for low-noise preamplifier stages where gain stability and minimal added noise are required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	32 V - maximum safe collector-emitter voltage before breakdown in common-emitter configuration
I_C (DC)	100 mA - continuous collector current limit defining usable analog/digital load drive capability
h_FE @ 2 mA	250–460 - guaranteed DC current gain range enabling predictable biasing in amplifier designs
V_CE(sat) @ 10 mA	50–350 mV - low saturation voltage ensuring minimal power loss and voltage headroom in switch applications
f_T	100–250 MHz - transition frequency confirming suitability for audio and sub-300 MHz signal paths
R_{th j-a}	500 K/W - thermal resistance indicating need for layout-aware copper pour or derating above 25 °C ambient
C_c	1.7 pF - collector capacitance affecting high-frequency response and Miller effect in amplifier stages

Pinout & Package

SOT23 plastic surface-mount package (TO-236AB), 3-lead, dimensions per JEDEC outline: 2.9 × 1.3 × 1.0 mm (L × W × H), with 0.95 mm lead pitch and gull-wing terminations.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input node; requires series resistor to limit I_B and ensure stable h_FE-based operation
2	Emiter	Common reference terminal in common-emitter configuration; connected to ground or low-impedance return path
3	Collector	Output current sink node; routed to load and supply rail with attention to trace inductance at >10 MHz

Key Features

Feature	Design Value
Guaranteed h_FE spread at 2 mA	250–460 - enables single-bias-network design across production lots without trim resistors
Low V_CE(sat) at 10 mA	≤350 mV - reduces conduction loss in battery-powered logic-level switches and LED drivers
FR4-qualified thermal resistance	500 K/W - allows direct use on standard PCBs without heatsinking for ≤100 mW dissipation
Complementary PNP pairing	BCW61C - enables matched push-pull output stages and differential amplifier inputs
Low noise figure	2–6 dB @ 1 kHz - supports use in microphone preamps and sensor signal conditioning without added op-amp stage

Applications

Audio Pre-amplifier Stage

Low-Voltage Logic Interface

Use Scenario: Amplifying weak signals from electret microphones or piezoelectric sensors in portable audio devices.

IC Role / Device Role / Timing Role: NPN BJT configured in common-emitter topology providing voltage gain with minimal added noise.

Use Value: 2–6 dB noise figure and 250–460 h_FE enable clean amplification at 2 mA bias without active feedback compensation.

Use Scenario: Level-shifting 1.8 V/3.3 V GPIO outputs to drive 5 V TTL-compatible inputs in mixed-voltage embedded systems.

IC Role / Device Role / Timing Role: Digital switch operating in saturation/cutoff with <350 mV V_CE(sat) at 10 mA drive.

Use Value: Low saturation voltage preserves logic-high margin while supporting >10 kΩ pull-up loads at 5 V.

LED Current Switch

Temperature Sensor Front-End

Use Scenario: Driving indicator LEDs in space-constrained IoT nodes where board area and power efficiency are critical.

IC Role / Device Role / Timing Role: Constant-current switch with emitter-degeneration resistor setting I_C ≈ 10–20 mA.

Use Value: 100 mA I_C rating and 50–350 mV V_CE(sat) allow reliable LED drive with <0.5 V dropout at 20 mA.

Use Scenario: Converting PT100 or thermistor resistance changes into amplified voltage signals in industrial temperature monitors.

IC Role / Device Role / Timing Role: Transconductance amplifier stage with emitter-follower buffer and gain-setting collector load.

Use Value: Stable h_FE over −65 to +150 °C and low C_c (1.7 pF) minimize drift and capacitive loading on sensor bridge outputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847C,215	Higher h_FE (420–800), same SOT23 package, V_CEO = 45 V, P_tot = 250 mW	Supports higher-voltage switching up to 45 V but exhibits greater h_FE variation across batches	Select when higher voltage margin or tighter gain tolerance is needed; verify base drive for consistent saturation.
MMBT3904LT1G	Same V_CEO (40 V), h_FE = 100–300 @ 10 mA, R_{th j-a} = 400 K/W, C_c = 4 pF	Lower gain consistency at low I_C, higher capacitance limits >50 MHz use; better thermal performance on FR4	Prefer for cost-sensitive, non-critical switching where 100–300 h_FE suffices and thermal headroom is constrained.

Compared with BCW60C,215, BC847C,215 offers higher voltage and gain headroom but less predictable low-current behavior, while MMBT3904LT1G trades gain stability and RF performance for improved thermal dissipation and broader availability.

Availability

BCW60C,215 is available at Aetrix Electronics and suitable for audio pre-amplifiers, low-voltage logic interfaces, LED current switches, and temperature sensor front-ends requiring stable component supply across production lifecycles.

Supply support for BCW60C,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The BCW60 series belongs to NXP's legacy general-purpose discrete transistor portfolio, designed specifically for cost-effective, reliable switching and amplification in space-constrained, low-power analog and mixed-signal circuits.

FAQ

Is BCW60C,215 RoHS compliant?

Yes, BCW60C,215 is RoHS compliant per EU Directive 2011/65/EU. The device uses lead-free solderable terminations and halogen-free molding compound, with full compliance documented in NXP's official product change notices dated 2006 onward.

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature (T_j) is 150 °C. For reliable long-term operation, junction temperature must remain ≤150 °C under worst-case ambient and power dissipation conditions, requiring thermal derating above 25 °C ambient per the 500 K/W R_{th j-a} specification.

Can BCW60C,215 be used in place of BCW60B or BCW60D?

Yes, but only with circuit validation. BCW60C has h_FE = 250–460 at 2 mA, between BCW60B (180–310) and BCW60D (380–630). Substitution may affect bias point stability and small-signal gain; verify operating point and thermal margin in final design.

Does BCW60C,215 have a qualified automotive grade variant?

No - BCW60C,215 is qualified for industrial and consumer applications only (−65 to +150 °C T_stg, −65 to +150 °C T_amb). NXP does not offer an AEC-Q101 qualified version of this part; automotive designs require alternatives such as PBSS4041T or MMBT3904Q.

BCW60C,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 32 V

Vce Saturation (Max) @ Ib, Ic:: 550mV @ 1.25mA, 50mA

Current - Collector Cutoff (Max):: 20nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 2mA, 5V

Power - Max:: 250 mW

Frequency - Transition:: 250MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BCW60C,215 FAQ

1.How can I place an order for BCW60C,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCW60C,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCW60C,215 reliable?

The price and inventory of BCW60C,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCW60C,215 is usually 5 days.

3.What payment methods are accepted for BCW60C,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCW60C,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCW60C,215?

BCW60C,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCW60C,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCW60C,215?

For technical support, including BCW60C,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCW60C,215 requirements.

6.How does Aetrix verify that BCW60C,215 is sourced from the original manufacturer or authorized distributors?

All BCW60C,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCW60C,215 meets industry standards.

7.What is the process for return or replacement of BCW60C,215?

All BCW60C,215 units undergo pre-shipment inspection (PSI). If there is an issue with BCW60C,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCW60C,215 part is unused and in its original packaging.

Return procedure for BCW60C,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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