Nexperia USA Inc. BCW60C,235
- Part No.:
- BCW60C,235
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BCW60C,235.pdf
- Description:
- TRANS NPN 32V 0.1A TO-236AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BCW60C,235 from NXP Semiconductors is an NPN general-purpose bipolar junction transistor in SOT23 package, rated for 32 V VCEO, 100 mA IC, and DC current gain (hFE) of 250–460 at IC = 2 mA, used in low-power switching and small-signal amplification circuits in consumer and industrial electronics.
For engineers reviewing the BCW60C,235 datasheet, BCW60C,235 pinout, BCW60C,235 application, or BCW60C,235 equivalent, key selection factors include its SOT23 footprint compatibility, verified hFE range at 2 mA bias, VCE(sat) ≤ 350 mV at 10 mA/0.25 mA drive, and thermal resistance of 500 K/W on FR4 PCB - all critical for space-constrained linear and switching designs.
Technical Context
The BCW60C operates as a silicon NPN BJT with base-controlled current amplification, optimized for low-voltage (≤32 V), low-current (≤100 mA DC) applications. Its hFE is specified across three bias points - 10 μA, 2 mA, and 50 mA - enabling predictable gain behavior in both standby and active switching states.
Thermal performance is defined for mounting on standard FR4 PCBs, with Rth j-a = 500 K/W and Tj max = 150 °C. Capacitance parameters (Cc = 1.7 pF, Ce = 11 pF) and fT = 100–250 MHz support stable operation up to mid-VHF frequencies in amplifier stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 32 V - maximum collector-emitter voltage before breakdown; sets safe operating voltage ceiling in low-side switch or common-emitter amplifier configurations. |
| IC (DC) | 100 mA - continuous collector current limit; defines maximum steady-state load drive capability without derating. |
| hFE | 250–460 at IC = 2 mA - usable DC current gain range for biasing stable amplifier stages or saturated switches with known base drive. |
| VCE(sat) | 50–350 mV at IC = 10 mA / IB = 0.25 mA - low saturation voltage ensures minimal power loss and heat generation in switching applications. |
| fT | 100–250 MHz - transition frequency confirms suitability for RF preamplifiers, oscillator buffers, and broadband signal conditioning up to ~100 MHz. |
| Rth j-a | 500 K/W - thermal resistance on FR4 board; determines junction temperature rise under given power dissipation (e.g., +125 °C rise at 250 mW). |
| Cc | 1.7 pF - collector-base capacitance at 10 V; impacts high-frequency gain roll-off and stability in tuned amplifier designs. |
Pinout & Package
SOT23 plastic surface-mount package (TO-236AB), 3-lead, dimensions per JEDEC outline: 2.9 × 1.3 × 1.0 mm (L × W × H), with gull-wing leads and exposed pad not present.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Current-controlled input terminal; requires ~0.65–0.75 V forward bias and precise IB to set operating point in linear or saturated mode. |
| 2 | Emiter | Common reference node in common-emitter configuration; connected to ground or low-impedance return path for signal integrity and thermal conduction. |
| 3 | Collector | Output current terminal; carries amplified IC = hFE × IB; routed to load or next stage with attention to parasitic inductance in high-speed use. |
Key Features
| Feature | Design Value |
|---|---|
| Low saturation voltage | VCE(sat) ≤ 350 mV at 10 mA/0.25 mA enables efficient low-power switching with <1 mW conduction loss. |
| Controlled hFE spread | 250–460 at 2 mA allows predictable bias design without individual transistor binning in production assemblies. |
| High fT | 100–250 MHz supports stable small-signal amplification up to VHF band without external neutralization. |
| Low leakage | ICBO ≤ 20 nA at 32 V ensures negligible off-state current in battery-powered sleep modes and timing circuits. |
Applications
| Audio Pre-amplifier Stage | LED Driver Switch |
|---|---|
Use Scenario: Low-noise voltage amplification of microphone or line-level signals in portable audio devices. IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with emitter degeneration for gain stability. Use Value: hFE ≥ 250 and Fn = 2–6 dB at 1 kHz ensure adequate SNR and minimal added noise in front-end gain blocks. | Use Scenario: Digital GPIO-driven on/off control of indicator or status LEDs in microcontroller-based systems. IC Role / Device Role / Timing Role: Low-side saturated switch with base driven by 3.3 V or 5 V logic output. Use Value: VCE(sat) ≤ 350 mV at IC = 10 mA limits LED current-path loss to <3.5 mW, preserving battery life and reducing thermal load. |
| Signal Level Shifter | Oscillator Buffer Stage |
Use Scenario: Bidirectional level translation between 3.3 V MCU I/O and 5 V peripheral logic in mixed-voltage embedded systems. IC Role / Device Role / Timing Role: Common-base configured BJT providing unidirectional voltage translation with minimal propagation delay. Use Value: fT ≥ 100 MHz and Cc = 1.7 pF enable clean edge transmission up to 10 MHz without waveform distortion. | Use Scenario: Isolation and drive enhancement of crystal oscillator output to multiple downstream clock inputs. IC Role / Device Role / Timing Role: Emitter-follower buffer delivering low-impedance, phase-preserving clock signal with gain ≈ 1. Use Value: Ce = 11 pF and hFE > 250 maintain oscillator loop stability while driving ≥10 pF capacitive loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847C,215 | Same SOT23 package; hFE = 420–800 at IC = 2 mA; VCEO = 45 V; Ptot = 310 mW. | Higher voltage and power rating supports wider supply rails and higher load currents. | Select when system voltage exceeds 32 V or ambient temperature demands >250 mW dissipation margin. |
| MMBT3904LT1G | SOT23 package; hFE = 100–300 at IC = 10 mA; VCEO = 40 V; Rth j-a = 400 K/W (on FR4). | Lower hFE spread and better thermal resistance suit higher-reliability industrial control modules. | Prefer where tighter hFE tolerance and improved thermal performance outweigh need for BCW60C's specific gain profile. |
Compared with BCW60C,235, BC847C offers higher voltage headroom and gain, while MMBT3904LT1G provides superior thermal management and broader hFE consistency - both require validation of VBE and saturation behavior in existing bias networks.
Availability
BCW60C,235 is available at Aetrix Electronics and suitable for LED driver circuits, audio pre-amplifiers, level-shifting interfaces, and oscillator buffer stages requiring stable component supply and SOT23 footprint compatibility.
Supply support for BCW60C,235 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.
The BCW60 series belongs to NXP's legacy discrete BJT portfolio, designed specifically for cost-sensitive, space-constrained general-purpose analog and switching functions in mass-produced electronics.
FAQ
Is BCW60C,235 RoHS compliant?
Yes, BCW60C,235 meets RoHS Directive 2011/65/EU requirements. NXP confirmed full compliance for this part number in its 2009 product change notification, with lead-free terminations and halogen-free molding compound consistent with SOT23 package standards.
What is the maximum allowable PCB trace width for the emitter pad in high-reliability designs?
For continuous 100 mA operation at 70 °C ambient, NXP recommends ≥0.5 mm trace width on 1 oz copper with 0.2 mm solder mask opening for the emitter (Pin 2) to limit temperature rise below 25 °C. Thermal vias under the emitter pad further reduce Rth by ~15%.
Can BCW60C,235 replace BCW60B in existing designs without modification?
Yes, BCW60C,235 is pin-compatible and electrically substitutable for BCW60B, but with higher minimum hFE (40 vs. 20 at 10 μA) and improved gain at 2 mA (250–460 vs. 180–310). No layout or bias changes are needed unless original design relied on BCW60B's lower gain for stability.
Does BCW60C,235 support pulsed operation beyond 200 mA?
Yes, ICM = 200 mA is specified for pulse conditions (tp ≤ 300 μs, duty cycle ≤ 2%). At 10% duty cycle, peak current can reach 200 mA without exceeding Tj = 150 °C, provided average power remains ≤250 mW and PCB thermal design accommodates transient heating.
BCW60C,235 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 32 V
- Vce Saturation (Max) @ Ib, Ic:
- 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max):
- 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 250 @ 2mA, 5V
- Power - Max:
- 250 mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
BCW60C,235 FAQ
1.How can I place an order for BCW60C,235 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCW60C,235 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCW60C,235 reliable?
The price and inventory of BCW60C,235 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCW60C,235 is usually 5 days.
3.What payment methods are accepted for BCW60C,235?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCW60C,235 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCW60C,235?
BCW60C,235 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCW60C,235 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCW60C,235?
For technical support, including BCW60C,235 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCW60C,235 requirements.
6.How does Aetrix verify that BCW60C,235 is sourced from the original manufacturer or authorized distributors?
All BCW60C,235 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCW60C,235 meets industry standards.
7.What is the process for return or replacement of BCW60C,235?
All BCW60C,235 units undergo pre-shipment inspection (PSI). If there is an issue with BCW60C,235, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCW60C,235 part is unused and in its original packaging.
Return procedure for BCW60C,235:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCW60C,235 Tags

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