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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BCW60D,215

Name: BCW60D,215
Brand: Nexperia USA Inc.
SKU: BCW60D,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCW60D,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BCW60D,215.pdf

Description:: TRANS NPN 32V 0.1A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BCW60D,215 from NXP Semiconductors is an NPN general-purpose bipolar junction transistor in SOT23 package, rated for 32 V V_CEO, 100 mA I_C, and DC current gain (h_FE) of 380–630 at I_C = 2 mA, used in low-power switching and small-signal amplification circuits in consumer and industrial electronics.

For engineers reviewing the BCW60D,215 datasheet, BCW60D,215 pinout, BCW60D,215 application, or BCW60D,215 equivalent, this page delivers verified electrical parameters, terminal roles, thermal behavior, noise performance, and real-world use context-critical for discrete BJT selection in space-constrained, cost-sensitive analog and digital interface stages.

Technical Context

The BCW60D,215 operates as a silicon NPN BJT with base-emitter forward bias enabling controlled collector current flow; its h_FE variation across I_C (100–630) reflects optimized gain linearity for mid-current signal stages. It features low V_CE(sat) (100–550 mV at I_C = 50 mA), supporting efficient switching in battery-powered logic interfaces.

Thermal resistance R_{th j-a} is 500 K/W on FR4 PCB, limiting continuous power dissipation to 250 mW at T_amb ≤ 25 °C; f_T = 100–250 MHz enables RF-capable small-signal amplification up to VHF band, while C_c = 1.7 pF and C_e = 11 pF define high-frequency impedance profile.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	32 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration.
I_C (DC)	100 mA - Continuous collector current limit defining linear and switching load capacity.
h_FE (I_C = 2 mA)	380–630 - DC current gain range ensuring predictable base drive requirements for amplification.
V_CE(sat) (I_C = 50 mA)	100–550 mV - Low saturation voltage minimizing power loss and heat generation in switch mode.
f_T	100–250 MHz - Transition frequency confirming usable bandwidth for VHF small-signal amplifiers.
C_c	1.7 pF - Collector-base capacitance affecting high-frequency gain roll-off and stability margin.
F (noise figure)	2–6 dB - Measured noise performance at 1 kHz, relevant for low-level audio and sensor front-end design.

Pinout & Package

SOT23 plastic surface-mount package (TO-236AB), 3-lead, dimensions per JEDEC outline: 2.9 × 1.3 × 1.0 mm (L × W × H), designed for automated placement and reflow soldering on FR4 PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control electrode; requires ~0.7 V forward bias and microampere-level current to enable collector conduction.
2	Emiter	Current source terminal in common-emitter configuration; connected to circuit ground or low-impedance reference.
3	Collector	Output current sink terminal; handles up to 100 mA DC with minimal saturation voltage under proper base drive.

Key Features

Feature	Design Value
Low-voltage operation	Rated for 32 V V_CEO, suitable for 3.3 V/5 V/12 V logic and interface circuits without overvoltage risk.
High DC current gain	h_FE = 380–630 at I_C = 2 mA reduces required base drive current, easing MCU GPIO or op-amp output loading.
Low saturation voltage	V_CE(sat) ≤ 550 mV at 50 mA enables >95% efficiency in low-side switching applications.
Small-outline packaging	SOT23 footprint saves board area versus TO-92, supports high-density layouts in portable and IoT devices.

Applications

LED Driver Circuit

Microcontroller Interface

Use Scenario: Driving 20 mA indicator LEDs from 3.3 V microcontroller GPIO pins.

IC Role / Device Role / Timing Role: Low-side NPN switch controlling LED current path to ground.

Use Value: V_CE(sat) ≤ 350 mV at 10 mA ensures <1 mW dissipation and full LED brightness without GPIO overload.

Use Scenario: Level-shifting and signal inversion between 1.8 V sensor output and 5 V ADC input stage.

IC Role / Device Role / Timing Role: Common-emitter amplifier providing gain and polarity inversion.

Use Value: h_FE ≥ 380 ensures stable 10× voltage gain with minimal base current draw from low-power sensor.

Audio Pre-amplifier Stage

Relay Driver Circuit

Use Scenario: Boosting weak microphone signals (10–100 mV) prior to filtering and digitization.

IC Role / Device Role / Timing Role: Small-signal common-emitter amplifier with emitter degeneration.

Use Value: f_T ≥ 100 MHz and F ≤ 6 dB support clean amplification up to 20 kHz with low added noise.

Use Scenario: Activating 12 V, 40 mA coil relays using 3.3 V logic outputs.

IC Role / Device Role / Timing Role: Saturated switch delivering full coil current with minimal voltage drop.

Use Value: I_C = 100 mA rating and V_CE(sat) ≤ 550 mV ensure reliable relay pull-in and reduced self-heating during extended duty cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847C,215	Higher h_FE (420–800), same SOT23, V_CEO = 45 V, P_tot = 250 mW	Better gain consistency at low I_C; wider voltage margin for 24 V systems	Select when higher gain stability or 45 V headroom is required without changing layout.
MMBT3904LT1G	Same V_CEO (40 V), h_FE = 100–300 at I_C = 10 mA, slightly higher V_CE(sat) (300 mV typ.)	Lower gain spread but less linear h_FE vs. I_C; broader industry availability	Choose for cost-sensitive production where moderate gain variation is acceptable and second-source assurance is critical.

Compared with BCW60D,215, BC847C,215 offers higher voltage margin and tighter gain distribution, while MMBT3904LT1G trades some gain linearity for wider supply chain access-both retain SOT23 compatibility but differ in gain-voltage trade-offs for specific analog or switching priorities.

Availability

BCW60D,215 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller interface stages, audio pre-amplifiers, and relay driver modules requiring stable component supply and consistent parametric performance across production batches.

Supply support for BCW60D,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The BCW60 series belongs to NXP's legacy general-purpose discrete transistor portfolio, engineered for cost-effective, reliable switching and amplification in space-constrained PCB designs where SOT23 footprint and predictable h_FE behavior are essential.

FAQ

What is the maximum continuous collector current for BCW60D,215?

The absolute maximum DC collector current (I_C) is 100 mA at T_amb ≤ 25 °C. Derating applies above 25 °C per the thermal resistance of 500 K/W; at 70 °C ambient, max I_C drops to approximately 65 mA to maintain junction temperature below 150 °C.

Is BCW60D,215 pin-compatible with BC847 or MMBT3904?

Yes-BCW60D,215 uses standard SOT23 pinout (1=Base, 2=Emitter, 3=Collector), matching BC847C,215 and MMBT3904LT1G. No PCB redesign is needed for substitution, though h_FE, V_CEO, and V_CE(sat) differences must be validated in-circuit.

Does BCW60D,215 support RF applications?

Yes-its f_T of 100–250 MHz and low capacitances (C_c = 1.7 pF, C_e = 11 pF) support small-signal amplification up to ~100 MHz. It is not specified for power RF or broadband matching but performs reliably in VHF receiver front-ends and local oscillator buffers.

What is the typical noise figure and where is it relevant?

The noise figure is 2–6 dB at I_C = 200 μA, V_CE = 5 V, R_S = 2 kΩ, and 1 kHz. This makes BCW60D,215 suitable for low-noise pre-amplification of audio, sensor, or instrumentation signals where input-referred noise must remain below 5 nV/√Hz.

BCW60D,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 32 V

Vce Saturation (Max) @ Ib, Ic:: 550mV @ 1.25mA, 50mA

Current - Collector Cutoff (Max):: 20nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 380 @ 2mA, 5V

Power - Max:: 250 mW

Frequency - Transition:: 250MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BCW60D,215 FAQ

1.How can I place an order for BCW60D,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCW60D,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCW60D,215 reliable?

The price and inventory of BCW60D,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCW60D,215 is usually 5 days.

3.What payment methods are accepted for BCW60D,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCW60D,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCW60D,215?

BCW60D,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCW60D,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCW60D,215?

For technical support, including BCW60D,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCW60D,215 requirements.

6.How does Aetrix verify that BCW60D,215 is sourced from the original manufacturer or authorized distributors?

All BCW60D,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCW60D,215 meets industry standards.

7.What is the process for return or replacement of BCW60D,215?

All BCW60D,215 units undergo pre-shipment inspection (PSI). If there is an issue with BCW60D,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCW60D,215 part is unused and in its original packaging.

Return procedure for BCW60D,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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