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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Infineon Technologies BCW60FFE6327HTSA1

Name: BCW60FFE6327HTSA1
Brand: Infineon Technologies
SKU: BCW60FFE6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCW60FFE6327HTSA1

Manufacturer:: Infineon Technologies

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BCW60FFE6327HTSA1.pdf

Description:: TRANS NPN 32V 0.1A PG-SOT23

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Product details

Overview

BCW60FFE6327HTSA1 from Infineon Technologies is an NPN silicon small-signal transistor in SOT-23 package, designed for audio-frequency input stages and driver circuits. It delivers h_FE = 250–500 (at I_C = 10 µA, V_CE = 5 V), V_CEO = 32 V, V_CE(sat) ≤ 0.25 V (I_C = 50 mA, I_B = 1.25 mA), and low noise of 2 dB (f = 1 kHz, ∆f = 200 Hz, R_S = 2 kΩ), enabling high-fidelity preamplifier and line-driver applications.

For engineers reviewing the BCW60FFE6327HTSA1 datasheet, BCW60FFE6327HTSA1 pinout, BCW60FFE6327HTSA1 application, or BCW60FFE6327HTSA1 equivalent, key selection criteria include DC current gain group FF, low V_CE(sat) at medium current, thermal resistance ≤240 K/W, RoHS-compliant SOT-23 packaging, and AEC-Q101 qualification for automotive signal conditioning.

Technical Context

This transistor operates as a linear amplifying device with fixed-emitter bias topology, optimized for stable h_FE across I_C = 10 µA to 50 mA and V_CE = 1–5 V. Its f_T = 250 MHz supports wideband AF response up to 15 kHz with minimal phase distortion.

The device exhibits low C_cb = 0.95 pF and C_eb = 9 pF, ensuring minimal Miller effect in common-emitter configurations. Junction temperature rating of 150 °C and R_thJS ≤ 240 K/W enable reliable operation in thermally constrained PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	32 V - Maximum collector-emitter voltage before breakdown under open-base condition; sets safe operating voltage headroom for 24 V rail systems.
h_FE (I_C = 10 µA)	250–500 - High DC current gain enables low-base-drive designs in high-impedance sensor interfaces and microphone preamps.
V_CE(sat)	≤ 0.25 V @ I_C = 50 mA - Low saturation voltage minimizes power loss and self-heating in Class-A driver stages.
f_T	250 MHz - Transition frequency ensures flat gain response through audio band and into ultrasonic range for feedback-stable designs.
Noise Figure	2 dB @ 1 kHz - Measured noise performance suitable for low-level analog signal amplification without added background hiss.
P_tot	330 mW @ T_S ≤ 71 °C - Power dissipation limit defines maximum continuous DC load in SOT-23 footprint with standard PCB copper area.

Pinout & Package

SOT-23 plastic surface-mount package with gull-wing leads; standardized 3-pin configuration for automated placement and reflow compatibility.

Pin/Terminal	Circuit Role	Design Meaning
1 (B)	Base	Control terminal accepting base current to modulate collector current; requires series resistor for current-limited biasing.
2 (E)	Emitter	Reference node for bias network; typically grounded or connected to emitter degeneration resistor in amplifier topologies.
3 (C)	Collector	Output current terminal delivering amplified signal; connects to load resistor or next-stage input in common-emitter configuration.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics per stress-test requirements including HTOL, TC, and HTRB - supports under-hood and infotainment module use.
Low-noise AF operation	2 dB noise figure and 0.135 µV equivalent input noise voltage at 10–50 Hz enable clean amplification of piezoelectric and electret microphone signals.
High h_FE group FF	Guaranteed h_FE ≥ 250 at I_C = 10 µA ensures predictable bias point stability in high-gain discrete op-amp input stages.
RoHS-compliant SOT-23	Lead-free termination and halogen-free molding compound meet EU Directive 2011/65/EU and IPC-J-STD-020 moisture sensitivity level 1.

Applications

Audio Preamplifier Stage

Automotive Sensor Interface

Use Scenario: Amplifying low-level output from electret condenser microphones in hands-free calling modules.

IC Role / Device Role / Timing Role: NPN small-signal transistor configured in common-emitter topology for voltage gain and impedance transformation.

Use Value: 2 dB noise figure and h_FE ≥ 250 ensure SNR preservation while driving 10 kΩ load with <1% THD at 1 kHz.

Use Scenario: Conditioning analog output from temperature or pressure sensors in engine control units.

IC Role / Device Role / Timing Role: Linear amplifier providing gain and offset adjustment prior to ADC sampling.

Use Value: AEC-Q101 qualification and 150 °C T_j rating guarantee operation across -40 °C to +125 °C ambient ranges.

Line Driver Circuit

Discrete Op-Amp Input Pair

Use Scenario: Driving 600 Ω balanced audio lines over short PCB traces in professional audio mixers.

IC Role / Device Role / Timing Role: Emitter-follower buffer stage delivering low-output-impedance drive capability.

Use Value: V_CE(sat) ≤ 0.25 V at 50 mA enables >10 mA output swing with <50 mV droop, preserving signal fidelity.

Use Scenario: Forming differential pair in discrete instrumentation amplifier front-end for medical ECG signal acquisition.

IC Role / Device Role / Timing Role: Matched NPN transistor pair (with BCW61FF) establishing precise transconductance and common-mode rejection.

Use Value: Tight h_FE grouping (FF) and low C_cb = 0.95 pF minimize gain mismatch and capacitive imbalance between legs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847B,215	V_CEO = 45 V, h_FE = 200–450 (group B), f_T = 100 MHz, higher C_cb = 4.5 pF	Higher voltage rating suits 36 V industrial rails but lower f_T limits bandwidth-critical AF designs	Select when extended V_CEO margin is prioritized over noise and high-frequency linearity
MMBT3904LT1G	V_CEO = 40 V, h_FE = 100–300 (min), f_T = 300 MHz, noise figure = 5 dB	Higher f_T supports wider bandwidth but elevated noise degrades low-level signal integrity	Prefer for RF-coupled AF stages where gain-bandwidth product outweighs noise floor requirements

Compared with BC847B,215 and MMBT3904LT1G, BCW60FFE6327HTSA1 offers superior noise performance and tighter h_FE grouping for precision analog gain stages, while trading off voltage headroom and absolute f_T - optimal for automotive and professional audio where SNR and matching dominate.

Availability

BCW60FFE6327HTSA1 is available at Aetrix Electronics and suitable for automotive sensor interfaces, professional audio preamplifiers, line driver circuits, and discrete op-amp input stages requiring stable component supply and AEC-Q101 compliance.

Supply support for BCW60FFE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.

BCW60FFE6327HTSA1 belongs to Infineon's BCW/BCX family of general-purpose bipolar transistors engineered for high-reliability analog signal conditioning in automotive and industrial environments.

FAQ

Is BCW60FFE6327HTSA1 pin-compatible with BCW60C or BCW60D?

Yes - all BCW60 variants (B/C/D/FF) share identical SOT-23 pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. The suffix denotes h_FE gain group and minor parameter binning, not physical layout change.

What is the maximum allowable junction temperature during pulsed operation?

The absolute maximum junction temperature remains 150 °C regardless of pulse duty cycle. Permissible pulse power is governed by thermal time constants: P_tot(max)/P_tot(DC) = 5 at t_p = 100 µs (D = 5%), dropping to 1.5 at t_p = 10 ms per Figure 8 in the datasheet.

Does BCW60FFE6327HTSA1 support lead-free reflow soldering profiles?

Yes - it is RoHS-compliant with lead-free terminations and rated for JEDEC J-STD-020D Level 1 moisture sensitivity. Standard Pb-free reflow peak temperature of 260 °C for ≤ 10 seconds is fully supported without degradation.

Can this transistor be used in complementary pair configurations with PNP devices?

Yes - BCW60FF is explicitly paired with BCW61FF (PNP) as a complementary match. Both share matched h_FE grouping, V_CEO/V_EBO ratings, and thermal characteristics, enabling balanced push-pull and differential amplifier designs.

BCW60FFE6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 32 V

Vce Saturation (Max) @ Ib, Ic:: 550mV @ 1.25mA, 50mA

Current - Collector Cutoff (Max):: 20nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 2mA, 5V

Power - Max:: 330 mW

Frequency - Transition:: 250MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BCW60FFE6327HTSA1 FAQ

1.How can I place an order for BCW60FFE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCW60FFE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCW60FFE6327HTSA1 reliable?

The price and inventory of BCW60FFE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCW60FFE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BCW60FFE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCW60FFE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCW60FFE6327HTSA1?

BCW60FFE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCW60FFE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCW60FFE6327HTSA1?

For technical support, including BCW60FFE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCW60FFE6327HTSA1 requirements.

6.How does Aetrix verify that BCW60FFE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BCW60FFE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCW60FFE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BCW60FFE6327HTSA1?

All BCW60FFE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCW60FFE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCW60FFE6327HTSA1 part is unused and in its original packaging.

Return procedure for BCW60FFE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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