Infineon Technologies BCW60FNE6393HTSA1
- Part No.:
- BCW60FNE6393HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BCW60FNE6393HTSA1.pdf
- Description:
- TRANS NPN 32V 0.1A PG-SOT23
- Quantity:
- Payment:

- Shipping:

Inventory:6,635
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Product details
Overview
BCW60FNE6393HTSA1 from Infineon Technologies is an NPN silicon small-signal transistor designed for audio-frequency input stages and driver applications. It delivers high DC current gain (hFE = 250–500 at IC = 2 mA), low VCE(sat) (0.12 V max at IC = 10 mA), and low noise (2 dB typical at 1 kHz, 100 µA). Used in portable audio preamps and low-power signal buffering circuits.
For engineers reviewing the BCW60FNE6393HTSA1 datasheet, BCW60FNE6393HTSA1 pinout, BCW60FNE6393HTSA1 application, or BCW60FNE6393HTSA1 equivalent, key selection criteria include hFE group F/N matching, SOT23 thermal resistance (RthJS = 240 K/W), VCEO = 32 V rating, and 100 mA DC collector current capability.
Technical Context
This transistor operates as a linear amplifying device in Class-A or Class-AB bias configurations, with verified hFE stability across IC = 10 µA to 50 mA and VCE = 1–5 V. Its fT of 250 MHz supports stable gain up to mid-VHF range under small-signal conditions.
Designed for low-noise analog front-ends, it exhibits Ccb = 3 pF and Ceb = 8 pF at specified bias points, and achieves Vn = 0.135 µV (10–50 Hz) with 2 kΩ source impedance - confirming suitability for high-fidelity audio signal paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 32 V - maximum safe collector-emitter voltage before breakdown in common-emitter configuration |
| IC (DC) | 100 mA - continuous collector current limit defining usable output drive capability |
| hFE @ IC = 2 mA | 250–500 - current gain range enabling precise biasing in low-current amplifier stages |
| VCE(sat) @ IC = 10 mA | 0.12 V max - ensures minimal voltage drop and power loss in saturated switching or emitter-follower use |
| fT | 250 MHz - transition frequency confirming usable bandwidth for AF and low-RF signal amplification |
| Noise Figure | 2 dB @ 1 kHz - quantifies added noise in sensitive preamplifier inputs requiring high SNR |
| RthJS | 240 K/W - junction-to-soldering-point thermal resistance, critical for thermal design in SOT23 footprint |
Pinout & Package
SOT23 plastic surface-mount package with gull-wing leads; compact 2.9 mm × 1.3 mm footprint and 1.0 mm height, optimized for automated assembly and thermal dissipation via PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | E | Current sink node; connects to ground or bias network in common-emitter or emitter-follower topologies |
| 2 (Base) | B | Control terminal; requires current-limited drive to achieve target hFE-dependent collector current |
| 3 (Collector) | C | Output node; delivers amplified current to load or next stage, referenced to VCC or pull-up resistor |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | 0.12 V max at IC = 10 mA enables efficient operation in battery-powered emitter followers |
| High hFE consistency | 250–500 at IC = 2 mA supports stable DC bias without trimming resistors |
| Low 1/f noise | 0.135 µV (10–50 Hz) meets requirements for microphone preamp and sensor interface stages |
| Complementary PNP pairing | Matched performance with BCW61/BCX71 allows balanced push-pull output designs |
Applications
| Portable Audio Preamp | Low-Power Sensor Interface |
|---|---|
Use Scenario: Amplifying weak signals from electret microphones in Bluetooth headsets and voice recorders. IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with fixed bias network. Use Value: 2 dB noise figure and 250+ hFE ensure clean gain without adding audible hiss or requiring complex feedback compensation. | Use Scenario: Buffering and level-shifting output from thermistor or photodiode front-ends in wearable health monitors. IC Role / Device Role / Timing Role: Emitter-follower buffer providing low-output-impedance drive to ADC input. Use Value: 0.12 V VCE(sat) minimizes offset error and preserves dynamic range under 3.3 V supply constraints. |
| LED Driver Stage | Signal-Level Translation |
Use Scenario: Driving medium-brightness indicator LEDs in industrial control panels with 5 V logic. IC Role / Device Role / Timing Role: Switch-mode current sink in common-emitter configuration with base resistor control. Use Value: 100 mA IC rating and 0.25 V VCE(sat) at 50 mA enable reliable on/off control with <100 mW dissipation. | Use Scenario: Translating 1.8 V logic outputs to 3.3 V or 5 V levels in mixed-voltage MCU subsystems. IC Role / Device Role / Timing Role: Level-shifter using saturated switch operation with defined VBE(sat) and hFE. Use Value: Predictable VBE(sat) (0.7–0.85 V) and fast turn-on support sub-microsecond edge transitions without overshoot. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN small-signal transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847B,215 (Nexperia) | VCEO = 45 V, hFE = 200–450 @ IC = 2 mA, RthJS = 300 K/W | Higher voltage rating but lower thermal efficiency; less suitable for sustained 100 mA operation | Select when higher breakdown margin is required and thermal headroom is available |
| MMBT3904LT1G (ON Semiconductor) | VCEO = 40 V, hFE = 100–300 @ IC = 10 mA, Ccb = 4 pF | Lower hFE spread and higher capacitance reduce low-noise AF performance | Prefer for general-purpose switching where noise and gain precision are secondary |
Compared with BC847B and MMBT3904LT1G, BCW60FNE6393HTSA1 offers superior noise performance (2 dB vs ≥4 dB), tighter hFE grouping for matched pairs, and lower RthJS, making it optimal for thermally constrained, low-noise analog signal chains.
Availability
BCW60FNE6393HTSA1 is available at Aetrix Electronics and suitable for portable audio preamps, low-power sensor interfaces, LED driver stages, and signal-level translation circuits requiring stable component supply and consistent hFE grading.
Supply support for BCW60FNE6393HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices with global manufacturing and quality certification (IATF 16949, ISO 9001).
This part belongs to Infineon's BCW/BCX family of silicon bipolar transistors engineered for high-fidelity audio, precision analog sensing, and low-power linear amplification in space-constrained applications.
FAQ
What hFE group does BCW60FNE6393HTSA1 belong to?
BCW60FNE6393HTSA1 is hFE group F/N, meaning its DC current gain ranges from 250 to 500 at IC = 2 mA and VCE = 5 V. This grouping is laser-marked on the device and confirmed in Infineon's BCW60/BCX70 datasheet revision Jan-29-2002, page 3.
Can BCW60FNE6393HTSA1 replace BCW60C in existing designs?
Yes, BCW60FNE6393HTSA1 is functionally compatible with BCW60C but offers higher hFE (250–500 vs 140–300) and identical SOT23 pinout and ratings. No layout or bias changes are needed, though gain-dependent stages may require minor recalibration due to increased current gain.
What is the maximum allowable junction temperature during pulsed operation?
The absolute maximum junction temperature remains 150 °C per datasheet. Under pulsed conditions (tp ≤ 300 µs, duty cycle ≤ 2%), peak power can reach 270 mW (Ptot(max)/Ptot(DC) ≈ 0.82), provided average power stays within 330 mW derated by ambient and board thermal design.
Is BCW60FNE6393HTSA1 RoHS compliant and halogen-free?
Yes, BCW60FNE6393HTSA1 conforms to RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The "HTSA1" suffix denotes Infineon's standard green packaging, verified in the official product change notice PCN-2019-0012.
BCW60FNE6393HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 32 V
- Vce Saturation (Max) @ Ib, Ic:
- 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max):
- 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 380 @ 2mA, 5V
- Power - Max:
- 330 mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BCW60FNE6393HTSA1 FAQ
1.How can I place an order for BCW60FNE6393HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCW60FNE6393HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCW60FNE6393HTSA1 reliable?
The price and inventory of BCW60FNE6393HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCW60FNE6393HTSA1 is usually 5 days.
3.What payment methods are accepted for BCW60FNE6393HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCW60FNE6393HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCW60FNE6393HTSA1?
BCW60FNE6393HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCW60FNE6393HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCW60FNE6393HTSA1?
For technical support, including BCW60FNE6393HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCW60FNE6393HTSA1 requirements.
6.How does Aetrix verify that BCW60FNE6393HTSA1 is sourced from the original manufacturer or authorized distributors?
All BCW60FNE6393HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCW60FNE6393HTSA1 meets industry standards.
7.What is the process for return or replacement of BCW60FNE6393HTSA1?
All BCW60FNE6393HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCW60FNE6393HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCW60FNE6393HTSA1 part is unused and in its original packaging.
Return procedure for BCW60FNE6393HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCW60FNE6393HTSA1 Tags

-
MMBT3906LT1G
onsemi

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MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

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MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

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MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

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MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

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MMBT2222ALT1G
onsemi
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