Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi BCW61CMTF

Part No.:
BCW61CMTF
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBCW61CMTF.pdf
Description:
TRANS PNP 32V 0.1A SOT-23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,074

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BCW61CMTF from ON Semiconductor (formerly Fairchild) is a PNP epitaxial silicon general-purpose transistor in SOT-23 package, rated for -32 V VCEO, -100 mA IC, and 350 mW PC, commonly used in low-power switching and amplification circuits in consumer and industrial control systems.

For engineers reviewing the BCW61CMTF datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain (hFE = 100–220 at IC = -2 mA), VCE(sat) ≤ -0.25 V at IC = -10 mA, noise figure of 6 dB, and SOT-23 thermal and layout compatibility.

Technical Context

The BCW61CMTF operates as a medium-speed PNP bipolar junction transistor with defined breakdown limits (VCBO = -32 V, VEBO = -5.0 V) and low-noise performance (NF = 6 dB at 1 kHz). Its hFE binning is specified across test conditions: 100–220 at VCE = -5 V, IC = -2 mA; 140–310 at IC = -50 mA.

Switching behavior is characterized by tON = 150 ns and tOFF = 800 ns under defined load and drive conditions. Output capacitance (Cob = 6 pF at VCB = -10 V, f = 1 MHz) supports stable operation in audio-frequency and low-speed digital interface stages.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO-32 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration
IC-100 mA - Continuous collector current rating defining maximum linear or switching load capability
PC350 mW - Total power dissipation limit at TA = 25°C, constraining thermal design in SOT-23
hFE100–220 - DC current gain range at VCE = -5 V, IC = -2 mA, enabling predictable base drive sizing
VCE(sat)≤ -0.25 V - Saturation voltage at IC = -10 mA, IB = -0.25 mA, minimizing conduction loss in switch mode
NF6 dB - Noise figure at IC = -0.2 mA, VCE = -5 V, RG = 20 kΩ, 1 kHz, suitable for low-noise preamp stages
Cob6 pF - Output capacitance at VCB = -10 V, f = 1 MHz, limiting high-frequency bandwidth and stability margin

Pinout & Package

SOT-23 plastic surface-mount package with gull-wing leads; standardized 3-pin footprint (1.90 mm × 1.30 mm body, 0.95 mm lead pitch); JEDEC MO-178 compliant.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl terminal for forward-biased PNP operation; requires negative bias relative to emitter to enable conduction
2EmitterCurrent source terminal in PNP configuration; typically connected to higher potential rail in switching applications
3CollectorCurrent sink terminal; output node where load is connected between collector and ground or lower potential

Key Features

FeatureDesign Value
PNP polarity with -32 V ratingEnables high-side switching and complementary pair use with NPN transistors like BCW60 series
hFE binning (BCW61C)Guarantees minimum hFE ≥ 100 at IC = -2 mA, simplifying base resistor selection for consistent turn-on
VCE(sat) ≤ -0.25 VReduces power loss and self-heating during saturated switching, critical for thermally constrained SOT-23 layouts
6 dB noise figureSupports low-noise signal amplification in microphone preamps or sensor front-ends without added filtering complexity
150 ns turn-on timePermits reliable operation in pulse-width modulation (PWM) control up to ~2 MHz with adequate drive strength

Applications

Audio Signal AmplificationLow-Voltage Switching Control

Use Scenario: Amplifying weak analog signals from electret microphones or piezoelectric sensors in battery-powered voice recorders.

IC Role / Device Role / Timing Role: PNP small-signal amplifier configured in common-emitter topology with fixed bias network.

Use Value: 6 dB noise figure and hFE ≥ 100 ensure clean gain without introducing audible hiss or requiring complex feedback compensation.

Use Scenario: Driving LED indicators or small relays from 3.3 V or 5 V microcontroller GPIO pins in industrial HMIs.

IC Role / Device Role / Timing Role: Low-side or high-side switch controlling current path to load via saturated PNP operation.

Use Value: VCE(sat) ≤ -0.25 V at IC = -10 mA minimizes voltage drop and heat generation in compact SOT-23 PCB footprints.

Complementary Pair BiasingSignal Level Translation

Use Scenario: Forming Class AB output stages with matched NPN counterparts (e.g., BCW60C) in miniature audio amplifiers.

IC Role / Device Role / Timing Role: PNP half of complementary emitter-follower pair providing symmetrical sourcing/sinking capability.

Use Value: Matched VCEO (-32 V), IC (-100 mA), and hFE binning enable balanced crossover distortion reduction.

Use Scenario: Shifting logic levels between 5 V and 3.3 V domains in mixed-voltage embedded systems.

IC Role / Device Role / Timing Role: Active pull-up stage converting open-drain or TTL outputs to CMOS-compatible high-level signals.

Use Value: Fast tON/tOFF (150/800 ns) and low Cob (6 pF) preserve edge integrity up to 1–2 MHz data rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BC856B,115Higher hFE (220–450), same SOT-23, VCEO = -65 V, PC = 250 mWBetter gain consistency at low IC; lower power rating limits high-current switchingSelect when higher DC gain and improved voltage margin are prioritized over power handling
MMBT4403VCEO = -40 V, hFE = 100–300, PC = 350 mW, same pinoutWider VCEO margin and broader hFE range support more aggressive supply rails and variable loadsPreferred for designs requiring extended voltage headroom without changing layout or drive circuitry

Compared with BCW61CMTF, BC856B,115 offers superior gain and voltage rating but reduced power dissipation, while MMBT4403 provides identical thermal capability with enhanced breakdown safety-both require verification of hFE distribution and saturation behavior in target operating points.

Availability

BCW61CMTF is available at Aetrix Electronics and suitable for low-power switching, analog amplification, and level translation applications requiring stable component supply, consistent hFE binning, and SOT-23 footprint compatibility.

Supply support for BCW61CMTF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, and IoT applications.

The BCW61CMTF belongs to ON Semiconductor's legacy general-purpose bipolar transistor product line, designed for cost-sensitive, space-constrained applications demanding reliable DC amplification and switching in consumer electronics and industrial controls.

FAQ

What is the maximum collector-emitter voltage rating for BCW61CMTF?

The BCW61CMTF has a maximum collector-emitter voltage (VCEO) rating of -32 V at TA = 25°C. This rating defines the upper limit of reverse bias that can be safely applied between collector and emitter with the base open. Exceeding this value risks avalanche breakdown and permanent device damage. The BCW61CMTF must be operated within this absolute maximum to ensure reliability in circuits such as high-side switches or amplifier stages.

What is the typical DC current gain (hFE) range for BCW61CMTF?

The BCW61CMTF is binned as the 'C' variant, specifying hFE = 100–220 at VCE = -5 V and IC = -2 mA. At higher currents (IC = -50 mA), hFE ranges from 140 to 310. This gain range enables predictable base drive design for both linear amplification and saturated switching. The BCW61CMTF's hFE bin ensures consistent performance across production lots without requiring individual calibration.

Does BCW61CMTF have a specified noise figure, and under what conditions?

Yes, the BCW61CMTF has a specified noise figure of 6 dB, measured at IC = -0.2 mA, VCE = -5 V, RG = 20 kΩ, and f = 1 kHz. This value reflects its suitability for low-noise small-signal amplification tasks, such as microphone preamplifiers or sensor signal conditioning. The BCW61CMTF's noise performance is stable across its qualified operating range and is not extrapolated from other variants or package types.

What is the pin configuration of BCW61CMTF, and how is it oriented on the PCB?

The BCW61CMTF uses the standard SOT-23 package with pin 1 (Base) at the left when the marking side faces up and the tab (or notch) is oriented toward the viewer's left. Pin 2 is Emitter, and pin 3 is Collector. This 1-2-3 left-to-right layout matches JEDEC MO-178 and is identical to BCW60, BC856, and MMBT4403. Correct orientation is essential for functional operation, as reversing the emitter and collector will prevent proper PNP conduction in the BCW61CMTF.

Can BCW61CMTF be used as a direct replacement for BCW61B or BCW61D in existing designs?

No-BCW61CMTF is not a direct replacement for BCW61B or BCW61D due to differences in hFE binning: BCW61B specifies hFE = 40–120, while BCW61D specifies 250–630. Substituting BCW61CMTF (100–220) may alter base drive requirements, saturation behavior, or amplifier gain. The BCW61CMTF should only replace BCW61C-marked units. Always verify bias point stability and switching timing when interchanging variants, even within the same BCW61 family.

BCW61CMTF Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
32 V
Vce Saturation (Max) @ Ib, Ic:
550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max):
20nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 2mA, 5V
Power - Max:
350 mW
Frequency - Transition:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

BCW61CMTF FAQ

1.How can I place an order for BCW61CMTF through Aetrix?

Please submit a Request for Quotation (RFQ) for BCW61CMTF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCW61CMTF reliable?

The price and inventory of BCW61CMTF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCW61CMTF is usually 5 days.

3.What payment methods are accepted for BCW61CMTF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCW61CMTF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCW61CMTF?

BCW61CMTF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCW61CMTF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCW61CMTF?

For technical support, including BCW61CMTF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCW61CMTF requirements.

6.How does Aetrix verify that BCW61CMTF is sourced from the original manufacturer or authorized distributors?

All BCW61CMTF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCW61CMTF meets industry standards.

7.What is the process for return or replacement of BCW61CMTF?

All BCW61CMTF units undergo pre-shipment inspection (PSI). If there is an issue with BCW61CMTF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCW61CMTF part is unused and in its original packaging.

Return procedure for BCW61CMTF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BCW61CMTF Tags

  • BCW61CMTF
  • BCW61CMTF PDF
  • BCW61CMTF Datasheet
  • BCW61CMTF Specifications
  • BCW61CMTF Images
  • onsemi
  • onsemi BCW61CMTF
  • Buy BCW61CMTF
  • BCW61CMTF Price
  • BCW61CMTF Distributor
  • BCW61CMTF Supplier
  • BCW61CMTF Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER