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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Infineon Technologies BCW61DE6327HTSA1

Name: BCW61DE6327HTSA1
Brand: Infineon Technologies
SKU: BCW61DE6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCW61DE6327HTSA1

Manufacturer:: Infineon Technologies

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BCW61DE6327HTSA1.pdf

Description:: TRANS PNP 32V 0.1A PG-SOT23

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Product details

Overview

BCW61DE6327HTSA1 from Infineon Technologies is a PNP silicon small-signal bipolar junction transistor (BJT) designed for audio-frequency input stages and driver circuits. It delivers h_FE = 100–110 at I_C = 2 mA, V_CE = 5 V; V_CEO = 32 V; V_CE(sat) ≤ 0.25 V at I_C = 50 mA, I_B = 1.25 mA; and f_T = 250 MHz - enabling low-noise amplification in portable audio preamps.

For engineers reviewing the BCW61DE6327HTSA1 datasheet, BCW61DE6327HTSA1 pinout, BCW61DE6327HTSA1 application, or BCW61DE6327HTSA1 equivalent, key selection criteria include guaranteed h_FE group D (100–110), SOT23 package thermal resistance (R_thJS ≤ 240 K/W), low V_CE(sat) for efficient switching, and AEC-Q101 qualification for automotive signal conditioning.

Technical Context

This transistor operates as a linear amplifier or saturated switch in low-power analog and digital interface stages. Its h_FE group D ensures consistent current gain across production lots at I_C = 2 mA and I_C = 50 mA, while the 250 MHz f_T supports stable operation up to mid-audio frequencies with minimal phase shift.

The device features low noise figure (F = 2 dB at I_C = 200 µA, f = 1 kHz) and tight V_BE(sat) distribution (0.83–0.85 V at I_C = 50 mA), making it suitable for precision biasing networks and low-distortion preamplifier designs where thermal stability and gain predictability are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	32 V - maximum collector-emitter voltage before breakdown under open-base conditions; sets safe operating range for 24 V rail interfaces
h_FE (I_C = 2 mA)	100–110 - guaranteed DC current gain group D; enables predictable base drive sizing in emitter-follower buffers
V_CE(sat)	≤ 0.25 V at I_C = 50 mA - low saturation voltage minimizes power loss and self-heating in switching applications
f_T	250 MHz - transition frequency confirms usable bandwidth up to ~20 kHz with margin for audio signal integrity
Noise Figure	2 dB at I_C = 200 µA - quantified low-noise performance for high-gain front-end amplification
R_thJS	≤ 240 K/W - junction-to-soldering-point thermal resistance supports reliable operation at T_S ≤ 71 °C in compact PCB layouts

Pinout & Package

BCW61DE6327HTSA1 is housed in a RoHS-compliant SOT23 plastic surface-mount package with standard lead finish and AEC-Q101 qualification for automotive use.

Pin/Terminal	Circuit Role	Design Meaning
1 (B)	Base	Current-controlled input terminal; requires series resistor to limit I_B and ensure h_FE-driven I_C compliance
2 (E)	Emitter	Common reference terminal for PNP configuration; connects to higher-potential rail in typical common-emitter setups
3 (C)	Collector	Output current terminal; sinks current when base is forward-biased; routed to load or next stage input

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics per stress test requirements - supports deployment in infotainment and body control modules
Low V_CE(sat)	≤ 0.25 V at I_C = 50 mA - reduces conduction loss and improves efficiency in discrete driver stages
Group D h_FE	100–110 at I_C = 2 mA - enables tighter gain matching across channels in dual-amplifier or differential pair designs
Low-noise operation	F = 2 dB at 1 kHz - meets SNR targets in microphone preamplifiers and sensor signal conditioning paths

Applications

Audio Preamp Stage

Automotive Door Module Driver

Use Scenario: Low-level signal amplification from electret microphones in voice-activated systems.

IC Role / Device Role / Timing Role: PNP BJT configured as common-emitter amplifier with fixed bias network.

Use Value: 2 dB noise figure and stable h_FE group D ensure consistent gain and minimal added noise across temperature and unit variance.

Use Scenario: Driving LED indicators and small solenoids in vehicle door control units.

IC Role / Device Role / Timing Role: Saturated switch controlling 50 mA loads from 12 V battery rail.

Use Value: V_CE(sat) ≤ 0.25 V limits power dissipation to <13 mW, eliminating need for heatsinking in space-constrained modules.

Industrial Sensor Interface

Portable Medical Pulse Oximeter Front-End

Use Scenario: Amplifying millivolt-level bridge outputs from pressure transducers.

IC Role / Device Role / Timing Role: High-input-impedance emitter follower providing level-shifting and buffering.

Use Value: h_FE ≥ 100 ensures low base current draw (<5 µA), preserving sensor excitation accuracy and linearity.

Use Scenario: Signal conditioning for photodiode current in wearable pulse detection circuits.

IC Role / Device Role / Timing Role: Transimpedance amplifier input stage with low-noise PNP topology.

Use Value: Verified 250 MHz f_T and 2 dB noise figure support clean acquisition of 0.5–5 Hz physiological waveforms without aliasing or distortion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC807-25,115	h_FE = 160–250 (group C); V_CEO = 45 V; SOT23 package	Higher gain and breakdown voltage - better for higher-voltage logic interfacing but less precise gain control	Select when wider V_CEO margin or higher h_FE tolerance is required; verify base drive compatibility due to higher β
MMBT3906LT1G	h_FE = 100–300 (wide spread); V_CEO = 40 V; same SOT23 footprint	Unbinned h_FE distribution increases design margining effort; not AEC-Q101 qualified	Use only in non-automotive consumer applications where cost is prioritized over gain consistency and qualification

Compared with BC807-25,115 and MMBT3906LT1G, BCW61DE6327HTSA1 offers tighter h_FE grouping (D), AEC-Q101 certification, and lower noise - making it preferable for automotive audio and precision industrial sensing where repeatability and reliability are mandatory.

Availability

BCW61DE6327HTSA1 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial sensor signal chains, and portable medical device front-ends requiring stable component supply and long-term lifecycle assurance.

Supply support for BCW61DE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BCW61DE6327HTSA1 belongs to Infineon's BCW/BCX family of general-purpose PNP/NPN transistors engineered for high-reliability analog signal conditioning and switching in automotive and industrial environments.

FAQ

Is BCW61DE6327HTSA1 pin-compatible with BCX71J?

Yes - both share identical SOT23 pinout (B-E-C) and complementary PNP/NPN functionality. However, BCX71J is an NPN device with V_CEO = 45 V and h_FE group J (250–380), so direct substitution requires circuit polarity reversal and gain recalculations.

What is the maximum continuous collector current at 100°C ambient?

At T_A = 100°C, derating applies: P_tot drops to ~165 mW (per R_thJA curve), limiting I_C to approximately 40 mA at V_CE = 5 V to stay within thermal limits - verified via Fig. 7 (P_tot vs. T_S) in the official datasheet.

Does BCW61DE6327HTSA1 support pulsed operation beyond 200 mA?

Yes - peak collector current I_CM = 200 mA is rated for pulses ≤ 10 ms (duty cycle ≤ 2%). The permissible pulse load curve (Fig. 8) confirms safe operation at 300 mA for 100 µs pulses, provided average power remains within 330 mW limits.

How does the noise performance compare between h_FE groups A and D?

Noise figure is specified identically (2 dB typ.) across all h_FE groups at I_C = 200 µA. Group differentiation affects only DC gain - not intrinsic noise - because noise is dominated by base spreading resistance and emitter geometry, which are process-controlled and invariant across gain bins.

BCW61DE6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 32 V

Vce Saturation (Max) @ Ib, Ic:: 550mV @ 1.25mA, 50mA

Current - Collector Cutoff (Max):: 20nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 380 @ 2mA, 5V

Power - Max:: 330 mW

Frequency - Transition:: 250MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BCW61DE6327HTSA1 FAQ

1.How can I place an order for BCW61DE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCW61DE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCW61DE6327HTSA1 reliable?

The price and inventory of BCW61DE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCW61DE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BCW61DE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCW61DE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCW61DE6327HTSA1?

BCW61DE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCW61DE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCW61DE6327HTSA1?

For technical support, including BCW61DE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCW61DE6327HTSA1 requirements.

6.How does Aetrix verify that BCW61DE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BCW61DE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCW61DE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BCW61DE6327HTSA1?

All BCW61DE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCW61DE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCW61DE6327HTSA1 part is unused and in its original packaging.

Return procedure for BCW61DE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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