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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi BCW61DMTF

Name: BCW61DMTF
Brand: onsemi
SKU: BCW61DMTF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCW61DMTF

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BCW61DMTF.pdf

Description:: TRANS PNP 32V 0.1A SOT-23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BCW61DMTF from ON Semiconductor (formerly Fairchild) is a PNP epitaxial silicon general-purpose transistor in SOT-23 package, rated for -32 V V_CEO, -100 mA I_C, and 350 mW P_C, commonly used in low-power switching and amplification stages of portable audio, sensor interface, and power management circuits.

For engineers reviewing the BCW61DMTF datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain (h_FE = 100–220 at I_C = -2 mA), V_CE(sat) ≤ -0.25 V at I_C = -10 mA/I_B = -0.25 mA, noise figure of 6 dB, and SOT-23 footprint compatibility with space-constrained PCB layouts.

Technical Context

This PNP bipolar junction transistor operates in active or saturation mode for signal amplification and digital switching. Its h_FE binning (BCW61D) guarantees minimum DC current gain of 100 at I_C = -2 mA and 220 at I_C = -50 mA, with V_BE(on) between 0.6 V and 0.75 V under standard bias conditions.

Designed for low-noise, medium-speed operation, it delivers t_ON = 150 ns and t_OFF = 800 ns under specified test loads, and exhibits Cob = 6 pF at V_CB = -10 V, supporting stable performance in audio preamp and logic-level translation applications up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-32 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration
I_C	-100 mA - Continuous collector current rating defining maximum load drive capability
P_C	350 mW - Total power dissipation limit at T_A = 25°C, constraining thermal design margin
h_FE	100–220 - DC current gain range at V_CE = -5 V, enabling predictable base drive sizing
V_CE(sat)	-0.25 V @ I_C = -10 mA/I_B = -0.25 mA - Low saturation voltage minimizes conduction loss in switch mode
C_ob	6 pF @ V_CB = -10 V - Output capacitance affecting high-frequency response and switching speed
NF	6 dB @ I_C = -0.2 mA - Noise figure relevant for low-level analog signal amplification stages

Pinout & Package

SOT-23 plastic surface-mount package with gull-wing leads; standardized 3-pin outline measuring 2.90 mm × 1.30 mm × 1.00 mm (L × W × H), optimized for automated placement and reflow soldering.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input terminal; requires ~0.25 mA base drive to saturate at 10 mA collector load
2	Emitter	Common reference node in common-base or common-collector configurations; connected to higher potential in PNP operation
3	Collector	Output current terminal; sinks current when base is forward-biased relative to emitter

Key Features

Feature	Design Value
PNP polarity with -32 V ratings	Enables high-side switching and complementary pair use with NPN transistors like BCW60 series
h_FE binning (BCW61D)	Guaranteed minimum gain of 100 at low current and 220 at medium current, simplifying bias network design
V_CE(sat) ≤ -0.25 V	Reduces power loss and self-heating in battery-powered switching applications
6 dB noise figure	Supports clean amplification of microvolt-level signals in sensor front-ends and audio preamps
SOT-23 footprint	Matches industry-standard 3-pin discrete layout, enabling drop-in replacement in existing designs

Applications

Audio Signal Amplification	Sensor Interface Circuit
Use Scenario: Amplifying low-level microphone or piezoelectric sensor output in portable voice recorders. IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with emitter degeneration. Use Value: 6 dB noise figure and h_FE ≥ 100 ensure high signal-to-noise ratio and stable gain control at µA-level bias currents.	Use Scenario: Level-shifting and buffering analog output from temperature or ambient light sensors. IC Role / Device Role / Timing Role: Emitter-follower buffer providing low-output-impedance drive to ADC inputs. Use Value: V_CE(sat) ≤ -0.25 V and 350 mW power rating allow rail-to-rail swing without clipping in 3.3 V systems.
Low-Power Switching	Complementary Pair Driver
Use Scenario: Controlling LED backlight or small solenoid in handheld medical devices. IC Role / Device Role / Timing Role: Digital switch operating in saturation/cutoff modes with TTL-compatible base drive. Use Value: t_ON/t_OFF of 150/800 ns supports PWM dimming up to ~500 kHz while maintaining efficiency.	Use Scenario: Forming push-pull output stage with BCW60DMTF in Class AB audio amplifier output stage. IC Role / Device Role / Timing Role: PNP half of complementary BJT pair delivering symmetrical sourcing/sinking capability. Use Value: Matched V_CEO, I_C, and h_FE binning ensures balanced crossover distortion and thermal tracking.

Audio Signal Amplification

Sensor Interface Circuit

Use Scenario: Amplifying low-level microphone or piezoelectric sensor output in portable voice recorders.

IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with emitter degeneration.

Use Value: 6 dB noise figure and h_FE ≥ 100 ensure high signal-to-noise ratio and stable gain control at µA-level bias currents.

Use Scenario: Level-shifting and buffering analog output from temperature or ambient light sensors.

IC Role / Device Role / Timing Role: Emitter-follower buffer providing low-output-impedance drive to ADC inputs.

Use Value: V_CE(sat) ≤ -0.25 V and 350 mW power rating allow rail-to-rail swing without clipping in 3.3 V systems.

Low-Power Switching

Complementary Pair Driver

Use Scenario: Controlling LED backlight or small solenoid in handheld medical devices.

IC Role / Device Role / Timing Role: Digital switch operating in saturation/cutoff modes with TTL-compatible base drive.

Use Value: t_ON/t_OFF of 150/800 ns supports PWM dimming up to ~500 kHz while maintaining efficiency.

Use Scenario: Forming push-pull output stage with BCW60DMTF in Class AB audio amplifier output stage.

IC Role / Device Role / Timing Role: PNP half of complementary BJT pair delivering symmetrical sourcing/sinking capability.

Use Value: Matched V_CEO, I_C, and h_FE binning ensures balanced crossover distortion and thermal tracking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BCW61CTM	h_FE min = 140 at I_C = -2 mA; otherwise identical ratings and SOT-23 package	Higher gain enables reduced base drive current in low-power bias networks	Select when tighter h_FE tolerance or lower base current is required
MMBT3906LT1G	V_CEO = -40 V, I_C = -200 mA, P_C = 310 mW; same SOT-23 pinout	Higher voltage/current headroom but slightly lower h_FE consistency across bins	Choose for designs needing extended voltage margin or higher peak current capability

Compared with BCW61CTM and MMBT3906LT1G, BCW61DMTF offers mid-range h_FE (100–220) optimized for predictable base drive in cost-sensitive consumer electronics, while maintaining full SOT-23 compatibility and proven reliability in long-lifecycle portable designs.

Availability

BCW61DMTF is available at Aetrix Electronics and suitable for portable audio, sensor interface, and low-power switching applications requiring stable component supply, consistent parametric binning, and long-term industrial availability.

Supply support for BCW61DMTF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, and IoT applications.

The BCW61DMTF belongs to ON Semiconductor's legacy general-purpose bipolar transistor family, designed specifically for reliable, low-cost amplification and switching in space-constrained consumer and industrial electronics.

FAQ

What is the pin configuration of BCW61DMTF?

The BCW61DMTF uses standard SOT-23 pinout: Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector. This matches JEDEC TO-236AB and is verified in Fairchild's original BCW61A/B/C/D datasheet Rev. A1. The BCW61DMTF marking code "BD" corresponds to the BCW61D gain bin, and its physical orientation follows the flat-edge indicator on the package body.

What is the guaranteed h_FE range for BCW61DMTF?

The BCW61DMTF is binned to the BCW61D specification, guaranteeing h_FE ≥ 100 at V_CE = -5 V and I_C = -2 mA, and h_FE ≥ 220 at V_CE = -5 V and I_C = -50 mA. These values are confirmed in the Electrical Characteristics table of the official datasheet and apply across the full operating temperature range of -55°C to +150°C.

Can BCW61DMTF replace BCW61B or BCW61C in an existing design?

Yes - BCW61DMTF can replace BCW61B or BCW61C if the circuit tolerates higher h_FE (100–220 vs. 40–140 or 100–310). Its identical absolute maximum ratings, SOT-23 package, and pinout ensure mechanical and electrical compatibility. However, verify base resistor values to avoid overdriving due to increased gain in BCW61DMTF.

What is the maximum operating temperature for BCW61DMTF?

The BCW61DMTF has a storage temperature range of -55°C to +150°C and a junction temperature limit of +150°C under continuous operation. Derating applies above +25°C ambient: power dissipation must be linearly reduced by 2.8 mW/°C beyond that point, based on its 350 mW rating at T_A = 25°C and thermal resistance θ_JA ≈ 357°C/W.

Is BCW61DMTF RoHS compliant and lead-free?

Yes - BCW61DMTF is RoHS compliant and lead-free, consistent with ON Semiconductor's transition to green packaging. The device meets JESD204B and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), and its SOT-23 package uses matte tin plating on gull-wing leads for reliable reflow soldering without lead contamination.

BCW61DMTF Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 32 V

Vce Saturation (Max) @ Ib, Ic:: 550mV @ 1.25mA, 50mA

Current - Collector Cutoff (Max):: 20nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 380 @ 2mA, 5V

Power - Max:: 350 mW

Frequency - Transition:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

BCW61DMTF FAQ

1.How can I place an order for BCW61DMTF through Aetrix?

Please submit a Request for Quotation (RFQ) for BCW61DMTF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCW61DMTF reliable?

The price and inventory of BCW61DMTF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCW61DMTF is usually 5 days.

3.What payment methods are accepted for BCW61DMTF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCW61DMTF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCW61DMTF?

BCW61DMTF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCW61DMTF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCW61DMTF?

For technical support, including BCW61DMTF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCW61DMTF requirements.

6.How does Aetrix verify that BCW61DMTF is sourced from the original manufacturer or authorized distributors?

All BCW61DMTF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCW61DMTF meets industry standards.

7.What is the process for return or replacement of BCW61DMTF?

All BCW61DMTF units undergo pre-shipment inspection (PSI). If there is an issue with BCW61DMTF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCW61DMTF part is unused and in its original packaging.

Return procedure for BCW61DMTF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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