onsemi BCW65CLT1

Overview

BCW65CLT1 from onsemi is an NPN silicon general-purpose transistor in SOT-23 package, rated for V_CEO = 32 V, I_C = 800 mA, and h_FE = 80–630 (depending on operating point), with f_T = 100 MHz and V_CE(sat) ≤ 0.7 V at I_C = 500 mA. It serves as a medium-current switching or linear amplification device in power management and signal interface stages.

For engineers reviewing the BCW65CLT1 datasheet, pinout, applications, or equivalent options, key selection criteria include its guaranteed h_FE range at multiple bias points, thermal resistance of 417°C/W on alumina substrate, and Pb-free SOT-23 packaging suitable for automated assembly in space-constrained consumer and industrial PCBs.

Technical Context

This discrete NPN transistor operates in active, saturation, and cutoff regions with validated breakdown ratings: V_(BR)CEO = 32 V (I_C = 10 mA), V_(BR)CES = 60 V (I_C = 10 A), and V_(BR)EBO = 5.0 V (I_E = 10 A). Its small-signal performance includes f_T = 100 MHz and C_obo = 12 pF, supporting RF-coupled amplifier and high-speed switching use cases up to ~10 MHz.

Switching behavior is characterized by t_on ≤ 100 ns and t_off ≤ 400 ns under defined load (R_L = 150 Ω) and drive conditions (I_B1 = I_B2 = 15 mA), while noise figure is specified at 10 dB (V_CE = 5 V, I_C = 0.2 mA, R_S = 1 kΩ).

Key Specifications

Pinout & Package

SOT-23 (TO-236) plastic surface-mount package, case 318, style 6; 3-pin configuration with gull-wing leads, 1.3 mm body width, 2.9 mm length, and 1.0 mm height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with BCW65CLT1, BC847BLT1G offers tighter h_FE distribution at low current but cannot sustain 500 mA loads, while MMBT3904LT1G provides higher V_CEO headroom yet requires derating above 200 mA-making BCW65CLT1 uniquely balanced for medium-current, medium-voltage general-purpose use.

Availability

BCW65CLT1 is available at Aetrix Electronics and suitable for LED driver circuits, DC-DC converter switches, audio pre-amplifier stages, and signal level shifter designs requiring stable component supply and RoHS-compliant packaging.

Supply support for BCW65CLT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering discrete, analog, and logic solutions for automotive, industrial, and consumer markets.

The BCW65CLT1 belongs to onsemi's general-purpose bipolar transistor product line, designed for cost-sensitive, medium-current switching and amplification tasks where reliability, consistent gain, and thermal robustness are prioritized over ultra-high speed or precision matching.

FAQ

What is the maximum continuous collector current rating for BCW65CLT1?

The BCW65CLT1 has a maximum continuous collector current (I_C) rating of 800 mA at T_A = 25°C. This rating assumes proper PCB thermal management-specifically, mounting on an alumina substrate per datasheet Note 2. Derating is required above 25°C ambient, at 2.4 mW/°C. Exceeding this current risks thermal runaway or permanent degradation of the BCW65CLT1 junction.

Does BCW65CLT1 have a guaranteed minimum h_FE at 100 mA collector current?

Yes, the BCW65CLT1 guarantees a minimum h_FE of 80 when tested at I_C = 100 mA, V_CE = 10 V, and T_A = 25°C. This value is explicitly listed in the "ELECTRICAL CHARACTERISTICS" table under "DC Current Gain BCW65CLT1". It is distinct from the BCW65ALT1 variant, which specifies only 35 at the same condition.

What is the thermal resistance (R_JA) of BCW65CLT1 on an alumina substrate?

The BCW65CLT1 exhibits a thermal resistance (R_JA) of 417°C/W when mounted on a 0.4 × 0.3 × 0.024 inch (99.5% alumina) substrate at T_A = 25°C. This allows a maximum power dissipation of 300 mW under those conditions, as confirmed in the "THERMAL CHARACTERISTICS" section of the official BCW65ALT1/D datasheet covering BCW65CLT1.

Is BCW65CLT1 pin-compatible with BCW65ALT1?

Yes, BCW65CLT1 and BCW65ALT1 share identical SOT-23 package dimensions, pinout (Base–Emitter–Collector on pins 1–2–3), and mechanical markings per the "MARKING DIAGRAMS" and "PACKAGE DIMENSIONS" sections. Both are drop-in replacements electrically and physically, differing only in h_FE binning-BCW65CLT1 offers higher guaranteed gain across all test conditions.

What is the transition frequency (f_T) specification for BCW65CLT1?

The BCW65CLT1 has a minimum transition frequency (f_T) of 100 MHz, measured at I_C = 20 mA, V_CE = 10 V, and f = 100 MHz. This parameter is documented in the "SMALL-SIGNAL CHARACTERISTICS" table and confirms suitability for VHF amplification and fast-switching applications up to approximately one-tenth of f_T.