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Infineon Technologies BCW67AE6327

Part No.:
BCW67AE6327
Manufacturer:
Infineon Technologies
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBCW67AE6327.pdf
Description:
TRANS 32V 0.8A PG-SOT23-3-1
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:39,000

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Product details

Overview

BCW67AE6327 from Infineon Technologies is a PNP silicon small-signal transistor in SOT-23 package, rated for VCEO = 32 V, IC = 800 mA, and Ptot = 330 mW at TS ≤ 79 °C. It delivers high DC current gain (hFE = 35–630 depending on IC and grouping), low VCE(sat) (0.3–0.7 V), and fT = 200 MHz, making it suitable for general-purpose audio-frequency switching and amplification in compact power management stages.

For engineers reviewing the BCW67AE6327 datasheet, BCW67AE6327 pinout, BCW67AE6327 application, or BCW67AE6327 equivalent, key selection criteria include its AEC-Q101 qualification, RoHS-compliant SOT-23 footprint, complementary pairing with BCW66 NPN types, and verified thermal resistance (RthJS ≤ 215 K/W) for reliable operation in automotive and industrial ambient conditions.

Technical Context

This PNP bipolar junction transistor operates in linear and saturated switching modes with defined breakdown limits: V(BR)CEO = 32 V, V(BR)CBO = 45 V, and V(BR)EBO = 5 V. Its hFE varies significantly with collector current-ranging from min. 35 at IC = 100 µA to min. 250 at IC = 500 mA-enabling stable biasing across wide dynamic ranges.

AC performance is characterized by fT = 200 MHz (typ.) at IC = 50 mA, VCE = 5 V, and parasitic capacitances Ccb = 6 pF and Ceb = 60 pF, supporting moderate-frequency signal amplification while maintaining low input/output coupling in discrete gain blocks.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO32 V - Maximum safe collector-emitter voltage before avalanche in active mode
IC800 mA - Continuous DC collector current rating at TS ≤ 79 °C
hFE (IC = 100 mA)100–250 - Confirmed DC current gain range for mid-current switching applications
VCE(sat)0.3–0.7 V - Low saturation voltage enabling efficient switching with minimal conduction loss
fT200 MHz - Transition frequency supporting audio and low-RF amplification up to ~100 MHz
RthJS≤215 K/W - Junction-to-soldering-point thermal resistance for PCB-level thermal design
AEC-Q101Qualified - Meets stress test requirements for automotive electronic components

Pinout & Package

BCW67AE6327 is housed in a standard SOT-23 plastic surface-mount package with gull-wing leads, optimized for automated assembly and thermal dissipation on FR-4 PCBs. Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector - confirmed per Infineon's official marking layout and pin configuration table.

Pin/TerminalCircuit RoleDesign Meaning
1 (Base)Current-controlled input terminalAccepts base drive current (max 100 mA DC) to regulate collector-emitter conduction
2 (Emitter)Common reference node for PNP operationConnected to higher potential rail; provides return path for emitter current in sink configurations
3 (Collector)Output current terminalDelivers controlled load current up to 800 mA; polarity requires reverse-biased VCE for conduction

Key Features

FeatureDesign Value
High hFE at low ICMin. 35 at IC = 100 µA - Enables sensitive switching with minimal base drive in battery-powered sensors
Low VCE(sat)0.3 V typ. at IC = 100 mA, IB = 10 mA - Reduces power loss in high-duty-cycle switching regulators
Complementary pairingMatched with BCW66 NPN series - Allows direct substitution in push-pull, differential, and phase-splitter topologies
RoHS & AEC-Q101Pb-free SOT-23 package qualified per AEC-Q101 Rev D - Supports automotive-grade reliability without lead content

Applications

Automotive Door Module DriverIndustrial Sensor Signal Conditioning

Use Scenario: Driving small solenoids and LED indicators in vehicle door control units under 12 V supply.

IC Role / Device Role / Timing Role: PNP switch sinking load current from 12 V rail to ground via emitter-follower or common-emitter configuration.

Use Value: Low VCE(sat) minimizes heat generation during continuous indicator duty cycles; AEC-Q101 ensures lifetime reliability in temperature-cycled environments.

Use Scenario: Amplifying weak analog outputs (e.g., thermistor or bridge sensor) in programmable logic controller (PLC) input modules.

IC Role / Device Role / Timing Role: Discrete gain stage providing 20–40 dB of voltage amplification before ADC sampling.

Use Value: High hFE at IC = 100 µA enables stable biasing with high-impedance feedback networks; fT supports bandwidth up to 50 kHz.

Consumer Audio Pre-amplifier StagePower Supply Enable Switch

Use Scenario: Low-noise pre-amplification of microphone signals in portable voice recorders and headset interfaces.

IC Role / Device Role / Timing Role: Common-emitter amplifier biased in Class-A for linearity, operating at IC ≈ 1–5 mA.

Use Value: Low Ceb = 60 pF reduces Miller effect; high hFE simplifies bias network design and improves SNR over wide temperature range.

Use Scenario: Enabling/disabling auxiliary 5 V or 3.3 V rails in embedded systems using microcontroller GPIO.

IC Role / Device Role / Timing Role: High-side switch controlling VOUT by pulling enable line low through base resistor.

Use Value: Fast turn-on/turn-off (enabled by fT = 200 MHz) ensures clean power sequencing; 800 mA rating supports >500 mA downstream loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BCW67B E6327Higher hFE group (min. 50 at IC = 100 µA; min. 160 at IC = 100 mA)Better suited for low-base-drive circuits where gain consistency at mid-current is criticalSelect when tighter hFE tolerance or improved β stability across production lots is required
BC807-25 E6327Same SOT-23 package but lower VCEO = 45 V, higher hFE = 160–250 (IC = 100 mA), no AEC-Q101 qualificationPreferred for non-automotive consumer applications requiring higher gain and lower saturation voltageChoose for cost-sensitive industrial or consumer designs where automotive qualification is unnecessary

Compared with BCW67BE6327 and BC807-25E6327, BCW67AE6327 offers the lowest hFE baseline but maintains AEC-Q101 compliance and optimal VCE(sat) trade-off for robust 12 V automotive switching-making it ideal where predictable minimum gain and qualification outweigh peak performance needs.

Availability

BCW67AE6327 is available at Aetrix Electronics and suitable for automotive door modules, industrial sensor interfaces, consumer audio pre-amplifiers, and power supply enable circuits requiring stable component supply and long-term manufacturability.

Supply support for BCW67AE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BCW67AE6327 belongs to Infineon's BCW66/67/68 family of AEC-Q101-qualified PNP/NPN transistors designed specifically for high-reliability automotive body electronics and industrial control applications demanding stable gain, low saturation voltage, and thermal robustness.

FAQ

Is BCW67AE6327 pin-compatible with BCW66 series NPN transistors?

No-BCW67AE6327 is a PNP device with pinout Base–Emitter–Collector (1–2–3), while BCW66-series NPN transistors have identical SOT-23 physical layout but reversed polarity: their pinout is also Base–Emitter–Collector (1–2–3), meaning direct replacement requires circuit topology adjustment (e.g., swapping supply/reference connections). They are complementary, not pin-compatible.

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature (Tj) for BCW67AE6327 is 150 °C, as specified in Infineon's datasheet. Operation above this limit risks permanent degradation. Derating is required above TS = 79 °C, where total power dissipation must be reduced linearly to zero at 150 °C junction temperature.

Does BCW67AE6327 support pulsed operation beyond its DC ratings?

Yes-Infineon specifies permissible pulse load capability: peak collector current ICM = 1 A and peak base current IBM = 200 mA are allowed for pulse widths < 300 µs and duty cycle < 2%. This enables short-duration surge handling in motor driver or relay interface applications without exceeding thermal limits.

How does the "A" suffix in BCW67AE6327 relate to hFE grouping?

The "A" denotes hFE group A: min. 35 at IC = 100 µA, VCE = 10 V; min. 75 at IC = 10 mA, VCE = 1 V; and min. 35 at IC = 500 mA, VCE = 2 V. This is the lowest-gain bin in the BCW67 family, selected for applications prioritizing consistency and thermal stability over maximum β.

BCW67AE6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Bulk
Product Status:
Active
Transistor Type:
-
Current - Collector (Ic) (Max):
800 mA
Voltage - Collector Emitter Breakdown (Max):
32 V
Vce Saturation (Max) @ Ib, Ic:
700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 1V
Power - Max:
330 mW
Frequency - Transition:
200MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23-3-1

BCW67AE6327 FAQ

1.How can I place an order for BCW67AE6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCW67AE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCW67AE6327 reliable?

The price and inventory of BCW67AE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCW67AE6327 is usually 5 days.

3.What payment methods are accepted for BCW67AE6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCW67AE6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCW67AE6327?

BCW67AE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCW67AE6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCW67AE6327?

For technical support, including BCW67AE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCW67AE6327 requirements.

6.How does Aetrix verify that BCW67AE6327 is sourced from the original manufacturer or authorized distributors?

All BCW67AE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCW67AE6327 meets industry standards.

7.What is the process for return or replacement of BCW67AE6327?

All BCW67AE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BCW67AE6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCW67AE6327 part is unused and in its original packaging.

Return procedure for BCW67AE6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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