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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BCW70,215

Name: BCW70,215
Brand: Nexperia USA Inc.
SKU: BCW70,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCW70,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BCW70,215.pdf

Description:: TRANS PNP 45V 0.1A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BCW70,215 from NXP Semiconductors is a PNP general-purpose bipolar junction transistor in SOT23 package, rated for −45 V V_CEO, −100 mA I_C, and DC current gain (h_FE) of 215–500 at I_C = −2 mA. It serves as a low-power switching or small-signal amplification device in compact consumer and industrial control circuits.

For engineers reviewing the BCW70,215 datasheet, BCW70,215 pinout, BCW70,215 application, or BCW70,215 equivalent, key selection criteria include verified PNP polarity, SOT23 footprint compatibility, h_FE range at low collector current, V_CEsat ≤ −300 mV at I_C = −10 mA, and thermal resistance of 500 K/W on FR4 PCB.

Technical Context

This transistor operates in active or saturation mode with fixed PNP polarity and requires base-emitter forward biasing (V_BE ≈ −600 to −750 mV at I_C = −2 mA). Its f_T of 100 MHz supports audio-frequency amplification and low-speed digital switching up to ~10 MHz.

Thermal performance is defined for mounting on FR4 PCB (R_th(j-a) = 500 K/W); maximum junction temperature is 150 °C. Cut-off leakage (I_CBO ≤ −100 nA at 25 °C) ensures stable off-state behavior in battery-powered logic interfaces.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−45 V - Maximum safe collector-emitter voltage with base open; defines upper rail limit in PNP switch designs.
I_C (DC)	−100 mA - Continuous collector current rating; sets max load drive capability in linear or saturated operation.
h_FE	215–500 - DC current gain at I_C = −2 mA; determines required base drive for target collector current.
V_CEsat	−80 to −300 mV - Saturation voltage at I_C = −10 mA / I_B = −0.5 mA; impacts power loss and logic-level compatibility.
R_th(j-a)	500 K/W - Junction-to-ambient thermal resistance on FR4; dictates derating above 25 °C ambient.
f_T	100 MHz - Transition frequency at I_C = −10 mA; confirms suitability for audio and low-MHz signal amplification.

Pinout & Package

SOT23 plastic surface-mounted package (TO-236AB), 3-lead, dimensions per JEDEC outline: 2.9 × 1.3 × 1.0 mm (L × W × H), with 0.95 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; requires negative bias relative to emitter to turn on PNP device.
2	Emiter	Current source terminal; connected to higher potential rail in typical PNP switch configuration.
3	Collector	Current sink terminal; delivers controlled current to load referenced to lower potential (e.g., ground).

Key Features

Feature	Design Value
Low-voltage PNP structure	Rated for −45 V V_CEO; enables use in 3.3 V, 5 V, and 12 V rail-referenced switching.
High DC current gain	h_FE = 215–500 at I_C = −2 mA; reduces base drive requirements in low-power control stages.
Low saturation voltage	V_CEsat ≤ −300 mV at I_C = −10 mA; minimizes conduction loss in battery-operated load switches.
FR4-optimized thermal design	R_th(j-a) = 500 K/W; allows direct use on standard PCB without heatsink in <100 mW dissipation scenarios.

Applications

LED Driver Circuit

Microcontroller I/O Interface

Use Scenario: Driving 20 mA indicator LEDs from 3.3 V microcontroller GPIO pins via low-side PNP switch.

IC Role / Device Role / Timing Role: PNP transistor acts as high-side current source, sinking LED current to ground when base is pulled low.

Use Value: V_CEsat ≤ −300 mV ensures >3.0 V forward drop across LED at full brightness, preserving visibility under low supply conditions.

Use Scenario: Level-shifting and inverting logic signals between 5 V legacy peripherals and 3.3 V MCU inputs.

IC Role / Device Role / Timing Role: Discrete PNP inverter stage providing clean 0 V / 5 V output swing with h_FE-stabilized gain.

Use Value: h_FE ≥ 215 guarantees reliable switching margin even with ±15% base resistor tolerance and temperature drift.

Low-Power Sensor Biasing

Audio Pre-amplifier Stage

Use Scenario: Providing stable −2 mA bias current to PNP-based temperature sensor front-end in portable instrumentation.

IC Role / Device Role / Timing Role: Constant-current source configured with emitter resistor and base voltage divider.

Use Value: I_CBO ≤ −100 nA at 25 °C ensures negligible leakage-induced offset error in precision analog measurement paths.

Use Scenario: Single-stage common-emitter amplifier for electret microphone output in voice-recognition modules.

IC Role / Device Role / Timing Role: Small-signal PNP amplifier with capacitive coupling and emitter degeneration.

Use Value: f_T = 100 MHz supports flat frequency response up to 20 kHz with <1 dB gain variation, meeting audio fidelity requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BCW72,215	NPN complement; same SOT23 package, but opposite polarity and higher h_FE (250–630).	Requires circuit topology reversal (e.g., low-side vs. high-side switching); not drop-in compatible.	Select only when redesign permits NPN-based layout and base drive sourcing is available.
MMBT3906LT1G	Onsemi PNP SOT23; V_CEO = −40 V, h_FE = 100–300 at I_C = −10 mA, R_th(j-a) = 400 K/W.	Lower voltage rating and narrower h_FE spread; better thermal performance on FR4.	Prefer for cost-sensitive 3.3/5 V systems where −40 V margin suffices and tighter thermal control is needed.

Compared with BCW70,215, BCW72,215 enables NPN-centric designs with higher gain but mandates polarity-aware re-layout, while MMBT3906LT1G trades voltage headroom for improved thermal efficiency and broader industry availability.

Availability

BCW70,215 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller I/O interfaces, low-power sensor biasing, and audio pre-amplifier stages requiring stable component supply and consistent SOT23 footprint compliance.

Supply support for BCW70,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The BCW70,215 belongs to NXP's legacy discrete transistors product line, designed specifically for cost-effective, space-constrained general-purpose switching and amplification in consumer and industrial electronics.

FAQ

Is BCW70,215 RoHS compliant?

Yes, BCW70,215 meets RoHS Directive 2011/65/EU requirements. NXP confirmed full compliance in its 2004 product data sheet revision and subsequent material declarations. Lead-free soldering is supported up to peak reflow temperatures of 260 °C per J-STD-020.

What is the maximum safe operating temperature for BCW70,215?

The absolute maximum junction temperature (T_j) is 150 °C. Operation above this value risks permanent degradation. Derating begins at T_amb > 25 °C using R_th(j-a) = 500 K/W; at 75 °C ambient, maximum allowable P_tot drops to 150 mW.

Can BCW70,215 replace BCW69 in existing designs?

Yes, with verification. BCW70,215 has higher h_FE (215–500 vs. 120–260 for BCW69) and identical pinout, voltage, and current ratings. Ensure base resistor values are reviewed to avoid overdrive or unintended saturation in high-gain configurations.

Does BCW70,215 support pulsed operation beyond its DC ratings?

Yes - peak collector current (I_CM) is rated at −200 mA for pulses ≤300 μs with duty cycle ≤2%. This supports short-duration surge handling in relay drivers or pulse-width modulated LED dimming, provided average power remains within 250 mW.

BCW70,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 150mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 215 @ 2mA, 5V

Power - Max:: 250 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BCW70,215 FAQ

1.How can I place an order for BCW70,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCW70,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCW70,215 reliable?

The price and inventory of BCW70,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCW70,215 is usually 5 days.

3.What payment methods are accepted for BCW70,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCW70,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCW70,215?

BCW70,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCW70,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCW70,215?

For technical support, including BCW70,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCW70,215 requirements.

6.How does Aetrix verify that BCW70,215 is sourced from the original manufacturer or authorized distributors?

All BCW70,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCW70,215 meets industry standards.

7.What is the process for return or replacement of BCW70,215?

All BCW70,215 units undergo pre-shipment inspection (PSI). If there is an issue with BCW70,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCW70,215 part is unused and in its original packaging.

Return procedure for BCW70,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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