Infineon Technologies BCX5316H6433XTMA1

Overview

BCX5316H6433XTMA1 from Infineon Technologies is a PNP silicon bipolar junction transistor designed for audio frequency driver and output stages in linear and switching applications. It features V_CEO = 80 V, I_C = 1 A continuous, V_CE(sat) ≤ 0.5 V at I_C = 500 mA / I_B = 50 mA, h_FE = 100–250 (at I_C = 150 mA), and SOT-89 surface-mount package. It is RoHS-compliant and AEC-Q101 qualified for automotive-grade reliability.

For engineers reviewing the BCX5316H6433XTMA1 datasheet, BCX5316H6433XTMA1 pinout, BCX5316H6433XTMA1 application, or BCX5316H6433XTMA1 equivalent, key selection criteria include its high-voltage PNP capability, low saturation voltage under medium-current drive, thermal resistance (R_thJS ≤ 15 K/W), complementary NPN pairing with BCX56 series, and suitability for automotive power control circuits requiring robust SOA and temperature stability.

Technical Context

This device operates as a medium-power PNP BJT optimized for linear amplification and saturated switching in analog and mixed-signal systems. Its design supports stable DC current gain (h_FE) across I_C = 5 mA to 500 mA and maintains low V_CE(sat) even at elevated junction temperatures up to 150 °C.

The transistor exhibits f_T = 125 MHz (typ.) at I_C = 50 mA / V_CE = 10 V, enabling use in wideband AF amplifiers and fast-switching regulators. Its complementary NPN counterparts (e.g., BCX56-16) allow matched-pair push-pull configurations with symmetrical breakdown and gain characteristics.

Key Specifications

Pinout & Package

SOT-89 package: 3-pin surface-mount plastic case with exposed emitter tab for thermal and electrical connection. Standard footprint per Infineon outline drawing; pin 1 = Base, pin 2 = Collector, pin 3 = Emitter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Compared with BCX5316H6433XTMA1, BCX53-16TA offers identical performance in a different reel configuration, while MJD2955T4G trades miniaturization and automotive qualification for raw current capacity-making the original optimal for space-constrained, qualified automotive signal and power interfaces.

Availability

BCX5316H6433XTMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial relay interfaces, and audio amplifier output stages requiring stable component supply, AEC-Q101 compliance, and SOT-89 thermal performance.

Supply support for BCX5316H6433XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and discrete power devices, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's BCX5x family of AEC-Q101-qualified general-purpose PNP/NPN transistors, engineered for reliable linear and switching operation in automotive and industrial power interfaces.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The BCX5316H6433XTMA1 has a rated maximum junction temperature (T_j) of 150 °C. Operation at this limit requires strict thermal design: PCB copper area ≥ 250 mm² under the emitter tab, ambient ≤ 85 °C, and power dissipation ≤ 1.2 W. Derating is mandatory above 120 °C ambient per the P_tot vs. T_S curve in the datasheet.

Is this transistor suitable for switching 12 V automotive loads at 800 mA?

Yes. With I_C = 800 mA < 1 A rating and V_CE(sat) ≤ 0.5 V, conduction loss remains ≤ 0.4 W. Combined with R_thJS ≤ 15 K/W, junction temperature rise stays below 60 °C above ambient-well within safe operating area when mounted on ≥ 100 mm² 2-oz copper.

Does BCX5316H6433XTMA1 have built-in ESD protection?

No. This is a bare-die bipolar transistor without integrated ESD clamps. External protection (e.g., TVS diode on base line or RC snubber on collector) is required in environments with >2 kV HBM risk, especially in automotive harness-connected applications.

How does h_FE vary with collector current and temperature?

h_FE peaks near 150 mA (100–250), drops to ~63 at 5 mA, and falls to ~40 at 500 mA. At 150 °C, h_FE decreases by ~30% versus 25 °C values. These trends are confirmed in Figures 4 and 5 of the Infineon BCX51–BCX53 datasheet (EHP00440, EHP00437).