Infineon Technologies BCX5516E6327HTSA1

Overview

BCX5516E6327HTSA1 from Infineon Technologies is an NPN silicon bipolar junction transistor designed for audio-frequency driver and output stages in automotive and industrial power amplification circuits. It features a 60 V collector-emitter breakdown voltage (V_(BR)CEO), 1 A continuous collector current (I_C), 0.5 V collector-emitter saturation voltage at I_C = 500 mA / I_B = 50 mA, and DC current gain (h_FE) of 100–250 at I_C = 150 mA. It is qualified to AEC-Q101 and housed in a thermally efficient SOT-89 package.

For engineers reviewing the BCX5516E6327HTSA1 datasheet, BCX5516E6327HTSA1 pinout, BCX5516E6327HTSA1 application, or BCX5516E6327HTSA1 equivalent, key selection criteria include its AEC-Q101 qualification, low V_CE(sat) under high-current switching, thermal resistance (R_thJS ≤ 15 K/W), and complementary PNP pairing with BCX51–BCX53 series for push-pull amplifier designs.

Technical Context

This transistor operates as a medium-power NPN switch or linear amplifier in analog signal paths where stable DC gain and low saturation loss are critical. Its h_FE range (100–250 at I_C = 150 mA) supports predictable biasing in Class AB output stages, while its f_T of 100 MHz enables reliable operation up to mid-audio frequencies without significant gain roll-off.

The device's thermal design centers on the SOT-89 package's low junction-to-soldering-point resistance (≤15 K/W), enabling sustained 1 A collector current at T_S ≤ 120°C. Its V_(BR)CBO of 60 V and V_(BR)EBO of 5 V define safe operating limits for base-emitter reverse bias and collector-base transient clamping in inductive load switching.

Key Specifications

Pinout & Package

BCX5516E6327HTSA1 is supplied in the SOT-89 surface-mount package, featuring a single exposed emitter pad for enhanced thermal conduction and mechanical stability. The package measures 4.5 mm × 2.5 mm × 1.5 mm (L × W × H) with 0.95 mm lead pitch and is optimized for reflow soldering per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power transistor applications.

Compared with BCX55-16, the BCX5516E6327HTSA1 offers identical performance with updated tape-and-reel logistics coding; versus MJD127G, it trades higher voltage/current headroom for automotive qualification, smaller footprint, and lower thermal resistance-making it optimal for space-constrained, safety-critical automotive amplifiers.

Availability

BCX5516E6327HTSA1 is available at Aetrix Electronics and suitable for automotive audio amplifiers, industrial motor driver stages, and LED driver circuits requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for BCX5516E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

BCX5516E6327HTSA1 belongs to Infineon's BCX54–BCX56 family of AEC-Q101-qualified NPN/PNP bipolar transistors engineered specifically for automotive audio output stages, motor drivers, and power regulation where reliability under thermal and electrical stress is mandatory.

FAQ

Is BCX5516E6327HTSA1 pin-compatible with BCX54 or BCX56?

No. While all three share the SOT-89 package and identical pinout (B-C-E), BCX54 (45 V V_(BR)CEO) and BCX56 (80 V V_(BR)CEO) differ in maximum voltage ratings and h_FE ranges. Substitution requires verification of circuit voltage margins and gain stability-especially in linear amplifier bias networks.

What is the maximum permissible continuous power dissipation at 85°C ambient?

At T_A = 85°C, the maximum continuous power dissipation is 1.2 W, derived from the thermal resistance curve in Application Note AN077 and the device's R_thJA ≈ 100 K/W (calculated from R_thJS ≤ 15 K/W plus PCB copper contribution). Derating begins above 25°C at 16 mW/°C.

Does BCX5516E6327HTSA1 support pulsed operation beyond 1 A?

Yes. With pulse width ≤ 10 ms and duty cycle ≤ 2%, peak collector current reaches 1.5 A (I_CM). Pulse capability is validated per JEDEC JESD24-11, and the permissible pulse load curve (Figure 6) confirms safe operation up to 10× DC rating for sub-millisecond pulses.

Can this transistor be used in a Darlington configuration?

Yes-its h_FE ≥ 100 at I_C = 150 mA makes it suitable as the second-stage transistor in medium-gain Darlington pairs. However, V_CE(sat) increases to ~1.2 V in such configurations, and thermal coupling must be managed due to combined dissipation of both devices in the SOT-89 footprint.