Infineon Technologies BCX5610H6327XTSA1

Overview

BCX5610H6327XTSA1 from Infineon Technologies is an NPN silicon bipolar junction transistor designed for audio-frequency driver and output stages in automotive and industrial power amplifiers. It features 80 V collector-emitter breakdown voltage (V_(BR)CEO), 1 A continuous collector current (I_C), 0.5 V collector-emitter saturation voltage (V_CE(sat)) at I_C = 500 mA / I_B = 50 mA, and 100 MHz transition frequency (f_T). It is RoHS-compliant and qualified to AEC-Q101 for automotive use.

For engineers reviewing the BCX5610H6327XTSA1 datasheet, BCX5610H6327XTSA1 pinout, BCX5610H6327XTSA1 application, or BCX5610H6327XTSA1 equivalent, this part supports high-current linear amplification with low saturation loss and thermal stability up to 150 °C junction temperature - critical for compact, thermally constrained AF output stages.

Technical Context

This NPN transistor operates in linear (active) and saturated switching modes, with DC current gain (h_FE) ranging from 63 to 100 at I_C = 150 mA and V_CE = 2 V, and as low as 25 at I_C = 500 mA. Its f_T of 100 MHz enables stable operation in audio-band amplifiers up to ~20 kHz with sufficient gain margin.

The device uses a SOT-89 surface-mount package with thermal resistance R_thJS ≤ 15 K/W, enabling 2 W total power dissipation at T_S ≤ 120 °C. Its complementary PNP counterpart is BCX52 (not BCX51–BCX53 series-wide), confirmed by Infineon's marking and pinout alignment.

Key Specifications

Pinout & Package

SOT-89 package: 3-pin, single-ended surface-mount plastic case with exposed emitter pad for thermal conduction. Pin 1 = Base, Pin 2 = Collector (tab-connected), Pin 3 = Emitter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with BCX5610H6327XTSA1, the -16 variant trades broader h_FE tolerance for higher minimum gain, while ZTX653STZ sacrifices saturation efficiency for extended RF capability - both require revalidation of thermal and bias design.

Availability

BCX5610H6327XTSA1 is available at Aetrix Electronics and suitable for automotive audio amplifiers, industrial motor drivers, and LED constant-current supplies requiring stable component supply across multi-year production cycles.

Supply support for BCX5610H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BCX5610H6327XTSA1 belongs to Infineon's BCX54–BCX56 family of AEC-Q101-qualified NPN transistors engineered specifically for high-reliability linear amplification and switching in automotive power stages.

FAQ

Is BCX5610H6327XTSA1 pin-compatible with BCX56-16?

Yes - both share identical SOT-89 pinout (Base–Collector–Emitter), mechanical footprint, and thermal pad layout. The only difference is h_FE binning: BCX5610 specifies h_FE = 63–100, while BCX56-16 specifies 100–160. No PCB redesign is needed for substitution.

What is the maximum safe operating current at 100 °C ambient?

At T_A = 100 °C, derating per Infineon's P_tot vs. T_S curve limits continuous I_C to approximately 650 mA to maintain T_j ≤ 150 °C, assuming R_thJA ≈ 120 K/W on 2-layer FR4 with 1 cm² copper pour. Peak pulsed current remains 1.5 A for t_p ≤ 10 ms.

Can BCX5610H6327XTSA1 replace BC817 in a linear regulator?

Only with circuit revision: BCX5610 handles 1 A vs. BC817's 500 mA and has higher V_(BR)CEO (80 V vs. 45 V), but its SOT-89 package requires different thermal layout and larger base drive due to higher h_FE threshold. Direct drop-in replacement is not recommended without verifying bias network and heatsinking.

Does this transistor support PWM switching at 20 kHz?

Yes - with f_T = 100 MHz and t_f/t_r < 35 ns (inferred from datasheet curves), BCX5610H6327XTSA1 switches cleanly at 20 kHz with <5% duty-cycle distortion in class-D predriver roles, provided base drive strength exceeds 10 mA peak and layout minimizes Miller capacitance coupling.