onsemi BD13616STU

Overview

BD13616STU from Fairchild Semiconductor is a PNP epitaxial silicon transistor in TO-126 package, rated for -45 V V_CEO, -1.5 A continuous collector current, and 12.5 W case power dissipation at T_C=25°C, used in medium-power linear amplification and switching circuits such as audio output stages and relay drivers.

For engineers reviewing the BD13616STU datasheet, pinout, applications, or equivalent options, key selection criteria include its h_FE classification (16), V_CE(sat) of -0.5 V at I_C=-500 mA/I_B=-50 mA, complementary pairing with BD135, and safe operating area limitations under pulsed and DC conditions.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with defined DC current gain classes-BD13616STU corresponds to h_FE3 = 100–250 at V_CE = -2 V and I_C = -150 mA. Its safe operating area is constrained by secondary breakdown limits and thermal derating above 25°C case temperature.

The device features low V_BE(on) (-1.0 V at I_C = -0.5 A) and tight V_CEO(sus) matching (-45 V at I_C = -30 mA, I_B = 0), enabling reliable operation in grounded-emitter switching configurations without external snubbing in moderate-speed applications.

Key Specifications

Pinout & Package

BD13616STU is housed in a TO-126 plastic package with standard 3-pin configuration: emitter (pin 1), collector (pin 2), base (pin 3). The package provides mechanical robustness and thermal path to heatsink via the metal tab (collector-connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power transistor applications.

Compared with BD13616STU, BD136G offers identical performance with updated environmental compliance, while MJD13005 trades pin compatibility for higher voltage/current capability in non-drop-in applications requiring layout revision.

Availability

BD13616STU is available at Aetrix Electronics and suitable for audio amplifier output stages, relay driver circuits, and linear regulator pass elements requiring stable component supply and long-lifecycle support.

Supply support for BD13616STU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete devices before its acquisition by ON Semiconductor in 2016.

The BD13616STU belongs to Fairchild's legacy medium-power bipolar transistor family designed for cost-sensitive, thermally constrained linear and switching applications in industrial and consumer equipment.

FAQ

What is the h_FE classification of BD13616STU and how is it used in circuit design?

The BD13616STU is classified as h_FE3 = 100–250 at V_CE = -2 V and I_C = -150 mA. This guaranteed gain range allows designers to calculate precise base drive requirements for saturation or active-mode operation. For example, achieving full switch saturation at I_C = -1 A requires minimum I_B = -4 mA, ensuring reliable turn-on across temperature and unit variation. The BD13616STU's consistent h_FE simplifies bias network design in both linear and switching applications.

Is BD13616STU pin-compatible with BD135, and what does "complementary" mean here?

Yes, BD13616STU is pin-compatible with BD135 (its NPN counterpart) in TO-126 package, sharing identical pinout: emitter (1), collector (2), base (3). "Complementary" means they are engineered as matched pairs-same voltage ratings, gain ranges, and thermal characteristics-enabling symmetrical push-pull operation. This pairing reduces distortion in audio amplifiers and improves timing balance in H-bridge drivers, making BD13616STU and BD135 ideal for dual-rail analog and switching topologies.

What is the maximum continuous power dissipation for BD13616STU and how is it affected by temperature?

BD13616STU has P_C = 12.5 W at T_C = 25°C, but this derates linearly above that temperature at 100 mW/°C. At T_C = 75°C, maximum allowable dissipation drops to 7.5 W. Effective thermal design requires mounting the collector-tab to a heatsink with thermal resistance ≤ 2.0°C/W to maintain safe junction temperature. The BD13616STU's SOA curve confirms pulsed operation up to 3 A is permissible only with strict duty cycle and pulse width limits.

Can BD13616STU be used in switching power supplies, and what are its limitations?

BD13616STU is not optimized for high-frequency switching power supplies due to lack of specified transition frequency (f_T) and relatively slow storage time (~500 ns). It is suitable for low-frequency (<50 kHz) applications like linear regulator pass elements or relay drivers where switching speed is secondary to current/voltage capability. For SMPS use, designers should verify safe operating area under inductive switching stress and avoid operation near secondary breakdown limits. BD13616STU remains best suited for linear and medium-speed switching-not RF or resonant converter topologies.

What is the meaning of "16" in BD13616STU and how does it relate to h_FE?

The "16" in BD13616STU denotes its h_FE classification group per Fairchild's binning scheme: h_FE3 = 100–250 at V_CE = -2 V and I_C = -150 mA. This suffix distinguishes it from BD13606STU (h_FE3 = 40–100) and BD13610STU (h_FE3 = 63–160). The BD13616STU's higher gain band ensures tighter bias control in precision amplifier stages and more margin in saturated switching, directly impacting base drive simplicity and thermal stability in production designs.