onsemi BD136G

Overview

BD136G from onsemi is a PNP epitaxial silicon transistor in the BD136 series, rated for −45 V V_CEO, −1.5 A continuous collector current, and 12.5 W collector dissipation at T_C = 25°C; used as a medium-power switching or linear amplifier device in complementary pair configurations with BD135.

For engineers reviewing the BD136G datasheet, pinout, applications, or equivalent options, key selection considerations include its TO−126 package, −45 V breakdown rating, h_FE range of 25–160 (depending on I_C), V_CE(sat) ≤ −0.5 V at I_C = 500 mA/I_B = 50 mA, and Pb-free compliance per J-STD-609.

Technical Context

The BD136G operates as a general-purpose PNP bipolar junction transistor with fixed-emitter biasing capability and DC current gain specified across three test conditions: h_FE1 ≥ 25 at I_C = −5 mA, h_FE2 = 63–250 at I_C = −150 mA, and h_FE3 ≥ 25 at I_C = −500 mA. Its safe operating area supports pulsed currents up to −3.0 A with 2% duty cycle.

Thermal derating begins at T_C > 25°C, reducing maximum power dissipation linearly to zero at 175°C case temperature. Junction-to-case thermal resistance is implied by the 12.5 W rating at 25°C and 1.25 W at ambient, confirming suitability for heatsink-mounted operation in discrete power stages.

Key Specifications

Pinout & Package

BD136G is housed in a TO−126 (Case 340AS) thermally enhanced plastic package with 3 leads: Emitter (Lead 1), Collector (Lead 2), Base (Lead 3), mounted with collector tab electrically connected to lead 2 and intended for heatsink attachment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power transistor applications.

Compared with MJD130G and BD175, BD136G offers optimized cost-performance balance for through-hole medium-power linear and switching roles where −45 V/−1.5 A ratings and TO-126 thermal performance meet system requirements without over-specifying voltage or current headroom.

Availability

BD136G is available at Aetrix Electronics and suitable for audio amplifiers, DC motor drivers, linear voltage regulators, and relay interfaces requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BD136G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient technologies for automotive, industrial, cloud, and IoT applications.

The BD136G belongs to the BD136 Series of general-purpose PNP transistors designed for cost-sensitive, medium-power linear and switching applications in consumer and industrial equipment.

FAQ

What is the maximum continuous collector current rating for BD136G?

The BD136G has a maximum continuous collector current (I_C) rating of −1.5 A at case temperature T_C = 25°C. This rating decreases with rising case temperature per the derating curve in Figure 5, reaching zero at 175°C. Operation above this current without forced cooling or reduced duty cycle risks thermal runaway and permanent damage to the BD136G.

Is BD136G pin-compatible with BD135?

No, BD136G is not pin-compatible with BD135. While BD136G (PNP) and BD135 (NPN) are complementary devices intended for use together in push-pull circuits, they have opposite polarity and different internal doping structures. Their pinouts differ: BD136G uses Emitter–Collector–Base (ECB) order in TO-126, whereas BD135 uses Collector–Emitter–Base (CEB). Physical substitution without circuit redesign will cause functional failure of the BD136G.

Does BD136G require a heatsink in normal operation?

Yes, BD136G requires a heatsink for operation above ~250 mW power dissipation. With a maximum P_C of 12.5 W at T_C = 25°C, even moderate loads (e.g., I_C = −1 A, V_CE = −2 V) generate 2 W - exceeding the 1.25 W ambient-rated dissipation. Mounting the BD136G's collector tab to an appropriately sized aluminum heatsink maintains safe junction temperature and ensures long-term reliability of the BD136G.

What is the typical DC current gain (h_FE) of BD136G at 150 mA collector current?

The BD136G exhibits h_FE between 63 and 250 at V_CE = −2 V and I_C = −150 mA, depending on the specific variant (e.g., BD13610S vs. BD13616S). This wide range reflects process variation and must be accounted for in base drive design; worst-case h_FE = 63 governs minimum base current needed to saturate the BD136G under load.

Can BD136G be used in place of BD138G or BD140G?

No - BD136G is not interchangeable with BD138G or BD140G. Although all three belong to the same series and share TO-126 packaging and pinout, their voltage ratings differ: BD136G is rated for −45 V V_CEO, BD138G for −60 V, and BD140G for −80 V. Substituting BD136G in a circuit designed for higher breakdown voltage risks premature avalanche failure and catastrophic failure of the BD136G.