onsemi BD13710S

Overview

BD13710S from Fairchild Semiconductor is an NPN epitaxial silicon transistor in TO-126 package, rated for 60 V V_CEO, 1.5 A DC collector current, and 12.5 W collector dissipation at T_C = 25°C, used in medium-power linear amplification and switching applications such as audio output stages and power supply regulators.

For engineers reviewing the BD13710S datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO/V_CBO rating, hFE classification (63–160), saturation voltage at 500 mA/50 mA drive, thermal derating behavior, and complementary pairing with BD138.

Technical Context

The BD13710S operates as a medium-power bipolar junction transistor with fixed-emitter configuration and DC current gain binned per hFE3 classification (63–160 at V_CE = 2 V, I_C = 150 mA). It supports continuous and pulsed collector currents up to 1.5 A and 3.0 A respectively, with V_CE(sat) ≤ 0.5 V under specified drive conditions.

Thermal performance is defined by two dissipation limits: 12.5 W at case temperature 25°C and 1.25 W at ambient 25°C, requiring heatsinking for sustained operation. Junction temperature is rated to 150°C, and storage range spans –55°C to +150°C.

Key Specifications

Pinout & Package

BD13710S uses the TO-126 package: molded plastic case with metal tab (collector-connected), 3-pin through-hole configuration, 16.10 mm × 13.06 mm footprint, 14.20 mm max height, and integral heatsink mounting surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power transistor applications.

Compared with BD13710S, BD137G offers identical performance with RoHS compliance, while MJE13003 trades gain consistency and package compatibility for higher voltage and power headroom-making BD13710S optimal for cost-sensitive, thermally constrained medium-power linear and switching roles where hFE matching matters.

Availability

BD13710S is available at Aetrix Electronics and suitable for audio amplifiers, DC motor drivers, linear voltage regulators, and low-frequency switch-mode power supplies requiring stable component supply and consistent hFE binning across production lots.

Supply support for BD13710S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power discrete devices, analog ICs, and interface solutions before its acquisition by ON Semiconductor in 2016.

The BD13710S belongs to Fairchild's BD135/137/139 family of medium-power NPN transistors designed for linear amplification and switching in consumer, industrial, and power supply applications where reliability, thermal performance, and complementary pairing are essential.

FAQ

What is the maximum collector-emitter voltage rating for BD13710S?

The BD13710S has a maximum collector-emitter voltage (V_CEO) rating of 60 V at T_C = 25°C. This rating defines the upper limit of voltage the transistor can block in common-emitter configuration before entering avalanche breakdown. Exceeding this value risks permanent damage, especially under inductive load conditions without clamping.

Is BD13710S pin-compatible with BD135 or BD139?

Yes, BD13710S shares identical TO-126 pinout (Emitter–Collector–Base) and mechanical dimensions with BD135 and BD139. However, it differs electrically: BD135 is rated for 45 V, BD13710S for 60 V, and BD139 for 80 V. Substitution requires verifying that the lower-voltage BD135 meets system requirements-or that the higher-voltage BD139 does not compromise gain or switching speed.

What is the hFE classification range for BD13710S?

The BD13710S is classified under hFE3, with a guaranteed DC current gain range of 63 to 160 measured at V_CE = 2 V and I_C = 150 mA. This binning enables predictable biasing in amplifier designs and facilitates matched-pair selection when used alongside BD138 in complementary configurations.

Can BD13710S be used without a heatsink?

BD13710S can operate without a heatsink only at very low power levels-specifically, when its ambient-temperature-limited dissipation (1.25 W at T_A = 25°C) is not exceeded. For any application drawing >300 mA continuously or generating >1 W, a heatsink mounted to the metal tab is mandatory to maintain junction temperature below 150°C and ensure long-term reliability.

What is the complementary PNP transistor for BD13710S?

The complementary PNP transistor for BD13710S is the BD138, which shares the same TO-126 package, pinout (Emitter–Collector–Base), and thermal specifications. BD138 is rated for –60 V V_CEO and –1.5 A I_C, enabling direct pairing in push-pull amplifiers, H-bridge drivers, and other balanced topologies requiring matched NPN/PNP characteristics.