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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi BD1376S

Name: BD1376S
Brand: onsemi
SKU: BD1376S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BD1376S

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-225AA, TO-126-3

Datasheet:: BD1376S.pdf

Description:: TRANS NPN 60V 1.5A TO-126-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BD1376S from Fairchild Semiconductor is an NPN epitaxial silicon transistor in TO-126 package, rated for 60 V V_CEO, 1.5 A DC collector current, and 12.5 W collector dissipation at T_C = 25°C, used in medium-power linear amplification and switching applications such as audio output stages and relay drivers.

For engineers reviewing the BD1376S datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO/V_CBO rating, hFE classification (63–160), saturation voltage at 500 mA/50 mA drive, thermal derating behavior, and complementary pairing with BD138.

Technical Context

This device operates as a medium-power bipolar junction transistor optimized for linear and switching use where moderate voltage headroom and stable DC gain are required. Its hFE is specified across three test conditions-25–250 at IC = 5 mA, 25–160 at IC = 0.5 A, and 63–160 for BD137-classified units-enabling predictable biasing in Class AB audio stages and saturated-switching loads.

The BD1376S features low V_CE(sat) of 0.5 V at IC = 500 mA / IB = 50 mA and V_BE(on) of 1.0 V under same conditions, supporting efficient base drive design. Its safe operating area (SOA) is defined up to 100 V and 1 A in DC mode, with pulsed IC limit of 3.0 A, making it suitable for intermittent load control without secondary breakdown concerns.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum continuous collector-emitter voltage before breakdown; sets usable supply rail limit in switching designs.
I_C (DC)	1.5 A - Continuous collector current capability; defines maximum steady-state load current handling.
P_C (T_C=25°C)	12.5 W - Thermal power limit at case temperature 25°C; determines heatsink requirement for linear operation.
hFE (BD137 class)	63–160 - DC current gain range at V_CE = 2 V, I_C = 150 mA; enables stable bias point selection in amplifier circuits.
V_CE(sat)	0.5 V @ I_C = 500 mA, I_B = 50 mA - Low saturation voltage ensures minimal conduction loss in switch-mode applications.
T_J max	150 °C - Maximum junction temperature; constrains thermal design margin and reliability under sustained load.

Pinout & Package

BD1376S is housed in a TO-126 plastic package with standard lead configuration: Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base. The package provides mechanical robustness and thermal path via the metal tab (Collector-connected) for heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current exit node for majority carriers	Connected to ground or low-side return path; requires low-impedance trace for stability in high-gain stages.
2 (Collector)	Current entry node; electrically tied to metal tab	Tab must be isolated from chassis unless circuit ground reference permits; primary thermal conduction path to heatsink.
3 (Base)	Control terminal for minority carrier injection	Driven by current-limited source; requires series resistor to limit I_B ≤ 0.5 A per absolute max rating.

Key Features

Feature	Design Value
Complementary pairing	Designed as NPN counterpart to BD138 PNP, enabling matched push-pull output stages with symmetrical gain and thermal tracking.
Medium-power SOA	DC safe operating area extends to 60 V × 1 A, supporting reliable operation in unregulated power amplifier outputs and motor driver half-bridges.
Controlled hFE spread	Classified hFE3 bin (63–160) reduces unit-to-unit variation in bias-sensitive linear circuits without requiring emitter degeneration.
Thermal derating curve	Linear power derating from 12.5 W at 25°C case temperature to zero at 150°C, enabling precise heatsink sizing for industrial ambient conditions.

Applications

Audio Power Amplifier Output Stage	DC Motor Speed Control
Use Scenario: Final output stage in 5–15 W Class AB audio amplifiers driving 4–8 Ω speakers. IC Role / Device Role / Timing Role: NPN output transistor delivering amplified current to speaker load; paired with BD138 for complementary symmetry. Use Value: 60 V V_CEO supports ±24 V rails; 1.5 A I_C handles peak speaker currents; low V_CE(sat) minimizes crossover distortion and heat generation.	Use Scenario: High-side or low-side switch controlling brushed DC motors up to 24 V, 1 A nominal load. IC Role / Device Role / Timing Role: Saturated-switch BJT driven by microcontroller GPIO through base resistor; used in H-bridge half-legs or single-direction drivers. Use Value: 0.5 V V_CE(sat) at 500 mA limits conduction loss to <0.25 W; TO-126 tab enables direct heatsinking for intermittent duty cycles.
Relay Driver Circuit	Linear Voltage Regulator Pass Element
Use Scenario: Driving 12 V/24 V electromagnetic relays with coil resistance 100–500 Ω in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Switching transistor providing full coil current (≈50–120 mA) with fast turn-on/turn-off controlled by logic-level signal. Use Value: hFE ≥63 ensures sufficient gain for direct GPIO drive; 5 V V_EBO withstands flyback spikes when snubbed with freewheeling diode.	Use Scenario: Series pass element in adjustable linear regulators delivering up to 1 A at 5–12 V output with input up to 30 V. IC Role / Device Role / Timing Role: Current-controlled pass transistor dissipating excess voltage as heat; biased via error amplifier and current-limit circuitry. Use Value: 12.5 W P_C at T_C = 25°C allows >5 W continuous dissipation with modest heatsink; 150 °C T_J max supports operation in enclosed enclosures.

Audio Power Amplifier Output Stage

DC Motor Speed Control

Use Scenario: Final output stage in 5–15 W Class AB audio amplifiers driving 4–8 Ω speakers.

IC Role / Device Role / Timing Role: NPN output transistor delivering amplified current to speaker load; paired with BD138 for complementary symmetry.

Use Value: 60 V V_CEO supports ±24 V rails; 1.5 A I_C handles peak speaker currents; low V_CE(sat) minimizes crossover distortion and heat generation.

Use Scenario: High-side or low-side switch controlling brushed DC motors up to 24 V, 1 A nominal load.

IC Role / Device Role / Timing Role: Saturated-switch BJT driven by microcontroller GPIO through base resistor; used in H-bridge half-legs or single-direction drivers.

Use Value: 0.5 V V_CE(sat) at 500 mA limits conduction loss to <0.25 W; TO-126 tab enables direct heatsinking for intermittent duty cycles.

Relay Driver Circuit

Linear Voltage Regulator Pass Element

Use Scenario: Driving 12 V/24 V electromagnetic relays with coil resistance 100–500 Ω in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Switching transistor providing full coil current (≈50–120 mA) with fast turn-on/turn-off controlled by logic-level signal.

Use Value: hFE ≥63 ensures sufficient gain for direct GPIO drive; 5 V V_EBO withstands flyback spikes when snubbed with freewheeling diode.

Use Scenario: Series pass element in adjustable linear regulators delivering up to 1 A at 5–12 V output with input up to 30 V.

IC Role / Device Role / Timing Role: Current-controlled pass transistor dissipating excess voltage as heat; biased via error amplifier and current-limit circuitry.

Use Value: 12.5 W P_C at T_C = 25°C allows >5 W continuous dissipation with modest heatsink; 150 °C T_J max supports operation in enclosed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BD137G	Same electrical specs and TO-126 package; RoHS-compliant variant with green molding compound.	No functional difference; identical pinout and thermal profile; preferred for new designs requiring lead-free compliance.	Select BD137G for RoHS-conforming production; BD1376S remains valid for legacy repair or non-RoHS environments.
MJD13005	Higher V_CEO (80 V), higher I_C (2.0 A), but wider hFE spread (20–200); TO-220 package with different pinout and thermal interface.	Not drop-in: requires PCB layout change and revised base drive due to higher gain variability and larger footprint.	Choose MJD13005 only when 80 V rating or 2 A current is mandatory; verify SOA and thermal interface compatibility.

Compared with BD1376S, BD137G offers identical performance with RoHS compliance, while MJD13005 trades pin compatibility for higher voltage/current ratings and less predictable gain-making BD1376S optimal for cost-sensitive, space-constrained, and gain-stable medium-power designs.

Availability

BD1376S is available at Aetrix Electronics and suitable for audio amplifier output stages, relay driver circuits, and linear regulator pass elements requiring stable component supply and long-term industrial availability.

Supply support for BD1376S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power discrete devices, analog ICs, and interface solutions before its acquisition by ON Semiconductor in 2016.

The BD1376S belongs to Fairchild's BD135/137/139 family of medium-power NPN transistors designed specifically for linear amplification and robust switching in industrial and consumer audio systems.

FAQ

What is the maximum collector-emitter voltage rating for BD1376S?

The BD1376S has a maximum collector-emitter voltage (V_CEO) rating of 60 V at T_C = 25°C. This value is confirmed in the Absolute Maximum Ratings table and applies under DC conditions with proper heatsinking. Exceeding this voltage risks avalanche breakdown and permanent device failure, so design margins should maintain at least 20% derating in noisy or inductive load environments. The BD1376S datasheet specifies no derating curve beyond 25°C case temperature for V_CEO.

Is BD1376S pin-compatible with BD137 or BD139?

Yes, BD1376S is pin-compatible with BD137 and BD139, sharing identical TO-126 package dimensions and terminal assignment (Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base). However, V_CEO and V_CBO differ: BD1376S matches BD137 at 60 V, whereas BD139 is rated for 80 V. Substituting BD1376S for BD139 requires verifying that 60 V headroom suffices for the target application's peak voltage transients.

What is the hFE classification range for BD1376S?

The BD1376S is classified under hFE3 with a guaranteed range of 63 to 160 when measured at V_CE = 2 V and I_C = 150 mA. This binning ensures tighter gain consistency than the broader hFE1 (25–250) or hFE2 (25–160) categories, making BD1376S especially suitable for bias-critical linear amplifier designs where predictable quiescent current is essential.

Can BD1376S be used as a direct replacement for BD137 in existing designs?

Yes, BD1376S is functionally and mechanically identical to BD137, including matching V_CEO, V_CBO, I_C, P_C, and TO-126 pinout. The "6S" suffix denotes a specific manufacturing lot or packaging variant-not a parametric revision-so no circuit redesign or layout change is needed when replacing BD137 with BD1376S in legacy systems or repair scenarios.

What thermal considerations apply to BD1376S in linear regulator applications?

In linear regulator use, BD1376S must dissipate (V_IN − V_OUT) × I_LOAD as heat. With 12.5 W maximum dissipation at T_C = 25°C and 150 °C maximum junction temperature, thermal resistance from junction-to-case is approximately 10 °C/W. To sustain 5 W dissipation, the heatsink must maintain case temperature ≤75°C-requiring a thermal resistance of ≤15 °C/W from case to ambient, assuming 25°C ambient and adequate airflow.

BD1376S Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-225AA, TO-126-3

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1.5 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 150mA, 2V

Power - Max:: 1.25 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-126-3

BD1376S FAQ

1.How can I place an order for BD1376S through Aetrix?

Please submit a Request for Quotation (RFQ) for BD1376S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BD1376S reliable?

The price and inventory of BD1376S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BD1376S is usually 5 days.

3.What payment methods are accepted for BD1376S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BD1376S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BD1376S?

BD1376S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BD1376S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BD1376S?

For technical support, including BD1376S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BD1376S requirements.

6.How does Aetrix verify that BD1376S is sourced from the original manufacturer or authorized distributors?

All BD1376S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BD1376S meets industry standards.

7.What is the process for return or replacement of BD1376S?

All BD1376S units undergo pre-shipment inspection (PSI). If there is an issue with BD1376S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BD1376S part is unused and in its original packaging.

Return procedure for BD1376S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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