onsemi BD13810S

Overview

BD13810S from Fairchild Semiconductor is a PNP epitaxial silicon transistor designed for medium-power linear amplification and switching applications, with V_CEO = −60 V, I_C = −1.5 A (DC), h_FE = 63–160 at I_C = −150 mA, V_CE(sat) = −0.5 V (I_C = −500 mA, I_B = −50 mA), and TO-126 package. It serves as a complement to BD137 in audio output stages and power control circuits.

For engineers reviewing the BD13810S datasheet, pinout, applications, or equivalent options, key selection criteria include its −60 V V_CEO, −1.5 A continuous collector current, h_FE classification band (10), TO-126 thermal performance (12.5 W at T_C = 25°C), and verified PNP switching linearity in industrial driver designs.

Technical Context

This PNP bipolar junction transistor operates with fixed-base drive in saturated switching or Class-A/AB linear modes. Its h_FE classification "10" corresponds to 63–160 gain at I_C = −150 mA, V_CE = −2 V, enabling predictable current amplification in emitter-follower and series-pass configurations.

The device features low V_CE(sat) (−0.5 V) under forced β = 10 biasing and supports pulsed operation up to −3.0 A (350 µs, 2% duty). Thermal derating begins at T_C > 25°C, with 0.1 W/°C reduction in P_C above that point, per the published power derating curve.

Key Specifications

Pinout & Package

BD13810S is housed in a TO-126 plastic package with integral heat slug, featuring three leads: Emitter (pin 1), Collector (pin 2), Base (pin 3). The case is electrically connected to the collector terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power transistor applications.

Compared with MJD127G and BC639, BD13810S offers optimal balance of −60 V rating, −1.5 A DC current, guaranteed h_FE band, and TO-126 thermal efficiency-making it preferred for industrial linear and switching designs where gain consistency and package thermal interface are critical.

Availability

BD13810S is available at Aetrix Electronics and suitable for audio amplifier output stages, DC motor directional drivers, and linear voltage regulator pass elements requiring stable component supply, long-lifecycle availability, and traceable manufacturing origin.

Supply support for BD13810S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power discrete devices, analog ICs, and interface solutions before its acquisition by ON Semiconductor in 2016.

BD13810S belongs to the BD136/138/140 family of medium-power PNP transistors engineered for robust linear amplification and switching in industrial, audio, and power control systems.

FAQ

What is the hFE classification band for BD13810S and how is it used in circuit design?

The BD13810S carries h_FE classification "10", meaning its DC current gain falls within 63–160 at I_C = −150 mA and V_CE = −2 V. This band allows designers to select appropriate base resistors for predictable saturation or active-mode biasing without gain-related instability. In BD13810S applications like audio output stages, this classification ensures consistent quiescent current across units, reducing calibration effort and thermal mismatch.

Is BD13810S pin-compatible with BD136 or BD140?

Yes-BD13810S shares identical TO-126 pinout (Emitter–Collector–Base) and mechanical dimensions with BD136 and BD140. However, electrical ratings differ: BD13810S has V_CEO = −60 V (vs. −45 V for BD136, −80 V for BD140), so substitution requires verification of voltage margin. BD13810S is not a drop-in replacement without checking circuit stress conditions.

What is the maximum allowable collector dissipation for BD13810S at 75°C case temperature?

Per the published power derating curve, BD13810S has a linear derating factor of 0.1 W/°C above T_C = 25°C. At T_C = 75°C, allowable P_C = 12.5 W − (75 − 25) × 0.1 W = 7.5 W. This value must be respected in BD13810S thermal design to avoid exceeding 150 °C junction temperature, especially in sealed enclosures or high ambient environments.

Can BD13810S be used in avalanche mode for snubber circuits?

No-BD13810S is not characterized or rated for controlled avalanche operation. Its V_CEO(sus) = −60 V is specified under I_C = −30 mA, IB = 0, but the datasheet does not guarantee ruggedness or energy absorption capability during repetitive avalanche events. For snubber use, a specifically rated avalanche transistor such as the FZT795 should be selected instead of BD13810S.

Does BD13810S have a documented complementary NPN part, and what is its designation?

Yes-BD13810S is explicitly designated as the PNP complement to BD137 (NPN), per the "Complement to BD135, BD137 and BD139 respectively" statement in the Applications section. BD137 shares matching V_CEO, I_C, and TO-126 packaging, enabling matched push-pull pairs in audio and power amplifier designs using BD13810S and BD137 together.