onsemi BD17610STU

Overview

BD17610STU from Fairchild Semiconductor is a PNP epitaxial silicon transistor in TO-126 package, rated for -45 V V_CEO, -3 A DC collector current, 30 W power dissipation at T_C=25°C, h_FE of 40–100 (Class 6), and V_CE(sat) = -0.8 V at I_C = -1 A / I_B = -0.1 A, used in medium-power linear amplification and switching circuits such as audio output stages and relay drivers.

For engineers reviewing the BD17610STU datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, TO-126 thermal performance (R_θJC = 8.5°C/W), safe operating area under pulsed conditions (I_C(pulse) = -7 A), V_CEO(sus) = -45 V, and h_FE classification consistency across production lots.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor with fixed emitter-base and collector-base junction structures optimized for linear gain stability and switching robustness. Its h_FE range (40–100) and low saturation voltage (-0.8 V) support reliable current amplification in Class AB audio stages and controlled turn-on in inductive load drivers.

The BD17610STU exhibits defined thermal limits: R_θJC = 8.5°C/W enables effective heatsink coupling, while R_θJA = 70°C/W reflects ambient-limited operation without forced cooling. Junction temperature must not exceed 150°C, and storage range spans -65°C to +150°C.

Key Specifications

Pinout & Package

BD17610STU is housed in a TO-126 plastic package with integral metal tab for mechanical mounting and thermal conduction. The case is electrically connected to the collector terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power transistor applications.

Compared with MJD176 and BD176G, BD17610STU offers proven through-hole reliability and legacy design continuity, while trading off thermal efficiency for mechanical robustness and ease of prototyping-making it optimal for industrial control boards and repair replacements where TO-126 footprint and long-term component availability are prioritized.

Availability

BD17610STU is available at Aetrix Electronics and suitable for industrial motor controls, audio power amplifiers, relay driver modules, and linear regulator designs requiring stable component supply with full traceability and long-lifecycle support.

Supply support for BD17610STU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor manufacturer specializing in analog, discrete, and power IC solutions before its acquisition by ON Semiconductor in 2016.

The BD17610STU belongs to Fairchild's legacy medium-power bipolar transistor family, designed specifically for cost-sensitive, thermally demanding linear and switching applications in industrial and consumer equipment.

FAQ

What is the maximum continuous collector current rating for BD17610STU?

The BD17610STU has a maximum continuous collector current (I_C) rating of -3 A at T_C = 25°C. This rating assumes proper heatsinking and derating per the power derating curve in the datasheet. At elevated case temperatures, the allowable current decreases linearly-e.g., at T_C = 100°C, the practical limit drops to approximately -1.8 A. Exceeding this rating risks thermal runaway or permanent junction damage.

Is BD17610STU pin-compatible with BD175 or other complementary NPN transistors?

BD17610STU is functionally complementary to BD175 but not pin-compatible: BD17610STU (PNP) uses Emitter–Collector–Base pinout (1–2–3), whereas BD175 (NPN) uses Emitter–Collector–Base in reverse order (1–2–3 maps to E–C–B for BD175, but C–E–B for BD17610STU). Physical layout requires mirrored PCB footprints. Always verify pin assignments using the official TO-126 mechanical drawing before board design.

What is the guaranteed h_FE range for BD17610STU at typical operating conditions?

The BD17610STU is classified as h_FE Class 6, guaranteeing a DC current gain range of 40 to 100 when measured at V_CE = -2 V and I_C = -150 mA. This range is production-tested and binned-no unit falls outside it. For design margin, use h_FE(min) = 40 in worst-case bias calculations and h_FE(max) = 100 for saturation verification.

Does BD17610STU support pulsed operation, and what are the limits?

Yes, BD17610STU supports pulsed collector current up to -7 A under specified test conditions: pulse width = 300 µs, duty cycle ≤ 1.5%. This capability enables use in intermittent high-load applications like relay coil energization or motor stall protection. Pulse operation must respect the Safe Operating Area (SOA) curves-voltage and current must not jointly exceed the SOA boundary at any instant.

What thermal resistance values apply to BD17610STU, and how do they affect heatsink selection?

BD17610STU has R_θJC = 8.5°C/W (junction-to-case) and R_θJA = 70°C/W (junction-to-ambient, no heatsink). For a target T_J ≤ 130°C at P_C = 20 W, the required heatsink thermal resistance (R_θSA) must be ≤ 1.5°C/W, assuming 0.5°C/W interface resistance. Use the R_θJC value-not R_θJA-when calculating heatsink requirements with a properly mounted, insulated heatsink.