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onsemi BD179G

Part No.:
BD179G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-225AA, TO-126-3
Datasheet:
AetrixBD179G.pdf
Description:
TRANS NPN 80V 3A TO-126
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,754

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Product details

Overview

BD179G from onsemi is a plastic medium-power silicon NPN transistor designed for 5.0–10 W audio amplifiers and driver stages in complementary or quasi-complementary circuits. It delivers VCEO = 80 V, IC = 3.0 A, PD = 30 W at TC = 25°C, hFE = 63–160 (at IC = 0.15 A), and fT = 3.0 MHz - enabling robust linear amplification in mid-power analog signal paths.

For engineers reviewing the BD179G datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-225 package thermal resistance (RθJC = 4.16°C/W), safe operating area under pulse conditions, VCE(sat) ≤ 0.8 V at IC/IB = 10, and Pb-free RoHS compliance for industrial audio and power stage designs.

Technical Context

The BD179G operates as a linear NPN power transistor with specified DC current gain across collector current (hFE = 63 min at IC = 0.15 A; 15 min at IC = 1.0 A) and defined saturation behavior (VCE(sat) ≤ 0.8 V, VBE(on) ≤ 1.3 V). Its SOA curve explicitly defines secondary breakdown limits for pulse duty cycles <10% and thermal derating above 25°C.

It is electrically complementary to the BD180 PNP transistor and shares identical TO-225 (Case 77, Style 1) mechanical construction - emitter-base-collector pinout (1-3-2), backside collector tab, and 4.16°C/W junction-to-case thermal resistance - enabling matched pair use in push-pull output stages.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO80 V - maximum collector-emitter voltage before breakdown; sets rail voltage limit in Class AB amplifier outputs
IC3.0 A - continuous collector current rating; supports ≥10 W dissipation into 8 Ω loads with proper heatsinking
PD @ 25°C30 W - total power dissipation at case temperature 25°C; requires thermal design margin for real-world ambient conditions
hFE63–160 - DC current gain range at IC = 0.15 A; enables stable biasing in fixed-current or emitter-degenerated stages
fT3.0 MHz - transition frequency at IC = 250 mA; sufficient for full-audio-band amplification up to 20 kHz
RθJC4.16°C/W - junction-to-case thermal resistance; determines minimum heatsink requirement for sustained power operation
VCE(sat)≤ 0.8 V @ IC/IB = 10 - low saturation voltage reduces conduction loss and improves efficiency in Class B/AB drivers

Pinout & Package

BD179G uses the TO-225 package (Case 77, Style 1), featuring a metal backside collector tab for direct heatsink mounting and three leads in a straight-line configuration. The package provides mechanical robustness and thermal performance suitable for medium-power discrete amplifier applications.

Pin/TerminalCircuit RoleDesign Meaning
1EmitterReference node for base drive; connected to ground or negative rail in common-emitter configurations
2 & 4CollectorBackside metal tab and lead 2 are internally connected to collector; primary heat path and high-current output node
3BaseCurrent-controlled input terminal; requires external bias network to set operating point in linear region

Key Features

FeatureDesign Value
High DC current gainhFE ≥ 63 at IC = 0.15 A - enables low-base-drive-current bias networks and stable quiescent point control
Complementary pairingMatched electrical specs and identical TO-225 package with BD180 - simplifies push-pull output stage layout and thermal symmetry
Pb-free & RoHS compliantG-suffix denotes lead-free termination and full RoHS compliance - meets environmental requirements for industrial and consumer audio products
Defined SOAPublished Safe Operating Area curves for pulse and DC conditions - allows reliable design of transient-tolerant amplifier stages without secondary breakdown

Applications

Audio Power Amplifier Output StageQuasi-Complementary Driver

Use Scenario: Final output stage in 5–10 W stereo audio amplifiers driving 4–8 Ω speakers.

IC Role / Device Role / Timing Role: NPN power transistor in Class AB push-pull configuration delivering linear current gain and low distortion.

Use Value: VCEO = 80 V and IC = 3.0 A support ±35 V rails and peak currents >2 A into reactive loads.

Use Scenario: Driver stage preceding high-current output transistors in quasi-complementary topologies.

IC Role / Device Role / Timing Role: Medium-power NPN buffer providing current gain and isolation between voltage amplifier and output devices.

Use Value: hFE ≥ 63 and fT = 3.0 MHz ensure faithful signal replication across full audio bandwidth with minimal phase shift.

Complementary Pair AmplifierIndustrial Audio Signal Generator

Use Scenario: Paired with BD180 PNP in symmetrical push-pull output stages for low-crossover-distortion amplification.

IC Role / Device Role / Timing Role: Matched NPN half of complementary pair; identical TO-225 footprint and thermal characteristics enable balanced thermal tracking.

Use Value: Identical RθJC = 4.16°C/W and pinout (Style 1) simplify heatsink mounting and PCB layout for dual-transistor modules.

Use Scenario: Output driver in programmable audio test equipment generating calibrated sine waves up to 20 kHz.

IC Role / Device Role / Timing Role: Linear power device operating in active region to deliver precise amplitude-controlled signals into variable loads.

Use Value: Low VCE(sat) ≤ 0.8 V and tight hFE distribution reduce harmonic distortion and improve amplitude linearity over temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJE179GSame TO-225 package, identical pinout (Style 1), but higher hFE min = 75 at IC = 0.15 A and lower VCEO = 60 VNot suitable for 80 V rail designs; preferred where higher gain and tighter hFE spread are needed at lower voltageSelect MJE179G only if system rail voltage ≤ 60 V and gain consistency is prioritized over voltage headroom
BD139TO-126 package (not TO-225), different pinout (E-B-C), VCEO = 80 V, IC = 1.5 A, PD = 12.5 W - lower power capability and no backside collector tabRequires PCB redesign and reduced power handling; unsuitable for direct replacement in 30 W thermal pathsConsider BD139 only for space-constrained, lower-power (<10 W) applications where TO-126 footprint is mandated

Compared with MJE179G and BD139, BD179G uniquely balances 80 V voltage rating, 30 W dissipation, TO-225 thermal interface, and complementary pairing with BD180 - making it the optimal choice for thermally demanding, rail-voltage-critical audio output stages requiring matched bipolar pairs.

Availability

BD179G is available at Aetrix Electronics and suitable for audio power amplifiers, quasi-complementary drivers, and industrial signal generators requiring stable component supply and long-term manufacturability.

Supply support for BD179G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and discrete devices.

The BD179G belongs to onsemi's legacy medium-power bipolar transistor product line, engineered specifically for linear audio amplification, driver stages, and complementary output circuits in industrial and consumer audio systems.

FAQ

What is the maximum collector-emitter voltage rating for BD179G?

The BD179G has a maximum collector-emitter sustaining voltage V(BR)CEO of 80 Vdc at IC = 0.1 Adc and IB = 0. This rating defines the absolute upper limit for DC voltage applied between collector and emitter before breakdown occurs. Exceeding this value risks permanent device failure, especially under sustained or pulsed conditions outside the published SOA boundaries. Designers must ensure all operating points for BD179G remain within this 80 V ceiling, including transient spikes and ripple components in power supply rails.

Is BD179G pin-compatible with BD180?

BD179G is electrically complementary to BD180 but not pin-compatible - BD180 is a PNP transistor with identical TO-225 (Case 77, Style 1) package and matching pinout (Emitter-Base-Collector = pins 1-3-2), enabling direct physical placement as a pair in push-pull layouts. However, polarity reversal means external circuit connections must be mirrored: BD179G's emitter connects to ground/negative rail while BD180's emitter connects to positive rail. Both share identical thermal and mechanical interfaces, simplifying heatsink integration in complementary amplifier designs.

What is the thermal resistance from junction to case for BD179G?

The BD179G has a maximum junction-to-case thermal resistance RθJC of 4.16°C/W, measured under standard test conditions. This value reflects the thermal path from the silicon die to the metal backside collector tab, which serves as the primary heatsink interface. In practice, effective thermal performance depends on mounting pressure, thermal interface material quality, and heatsink surface flatness. Designers must apply derating per the datasheet's 240 mW/°C slope above 25°C case temperature to avoid exceeding the 150°C maximum junction temperature.

Does BD179G support audio-frequency amplification up to 20 kHz?

Yes, BD179G supports full-audio-band amplification up to 20 kHz due to its 3.0 MHz current-gain bandwidth product (fT) measured at IC = 250 mAdc, VCE = 10 Vdc, and f = 1.0 MHz. At typical audio operating currents (0.1–1.0 A), the device maintains sufficient gain margin and phase stability across the 20 Hz–20 kHz range. Its SOA curves and low VCE(sat) further ensure linear operation without slew-induced distortion when driving reactive speaker loads.

What does the "G" suffix in BD179G signify?

The "G" suffix in BD179G indicates a Pb-free (lead-free) package compliant with RoHS Directive 2011/65/EU. This designation confirms that all solderable terminations and internal construction meet strict heavy-metal restrictions, including ≤1000 ppm lead content. The "G" marking appears on the device body alongside year-week date code (YWW) and is verified in onsemi's official packaging documentation. BD179G is not a different electrical variant - its electrical specifications, thermal performance, and mechanical dimensions are identical to non-G versions, except for the environmentally compliant finish.

BD179G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-225AA, TO-126-3
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
3 A
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
800mV @ 100mA, 1A
Current - Collector Cutoff (Max):
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
63 @ 150mA, 2V
Power - Max:
30 W
Frequency - Transition:
3MHz
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-126

BD179G FAQ

1.How can I place an order for BD179G through Aetrix?

Please submit a Request for Quotation (RFQ) for BD179G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BD179G reliable?

The price and inventory of BD179G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BD179G is usually 5 days.

3.What payment methods are accepted for BD179G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BD179G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BD179G?

BD179G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BD179G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BD179G?

For technical support, including BD179G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BD179G requirements.

6.How does Aetrix verify that BD179G is sourced from the original manufacturer or authorized distributors?

All BD179G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BD179G meets industry standards.

7.What is the process for return or replacement of BD179G?

All BD179G units undergo pre-shipment inspection (PSI). If there is an issue with BD179G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BD179G part is unused and in its original packaging.

Return procedure for BD179G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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