My Inquiry
My Account
onsemi BD237G
.JPG)
- Part No.:
- BD237G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-225AA, TO-126-3
- Datasheet:
-
BD237G.pdf
- Description:
- TRANS NPN 80V 2A TO-126
- Quantity:
- Payment:
- Shipping:
Inventory:900
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BD237G from ON Semiconductor is an NPN epitaxial silicon power transistor in TO-126 package, rated for 100 V collector-base voltage (VCBO), 80 V collector-emitter voltage (VCEO), and 2 A continuous collector current (IC), designed for medium-power linear amplification and switching applications such as power supply regulation and motor control.
For engineers reviewing the BD237G datasheet, pinout, applications, or equivalent options, key selection criteria include its 25 W collector dissipation at TC = 25°C, 3 MHz fT bandwidth, VCE(sat) of 0.6 V at IC = 1 A / IB = 0.1 A, hFE range of 25–100, and compatibility with complementary PNP devices BD238G.
Technical Context
The BD237G operates as a medium-power bipolar junction transistor with fixed DC gain characteristics optimized for stable operation in Class AB audio output stages and DC-DC converter switching circuits. Its VCER rating matches VCBO at 100 V, confirming robust avalanche capability under inductive load conditions.
Designed for through-hole mounting and heatsink attachment via the collector tab, the device features a base-emitter ON voltage of 1.3 V at IC = 1 A and exhibits safe operating area (SOA) compliance up to 10 µs pulse width at full rated voltage and current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO | 100 V - maximum reverse-biased collector-base voltage before breakdown; defines safe operation with floating emitter |
| VCEO | 80 V - maximum collector-emitter voltage under open-base condition; sets upper limit for switching rail voltage |
| IC (DC) | 2 A - continuous collector current handling capacity; determines usable output power in linear mode |
| PC (TC=25°C) | 25 W - thermal power dissipation limit at case temperature 25°C; requires heatsink for sustained >1.5 A operation |
| fT | 3 MHz - current-gain bandwidth product; supports audio-frequency amplification and low-speed switching up to ~300 kHz |
| VCE(sat) | 0.6 V at IC = 1 A / IB = 0.1 A - low saturation voltage reduces conduction loss in switching applications |
| hFE | 25 min at VCE = 2 V, IC = 1 A - minimum DC current gain ensures reliable base drive sizing for saturated switch design |
Pinout & Package
BD237G is housed in a TO-126 plastic package with integrated metal tab for mechanical mounting and thermal conduction. The collector is internally connected to the tab, requiring electrical isolation when mounted to heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Emitter terminal | Reference node for current flow; connects to ground or low-side return path in common-emitter configuration |
| 2 (Collector) | Collector terminal | Main high-current output node; electrically tied to metal tab; must be insulated from chassis unless referenced to system ground |
| 3 (Base) | Control input | Current-driven gate for BJT operation; requires series resistor to limit IB and ensure saturation at target IC |
Key Features
| Feature | Design Value |
|---|---|
| High VCBO rating | 100 V enables use in 72 V nominal bus systems with margin for transients and inductive kickback |
| Low VCE(sat) | 0.6 V at 1 A reduces power loss to ≤0.6 W per transistor in saturated switching, improving efficiency |
| TO-126 package | Standard through-hole outline with integral heatsink tab supports manual assembly and field-replaceable designs |
| Complementary pairing | Matched performance with BD238G (PNP) allows push-pull amplifier and H-bridge driver implementation |
Applications
| Audio Power Amplifier Output Stage | Linear Voltage Regulator Pass Element |
|---|---|
Use Scenario: Final output stage in discrete Class AB audio amplifiers delivering 10–20 W into 4–8 Ω loads. IC Role / Device Role / Timing Role: NPN power transistor configured in common-emitter topology, driven by pre-driver stage to deliver amplified current to speaker load. Use Value: 3 MHz fT and 25–100 hFE support stable mid-band gain with minimal phase shift; 25 W PC allows short-term peak power handling beyond RMS rating. | Use Scenario: Series pass element in adjustable linear regulators powering analog sensor subsystems or precision DACs. IC Role / Device Role / Timing Role: Current-controlled series regulator transistor dissipating excess voltage as heat to maintain stable output. Use Value: Low VCE(sat) minimizes dropout voltage; 80 V VCEO accommodates wide input ranges (e.g., 24–72 V industrial supplies) with safety margin. |
| DC Motor Speed Controller | Switch-Mode Power Supply Switch |
Use Scenario: Single-ended switch driving brushed DC motors up to 150 W in industrial actuators or HVAC dampers. IC Role / Device Role / Timing Role: High-current switching transistor controlled by PWM signal from microcontroller or dedicated gate driver. Use Value: 2 A IC and 100 V VCER withstand back-EMF spikes during commutation; SOA curve validated for 100 µs pulses at full voltage/current. | Use Scenario: Main switch in low-frequency (<100 kHz) flyback or forward converters for auxiliary power rails. IC Role / Device Role / Timing Role: Primary-side switching transistor turning on/off transformer primary winding under PWM control. Use Value: 100 V VCBO and 80 V VCEO meet IEC 62368-1 transient requirements for 24/48 V input; TO-126 facilitates thermal management without complex PCB layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJE13003G | Higher VCEO (400 V), lower hFE (min 5), TO-220 package, higher fT (4 MHz) | Better suited for high-voltage SMPS primary switches; less ideal for linear audio due to lower gain linearity | Select when >100 V blocking or higher switching frequency required; verify base drive compatibility due to lower hFE |
| BD139-16 | Lower VCBO (80 V), same TO-126, hFE bin 160–320, PC = 12.5 W | Optimized for audio linearity at lower power; insufficient for 72 V bus or high-dissipation switching | Prefer for cost-sensitive audio preamp stages where voltage stress and thermal load are moderate |
Compared with MJE13003G and BD139-16, BD237G offers balanced voltage rating (100 V VCBO), proven SOA for pulsed loads, and TO-126 thermal interface-making it optimal for industrial 48–72 V systems needing reliable medium-power switching or linear gain without TO-220 footprint constraints.
Availability
BD237G is available at Aetrix Electronics and suitable for industrial motor drives, analog audio amplifiers, linear power supplies, and DC-DC converter designs requiring stable component supply and long-term manufacturability.
Supply support for BD237G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
The BD237G belongs to ON Semiconductor's legacy Fairchild linear transistor portfolio, engineered for robustness and thermal reliability in medium-power discrete applications where TO-126 form factor and predictable BJT behavior are essential.
FAQ
What is the maximum continuous collector current for BD237G?
The BD237G has a maximum continuous collector current (IC) of 2 A at case temperature TC = 25°C. Derating is required above 25°C per the power derating curve in the datasheet - for example, at TC = 100°C, the usable IC drops to approximately 1.2 A. This rating assumes proper heatsinking and adherence to the Safe Operating Area limits defined in the BD237G datasheet.
Does BD237G have a built-in base-emitter resistor?
No, BD237G is a standard three-terminal NPN bipolar junction transistor without any integrated base-emitter resistors. It requires external base drive circuitry - including a current-limiting resistor - to establish proper biasing and saturation conditions. This distinguishes it from digital transistors (e.g., NSD1201), which integrate resistors for simplified logic-level interfacing.
Is BD237G pin-compatible with BD235G or BD233G?
Yes, BD237G shares identical TO-126 package outline and pinout (Emitter-Collector-Base) with BD235G and BD233G. However, their voltage and gain ratings differ: BD233G is rated for 45 V VCBO, BD235G for 60 V, and BD237G for 100 V. Substitution requires verification that the higher voltage rating of BD237G is necessary and that its hFE range (25–100) meets the circuit's drive requirements.
What is the typical DC current gain (hFE) of BD237G at 1 A collector current?
The BD237G specifies a minimum hFE of 25 at VCE = 2 V and IC = 1 A. Typical values observed in characterization fall between 40 and 70 under those conditions. Designers should use the minimum value (25) for worst-case base drive calculations to ensure saturation across process and temperature variations.
Can BD237G be used in avalanche mode?
Yes, BD237G is rated for VCER = 100 V - equal to its VCBO - indicating it is characterized for controlled avalanche operation with the base open. This makes it suitable for snubberless inductive switching applications where energy absorption during turn-off is required, provided peak pulse conditions remain within the published SOA limits and junction temperature stays below 150°C.
BD237G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-225AA, TO-126-3
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 25 @ 1A, 2V
- Power - Max:
- 25 W
- Frequency - Transition:
- 3MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-126
BD237G FAQ
1.How can I place an order for BD237G through Aetrix?
Please submit a Request for Quotation (RFQ) for BD237G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BD237G reliable?
The price and inventory of BD237G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BD237G is usually 5 days.
3.What payment methods are accepted for BD237G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BD237G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BD237G?
BD237G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BD237G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BD237G?
For technical support, including BD237G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BD237G requirements.
6.How does Aetrix verify that BD237G is sourced from the original manufacturer or authorized distributors?
All BD237G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BD237G meets industry standards.
7.What is the process for return or replacement of BD237G?
All BD237G units undergo pre-shipment inspection (PSI). If there is an issue with BD237G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BD237G part is unused and in its original packaging.
Return procedure for BD237G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BD237G Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
