onsemi BD244C

Overview

BD244C from ON Semiconductor is a PNP epitaxial silicon power transistor in TO-220 package, rated for -100 V V_CEO, -6 A continuous collector current, 65 W power dissipation at T_C = 25°C, and 150°C maximum junction temperature-used in medium-power linear regulation and switching circuits such as DC motor drivers and power supply pass elements.

For engineers reviewing the BD244C datasheet, pinout, applications, or equivalent options, key selection considerations include its -100 V V_CEO rating, -6 A I_C capability, TO-220 thermal performance, h_FE ≥15 at -3 A, and V_CE(sat) ≤ -1.5 V at -6 A/-1 A drive-critical for high-voltage PNP switching and linear amplification designs.

Technical Context

The BD244C operates as a medium-power PNP bipolar junction transistor with fixed three-terminal configuration (Base, Collector, Emitter), designed for linear and switching applications where complementary NPN devices like BD243C are deployed. Its safe operating area (SOA) supports pulsed operation up to -10 A with 2% duty cycle, and it exhibits V_BE(on) ≈ -2 V at -6 A load.

Thermal design relies on case-to-heatsink mounting via the metal tab (Collector-connected), with power derating beginning at T_C > 25°C per the published curve. It is not intended for RF, digital logic, or low-noise analog signal paths-its parameters reflect optimized DC/low-frequency power control.

Key Specifications

Pinout & Package

BD244C uses the standard TO-220 package with metal tab (Collector-connected) and three leads: Pin 1 = Base, Pin 2 = Collector (tab), Pin 3 = Emitter. The package provides mechanical robustness and direct heatsink mounting capability for power dissipation management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJD244G and BD244CTU, the BD244C offers superior thermal performance in through-hole systems due to its 65 W rating and robust TO-220 mechanical interface, while BD244CTU maintains full compatibility with legacy designs requiring RoHS compliance.

Availability

BD244C is available at Aetrix Electronics and suitable for DC motor control, linear voltage regulation, and power supply protection requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for BD244C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete solutions for automotive, industrial, and cloud infrastructure markets.

The BD244C belongs to ON Semiconductor's legacy power bipolar transistor product line, originally developed by Fairchild and maintained for industrial linear and switching applications demanding proven reliability and broad voltage-current capability.

FAQ

What is the maximum collector-emitter voltage rating for BD244C?

The BD244C has a maximum collector-emitter voltage (V_CEO) rating of -100 V at T_C = 25°C. This rating is confirmed in the Absolute Maximum Ratings table and applies under DC conditions with zero base current. Exceeding this voltage risks avalanche breakdown and permanent device failure. Designers must ensure transient overvoltage margins-including inductive kickback-remain within this limit, especially in motor or relay driving applications where BD244C is commonly deployed.

Is BD244C pin-compatible with BD244B or BD244A?

No, BD244C is not pin-incompatible with BD244B or BD244A in terms of physical pinout-each shares the same TO-220 package and 1-Base / 2-Collector / 3-Emitter pin assignment-but they differ electrically: BD244C has higher -100 V V_CEO and V_CBO ratings versus -80 V (BD244B) and -60 V (BD244A). Substituting BD244C for lower-voltage variants is safe; substituting lower-rated versions for BD244C risks overvoltage failure. Always verify voltage stress in the target circuit before interchange.

What is the typical base-emitter on voltage for BD244C at full load?

The BD244C exhibits a typical base-emitter on voltage (V_BE(on)) of -2 V when operated at I_C = -6 A and V_CE = -4 V, as specified in the Electrical Characteristics table. This value reflects the forward-biased PN junction drop needed to sustain full conduction and directly impacts base drive circuit design-e.g., requiring ≥2.5 V negative swing from a driver stage to ensure reliable saturation. Actual V_BE(on) may vary ±0.2 V across temperature and unit-to-unit tolerance.

Does BD244C require a heatsink in normal operation?

Yes, BD244C requires a heatsink whenever power dissipation exceeds ~5–10 W continuously, due to its 65 W maximum rating at T_C = 25°C and steep thermal derating curve. For example, at I_C = -4 A and V_CE = -2 V (8 W), case temperature can rise rapidly without thermal management. The metal tab (Collector) must be mounted to an appropriately sized heatsink using thermal compound and insulated hardware if electrical isolation is needed. Failure to heatsink may cause junction temperature to exceed 150°C and trigger thermal runaway.

How does BD244C compare to its NPN complement BD243C?

BD244C is the designated PNP complement to BD243C (NPN), sharing identical voltage ratings (-100 V V_CEO/V_CBO), current capability (-6 A I_C), power dissipation (65 W), and TO-220 package. Their h_FE and V_CE(sat) values are closely matched across operating ranges, enabling balanced push-pull or complementary symmetry in amplifier and H-bridge output stages. This pairing simplifies design validation and reduces BOM complexity in bidirectional power control applications.