STMicroelectronics BD536

Overview

BD536 from STMicroelectronics is a PNP complementary power transistor in TO-220 package, designed for high-current linear and switching applications. It delivers 8 A collector current, 80 V collector-emitter sustaining voltage (VCEO(sus)), and low 0.8 V saturation voltage at IC = 6 A / IB = 0.6 A, enabling efficient operation in motor drive output stages and DC-DC converter power switches.

For engineers reviewing the BD536 datasheet, BD536 pinout, BD536 application, or BD536 equivalent, key selection criteria include its PNP polarity, 50 W total dissipation at Tcase = 25°C, 150 °C max junction temperature, and compatibility with BD535/BD537 NPN counterparts in push-pull amplifier and H-bridge configurations.

Technical Context

The BD536 uses Planar technology with "Base Island" layout to achieve high DC current gain (hFE ≥ 15 at IC = 2 A, VCE = 2 V) and low VCE(sat), supporting stable biasing in Class AB audio output stages and industrial relay drivers. Its negative-polarity absolute maximum ratings-e.g., VCBO = –80 V, VCES = –80 V-reflect strict PNP device conventions.

Electrical characteristics are specified under controlled case temperature (Tcase = 25°C), with pulsed test conditions applied for VCEO(sus) (300 ms, duty cycle ≥1.5%). Safe operating area (SOA) curves and derating behavior confirm suitability for continuous conduction mode in 50–100 W power stages.

Key Specifications

Pinout & Package

BD536 is housed in a standard TO-220 package with three leads: emitter (E), base (B), and collector (C). The metal tab is electrically connected to the collector and must be insulated when mounted to grounded heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with BD534 and MJD44H11T4, BD536 uniquely balances 80 V ruggedness, 50 W dissipation, and TO-220 through-hole compatibility-making it optimal for field-serviceable, medium-power industrial controls where voltage margin and heatsink flexibility are critical.

Availability

BD536 is available at Aetrix Electronics and suitable for industrial motor drives, linear regulator modules, and relay driver circuits requiring stable component supply and long-term manufacturability.

Supply support for BD536 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive-grade ICs.

BD536 belongs to ST's complementary bipolar power transistor family, engineered for robust linear and switching operation in industrial power conversion and control systems where reliability under sustained thermal stress is essential.

FAQ

Is BD536 pin-compatible with BD534 or BD535?

BD536 shares identical TO-220 mechanical footprint and pinout (E-B-C) with BD534 and BD535, but polarity differs: BD536 is PNP while BD535 is NPN. Swapping them without circuit redesign will cause functional failure due to reversed current flow and bias requirements.

What is the recommended heatsink thermal resistance for BD536 at 6 A continuous current?

At IC = 6 A and Tcase = 25°C, BD536 dissipates ~4.8 W (VCE(sat) × IC). To maintain TJ ≤ 150°C with ambient at 50°C, a heatsink with R_θSA ≤ 12.5°C/W is required, assuming R_θJC = 1.5°C/W and thermal interface resistance of 0.5°C/W.

Does BD536 support pulse-width modulation (PWM) switching at 20 kHz?

Yes-BD536's resistive-load switching time (t_on/t_off) is specified in Figures 14–17. At IC = 2 A, t_on ≈ 0.8 µs and t_off ≈ 1.2 µs, enabling clean 20 kHz operation with <5% duty-cycle distortion when driven with adequate base current slew rate.

Can BD536 be used in avalanche mode for energy clamping?

No-BD536 is not rated for repetitive avalanche operation. Its VCEO(sus) is tested under pulsed conditions (300 ms, ≥1.5% duty cycle), and the datasheet does not specify single-pulse avalanche energy (E_AS) or ruggedness curves. Use dedicated TVS or clamp diodes for transient suppression.