Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi BD676G

Name: BD676G
Brand: onsemi
SKU: BD676G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BD676G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-225AA, TO-126-3

Datasheet:: BD676G.pdf

Description:: TRANS PNP DARL 45V 4A TO-126

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,586

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BD676G from onsemi is a plastic medium-power silicon PNP Darlington transistor designed for complementary general-purpose amplifier output stages, with V_CEO = 45 V, I_C = 4.0 A, P_D = 40 W at T_C = 25 °C, h_FE ≥ 750 (I_C = 1.5 A), and TO-225 package. It delivers high-current switching and linear amplification in audio output and power control circuits.

For engineers reviewing the BD676G datasheet, pinout, applications, or equivalent options, key selection considerations include its 45 V V_CEO, 4 A continuous collector current capability, Darlington-integrated base drive efficiency, thermal resistance of 3.13 °C/W (junction-to-case), and Pb-free RoHS-compliant TO-225 packaging.

Technical Context

The BD676G implements a monolithic PNP Darlington pair structure, integrating driver and output transistors on a single die to achieve high DC current gain while maintaining stable thermal performance. Its design supports direct replacement in complementary amplifier topologies alongside NPN counterparts like BD675G.

Rated for operation from −55 °C to +150 °C junction temperature, the device features low V_CE(sat) ≤ 2.5 V (I_C = 1.5 A, I_B = 30 mA) and V_BE(on) ≈ 2.5 V, enabling efficient base-driven switching without external gain boosters in medium-power linear or saturated-mode applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	45 V - Maximum safe collector-emitter voltage before breakdown under open-base conditions; defines upper rail limit in amplifier or switch designs.
I_C	4.0 A - Continuous DC collector current rating; supports medium-power loads such as speaker drivers or relay coils.
P_D @ T_C = 25 °C	40 W - Total device power dissipation at case temperature 25 °C; requires heatsinking above ambient derating thresholds.
h_FE	≥ 750 @ I_C = 1.5 A - High DC current gain reduces required base drive current, simplifying driver stage design.
R_JC	3.13 °C/W - Junction-to-case thermal resistance; enables thermal modeling for heatsink sizing when mounted with standard hardware.
T_J Range	−55 to +150 °C - Operating junction temperature range; suitable for industrial and automotive under-hood environments.

Pinout & Package

BD676G uses the TO-225 package (Case 77-09, Style 1), with metal tab electrically connected to collector. The package provides mechanical robustness and thermal path integrity for medium-power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Main emitter terminal; connects to load return or ground reference in common-collector configurations.
2, 4	Collector	Dual collector pins (pins 2 and 4) tied internally to metal tab; must be connected to same potential-typically supply rail or heatsink.
3	Base	Control input; accepts low-current drive to enable high-current emitter output via Darlington action.

Key Features

Feature	Design Value
Monolithic Darlington construction	Single-die integration eliminates inter-device matching drift and parasitic inductance, improving reliability in high-gain analog stages.
High h_FE ≥ 750	Reduces required base drive current to ~2 mA for 1.5 A output, easing compatibility with microcontroller GPIO or op-amp outputs.
Pb-Free & RoHS compliant	Meets global environmental compliance requirements without sacrificing electrical or thermal performance.
Complementary pairing with BD675 series	Enables push-pull amplifier designs with matched gain, saturation, and thermal characteristics across PNP/NPN pairs.

Applications

Audio Power Amplifier Output Stage	DC Motor Driver (Medium Power)
Use Scenario: Final output stage in Class AB audio amplifiers delivering up to 20 W into 8 Ω loads. IC Role / Device Role / Timing Role: PNP Darlington output transistor providing high-current sourcing capability in complementary symmetry configuration. Use Value: High h_FE minimizes driver-stage complexity; 45 V V_CEO supports ±20 V rails; TO-225 package allows direct mounting to chassis heatsinks.	Use Scenario: H-bridge or single-ended driver for 12–24 V brushed DC motors drawing up to 3.5 A continuous. IC Role / Device Role / Timing Role: Medium-power PNP switch controlling motor current direction or enable state in discrete power stage. Use Value: Low V_CE(sat) ≤ 2.5 V reduces conduction loss; 4 A rating accommodates peak startup currents; thermal derating curve supports sustained duty cycles.
Relay/Actuator Driver	Linear Voltage Regulator Pass Element
Use Scenario: Driving 24 V/1 A industrial relays or solenoid actuators from logic-level controllers. IC Role / Device Role / Timing Role: High-gain PNP switch interfacing between low-power control logic and inductive load. Use Value: Base current as low as 2 mA suffices for full turn-on; integrated Darlington avoids need for cascaded transistors; built-in ESD protection enhances field reliability.	Use Scenario: Series pass element in adjustable linear regulators delivering up to 3 A at 5–15 V output. IC Role / Device Role / Timing Role: PNP pass transistor regulating output by modulating emitter current based on error amplifier feedback. Use Value: Stable h_FE ensures predictable loop gain; 40 W dissipation headroom supports 5 V dropout at 3 A; SOA curve validates safe operation under transient overload.

Audio Power Amplifier Output Stage

DC Motor Driver (Medium Power)

Use Scenario: Final output stage in Class AB audio amplifiers delivering up to 20 W into 8 Ω loads.

IC Role / Device Role / Timing Role: PNP Darlington output transistor providing high-current sourcing capability in complementary symmetry configuration.

Use Value: High h_FE minimizes driver-stage complexity; 45 V V_CEO supports ±20 V rails; TO-225 package allows direct mounting to chassis heatsinks.

Use Scenario: H-bridge or single-ended driver for 12–24 V brushed DC motors drawing up to 3.5 A continuous.

IC Role / Device Role / Timing Role: Medium-power PNP switch controlling motor current direction or enable state in discrete power stage.

Use Value: Low V_CE(sat) ≤ 2.5 V reduces conduction loss; 4 A rating accommodates peak startup currents; thermal derating curve supports sustained duty cycles.

Relay/Actuator Driver

Linear Voltage Regulator Pass Element

Use Scenario: Driving 24 V/1 A industrial relays or solenoid actuators from logic-level controllers.

IC Role / Device Role / Timing Role: High-gain PNP switch interfacing between low-power control logic and inductive load.

Use Value: Base current as low as 2 mA suffices for full turn-on; integrated Darlington avoids need for cascaded transistors; built-in ESD protection enhances field reliability.

Use Scenario: Series pass element in adjustable linear regulators delivering up to 3 A at 5–15 V output.

IC Role / Device Role / Timing Role: PNP pass transistor regulating output by modulating emitter current based on error amplifier feedback.

Use Value: Stable h_FE ensures predictable loop gain; 40 W dissipation headroom supports 5 V dropout at 3 A; SOA curve validates safe operation under transient overload.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BD676AG	Higher h_FE ≥ 750 tested at I_C = 2.0 A (vs. 1.5 A for BD676G); otherwise identical ratings and pinout.	Preferred where higher current gain stability is needed at >1.5 A load; same thermal and voltage limits.	Select BD676AG when operating near 2 A continuous collector current and tighter h_FE consistency is critical.
MJE700	Same V_CEO = 45 V, I_C = 4 A, TO-225 package, but lower typical h_FE (~500–1000 vs. guaranteed ≥750); not Pb-free by default.	Legacy alternative with broader distributor availability but no RoHS assurance unless specified.	Choose MJE700 only if legacy stock or non-RoHS compliance is acceptable; verify Pb-free status per batch if required.

Compared with BD676AG, the BD676G offers verified minimum h_FE at lower test current, simplifying drive design for sub-1.5 A loads; versus MJE700, BD676G guarantees RoHS compliance and tighter h_FE lower bound, supporting modern production and regulatory requirements.

Availability

BD676G is available at Aetrix Electronics and suitable for audio amplifier output stages, DC motor drivers, and relay interface circuits requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for BD676G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The BD676G belongs to onsemi's plastic medium-power Darlington transistor family, engineered for reliable complementary amplifier output stages and medium-current switching where high DC gain and thermal robustness are essential.

FAQ

What is the maximum collector-emitter voltage rating for BD676G?

The BD676G has a maximum collector-emitter voltage (V_CEO) rating of 45 Vdc, specified under open-base conditions with I_C = 50 mA. This rating defines the absolute upper limit for safe operation in linear or switching applications; exceeding it risks avalanche breakdown and permanent damage. Designers should maintain at least 20% margin below this value in production circuits.

Does BD676G require a heatsink in normal operation?

Yes, BD676G requires a heatsink when dissipating more than ~5 W continuously, due to its R_JC = 3.13 °C/W and maximum junction temperature of +150 °C. At ambient 50 °C and 20 W dissipation, case temperature would exceed 110 °C without heatsinking-well beyond safe limits. Mounting to a properly sized aluminum heatsink is mandatory for sustained 4 A operation.

Is BD676G pin-compatible with BD676AG?

Yes, BD676G and BD676AG share identical TO-225 pinout (Emitter=Pin 1, Collector=Pin 2&4, Base=Pin 3), mechanical dimensions, and maximum ratings. The only difference is h_FE test condition: BD676G is guaranteed ≥750 at I_C = 1.5 A, while BD676AG is rated at I_C = 2.0 A. PCB layout and footprint are fully interchangeable.

What is the safe operating area (SOA) limitation for BD676G at 25 °C case temperature?

At T_C = 25 °C, the BD676G's SOA is bounded by thermal limit (40 W), bonding wire limit (4 A), and secondary breakdown limit (e.g., 1.5 A at 30 V). Figure 2 in the onsemi BD676/D datasheet shows the IC–V_CE boundary: operation must remain left-and-below the curve. Exceeding SOA-even briefly-can cause localized hot-spot failure.

Can BD676G be used in place of BD675G in a complementary amplifier?

No-BD676G (PNP) and BD675G (NPN) are complementary devices intended for paired use, not substitution. They share matching V_CEO, I_C, and package, but opposite polarity. Replacing BD675G with BD676G would invert amplifier topology and cause circuit failure. Always use BD676G with BD675G in push-pull or quasi-complementary output stages.

BD676G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-225AA, TO-126-3

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP - Darlington

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 2.5V @ 30mA, 1.5A

Current - Collector Cutoff (Max):: 500µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 750 @ 1.5A, 3V

Power - Max:: 40 W

Frequency - Transition:: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-126

BD676G FAQ

1.How can I place an order for BD676G through Aetrix?

Please submit a Request for Quotation (RFQ) for BD676G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BD676G reliable?

The price and inventory of BD676G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BD676G is usually 5 days.

3.What payment methods are accepted for BD676G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BD676G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BD676G?

BD676G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BD676G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BD676G?

For technical support, including BD676G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BD676G requirements.

6.How does Aetrix verify that BD676G is sourced from the original manufacturer or authorized distributors?

All BD676G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BD676G meets industry standards.

7.What is the process for return or replacement of BD676G?

All BD676G units undergo pre-shipment inspection (PSI). If there is an issue with BD676G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BD676G part is unused and in its original packaging.

Return procedure for BD676G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…