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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi BD682S

Name: BD682S
Brand: onsemi
SKU: BD682S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BD682S

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-225AA, TO-126-3

Datasheet:: BD682S.pdf

Description:: TRANS PNP DARL 100V 4A TO-126-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BD682S from onsemi is a plastic medium-power silicon PNP Darlington transistor rated for 100 V_CEO, 4.0 A collector current, and 40 W total device dissipation at T_C = 25 °C. It features high DC current gain (h_FE ≥ 750 at I_C = 1.5 A), low V_CE(sat) (≤ 2.5 V), and operates across −55 to +150 °C junction temperature range. It serves as a high-gain output switch in complementary audio amplifier stages and motor drive circuits.

For engineers reviewing the BD682S datasheet, pinout, applications, or equivalent options, key selection criteria include its 100 V_CEO rating, TO-225 package thermal resistance (R_JC = 3.13 °C/W), complementary pairing with BD681, and suitability for linear/switching power output stages requiring high β and robust safe operating area.

Technical Context

The BD682S implements a monolithic PNP Darlington pair with integrated base-emitter shunt resistor omitted-requiring external base drive control. Its BV_CEO = 100 V and BV_CB = 100 V support high-voltage rail operation in Class AB amplifiers and relay drivers.

Thermal design is constrained by R_JC = 3.13 °C/W and derating of 0.32 W/°C above 25 °C; secondary breakdown limits define safe I_C–V_CE boundaries below 100 V and 4 A, especially under pulsed or inductive loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	100 Vdc - Maximum collector-emitter voltage before breakdown; enables use in 80 V rail amplifier outputs.
I_C	4.0 Adc - Continuous collector current handling; supports ≥3 W audio output into 8 Ω with margin.
P_D @ T_C=25°C	40 W - Total device dissipation at case temperature 25 °C; requires heatsink for sustained >10 W operation.
h_FE	≥750 @ I_C=1.5 A - High DC current gain reduces required base drive current to ≤2 mA.
V_CE(sat)	≤2.5 Vdc @ I_C=1.5 A, I_B=30 mA - Low saturation voltage minimizes conduction loss in switching applications.
R_JC	3.13 °C/W - Junction-to-case thermal resistance; determines minimum heatsink requirement for thermal stability.

Pinout & Package

BD682S is housed in a TO-225 package (Case 77-09, Style 1) with three leads and an electrically isolated backside tab. The package provides mechanical robustness and thermal path via the collector-connected tab.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Main emitter terminal; connects to load return or negative rail in common-emitter configurations.
2, 4	Collector	Collector terminals (pins 2 and 4 are internally tied); mounted to heatsink via backside tab for thermal management.
3	Base	Control input; requires current-limited drive due to Darlington's high β and lack of internal base resistor.

Key Features

Feature	Design Value
Monolithic Darlington construction	Single-die integration ensures matched transistor characteristics and stable h_FE over temperature.
High BV_CEO = 100 V	Supports operation in high-voltage audio amplifiers and industrial control systems up to ±45 V rails.
Low V_CE(sat) ≤ 2.5 V	Reduces power loss and heat generation during saturation, improving efficiency in linear and switching modes.
Complementary pairing with BD681	Enables push-pull output stage implementation without discrete matching or bias network redesign.

Applications

Audio Power Amplifier Output Stage	DC Motor Driver (H-Bridge Low-Side)
Use Scenario: Final output stage in 20–50 W Class AB audio amplifiers driving 4–8 Ω speakers. IC Role / Device Role / Timing Role: PNP Darlington output transistor delivering high-current, low-distortion signal swing. Use Value: High h_FE (≥750) simplifies driver stage design; 100 V_CEO accommodates peak signal swings up to ±35 V.	Use Scenario: Low-side switch in brushed DC motor H-bridge controlling 24–48 V, ≤3 A loads. IC Role / Device Role / Timing Role: High-current, high-voltage PNP switch sinking motor current during active PWM cycles. Use Value: 4.0 A I_C rating and 40 W dissipation enable continuous 2 A motor current with adequate heatsinking.
Relay and Solenoid Driver	Linear Voltage Regulator Pass Element
Use Scenario: Driving 24 V/1 A industrial relays or 12 V solenoids with inductive kick protection. IC Role / Device Role / Timing Role: Saturated-switching PNP Darlington providing low-loss, high-gain interface between logic-level MCU and inductive load. Use Value: V_CE(sat) ≤ 2.5 V minimizes power loss during hold state; 100 V_CEO withstands flyback transients up to 80 V.	Use Scenario: Pass transistor in adjustable linear regulators delivering up to 3 A at 5–24 V output. IC Role / Device Role / Timing Role: Series pass element dissipating excess input-output voltage difference as heat. Use Value: R_JC = 3.13 °C/W and 40 W rating allow stable operation at 15 V dropout × 2 A = 30 W dissipation with proper heatsink.

Audio Power Amplifier Output Stage

DC Motor Driver (H-Bridge Low-Side)

Use Scenario: Final output stage in 20–50 W Class AB audio amplifiers driving 4–8 Ω speakers.

IC Role / Device Role / Timing Role: PNP Darlington output transistor delivering high-current, low-distortion signal swing.

Use Value: High h_FE (≥750) simplifies driver stage design; 100 V_CEO accommodates peak signal swings up to ±35 V.

Use Scenario: Low-side switch in brushed DC motor H-bridge controlling 24–48 V, ≤3 A loads.

IC Role / Device Role / Timing Role: High-current, high-voltage PNP switch sinking motor current during active PWM cycles.

Use Value: 4.0 A I_C rating and 40 W dissipation enable continuous 2 A motor current with adequate heatsinking.

Relay and Solenoid Driver

Linear Voltage Regulator Pass Element

Use Scenario: Driving 24 V/1 A industrial relays or 12 V solenoids with inductive kick protection.

IC Role / Device Role / Timing Role: Saturated-switching PNP Darlington providing low-loss, high-gain interface between logic-level MCU and inductive load.

Use Value: V_CE(sat) ≤ 2.5 V minimizes power loss during hold state; 100 V_CEO withstands flyback transients up to 80 V.

Use Scenario: Pass transistor in adjustable linear regulators delivering up to 3 A at 5–24 V output.

IC Role / Device Role / Timing Role: Series pass element dissipating excess input-output voltage difference as heat.

Use Value: R_JC = 3.13 °C/W and 40 W rating allow stable operation at 15 V dropout × 2 A = 30 W dissipation with proper heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BD682G	Identical electrical specs and TO-225 package; Pb-free variant with "G" suffix marking; same thermal and SOA curves.	No functional difference; used interchangeably where RoHS compliance is required.	Select BD682G for new designs requiring Pb-free manufacturing; BD682S may be legacy stock or non-RoHS variant.
MJE703	Same V_CEO = 100 V, I_C = 4 A, P_D = 40 W, but h_FE min = 500 (vs. 750), and R_JC = 3.5 °C/W (vs. 3.13).	Slightly lower gain increases base drive demand; higher thermal resistance requires larger heatsink for same power.	Choose MJE703 only if BD682S/G availability is constrained; verify base drive capability and thermal margin in final layout.

Compared with BD682G, BD682S shares identical performance but may differ in RoHS status and marking; versus MJE703, BD682S offers superior h_FE and thermal resistance-critical for compact amplifier or regulator designs where drive efficiency and thermal headroom are limiting.

Availability

BD682S is available at Aetrix Electronics and suitable for audio power amplifiers, DC motor drivers, and industrial relay control systems requiring stable component supply and long-term BOM continuity.

Supply support for BD682S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The BD682S belongs to onsemi's plastic medium-power PNP Darlington family, engineered for high-gain, high-voltage linear and switching output stages in cost-sensitive industrial and audio applications.

FAQ

What is the maximum collector-emitter voltage rating for BD682S?

The BD682S has a maximum collector-emitter voltage (V_CEO) rating of 100 Vdc, verified per the onsemi datasheet under test condition I_C = 50 mA and I_B = 0. This rating defines the upper limit for safe DC or peak AC voltage applied between collector and emitter in the BD682S when the base is open. Exceeding this value risks avalanche breakdown and permanent device damage.

Does BD682S include an internal base-emitter resistor?

No, the BD682S does not integrate a base-emitter shunt resistor. As confirmed in the onsemi datasheet schematic and electrical characteristics, it is a standard two-terminal Darlington base configuration requiring externally controlled base current. This differs from digital transistors and allows precise biasing in linear amplifier and regulator applications using the BD682S.

What package type is used for BD682S and how is it mounted?

The BD682S uses the TO-225 package (Case 77-09, Style 1) with pins 2 and 4 both connected to the collector and the backside tab also collector-connected. For thermal management, the BD682S must be mounted to a heatsink using insulating hardware if the heatsink is grounded, as the collector is electrically exposed through the tab and pins.

How does BD682S compare to BD682G in terms of specifications and compliance?

The BD682S and BD682G share identical absolute maximum ratings, electrical characteristics, and thermal performance-including V_CEO = 100 V, I_C = 4.0 A, and R_JC = 3.13 °C/W. The "G" suffix denotes Pb-free and RoHS-compliant packaging; BD682S may represent a non-Pb-free variant or legacy marking. Both are functionally interchangeable where compliance requirements permit.

Is BD682S suitable for use in linear voltage regulator designs?

Yes, the BD682S is suitable as a pass transistor in linear voltage regulators. Its 40 W power dissipation rating at T_C = 25 °C, low V_CE(sat) ≤ 2.5 V, and high h_FE ≥ 750 reduce base drive burden and improve thermal efficiency. When used in a BD682S-based regulator, ensure heatsink sizing accounts for R_JC = 3.13 °C/W and derating above 25 °C.

BD682S Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-225AA, TO-126-3

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP - Darlington

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 2.5V @ 30mA, 1.5A

Current - Collector Cutoff (Max):: 500µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 750 @ 1.5A, 3V

Power - Max:: 14 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-126-3

BD682S FAQ

1.How can I place an order for BD682S through Aetrix?

Please submit a Request for Quotation (RFQ) for BD682S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BD682S reliable?

The price and inventory of BD682S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BD682S is usually 5 days.

3.What payment methods are accepted for BD682S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BD682S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BD682S?

BD682S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BD682S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BD682S?

For technical support, including BD682S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BD682S requirements.

6.How does Aetrix verify that BD682S is sourced from the original manufacturer or authorized distributors?

All BD682S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BD682S meets industry standards.

7.What is the process for return or replacement of BD682S?

All BD682S units undergo pre-shipment inspection (PSI). If there is an issue with BD682S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BD682S part is unused and in its original packaging.

Return procedure for BD682S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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