onsemi BD810
- Part No.:
- BD810
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
BD810.pdf
- Description:
- TRANS PNP 80V 10A TO-220
- Quantity:
- Payment:

- Shipping:

Inventory:6,417
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BD810 from onsemi is a PNP silicon power transistor designed for high-power audio amplifier output stages in complementary or quasi-complementary configurations, with 80 V VCEO, 10 A IC, 90 W PD at TC = 25°C, and DC current gain ≥30 at IC = 2.0 A, used in Class AB audio final amplification.
For engineers reviewing the BD810 datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, TO-220 package layout, thermal derating behavior, safe operating area limits, and validated alternative transistors for audio power stage design and replacement.
Technical Context
The BD810 operates as a medium-frequency PNP bipolar junction transistor optimized for linear audio power amplification, not switching. Its fT of 1.5 MHz supports stable operation up to mid-audio frequencies without oscillation under proper biasing and compensation.
It features a single-die construction in a TO-220 package with collector-connected case (pins 2 & 4), emitter (pin 3), and base (pin 1), enabling direct heatsink mounting and high-current conduction with low RJC = 1.39 °C/W for thermal management in compact amplifier chassis.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Maximum collector-emitter voltage before breakdown; sets rail voltage limit in ±40 V audio supplies. |
| IC | 10 A - Continuous collector current rating; supports ≥50 W RMS audio output into 8 Ω with headroom. |
| PD @ 25°C | 90 W - Total device dissipation at case temperature 25°C; requires heatsink for sustained operation above ~15 W. |
| hFE @ 2 A | ≥30 - Minimum DC current gain at 2 A collector current; ensures stable bias current setting in emitter-follower output stages. |
| VCE(sat) | ≤1.1 V @ IC/IB = 10 - Low saturation voltage reduces conduction loss and thermal stress in Class AB quiescent operation. |
| fT | 1.5 MHz - Current-gain bandwidth product; sufficient for full audio band (20 Hz–20 kHz) with margin for stability compensation. |
| RJC | 1.39 °C/W - Junction-to-case thermal resistance; enables precise heatsink sizing using measured case temperature. |
Pinout & Package
Package: TO-220 (Case 221A, Style 1), lead-free, collector-connected metal tab (pins 2 & 4).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biased PNP operation; requires negative drive relative to emitter in active region. |
| 2 & 4 | Collector | Common collector connection through metal tab; electrically tied and thermally coupled to heatsink for power dissipation. |
| 3 | Emitter | High-current output terminal; referenced to positive supply rail in typical PNP output stage configuration. |
Key Features
| Feature | Design Value |
|---|---|
| High DC current gain | hFE ≥30 at IC = 2.0 A - Enables stable bias networks with minimal base drive current in discrete output stages. |
| Low VCE(sat) | ≤1.1 V @ IC/IB = 10 - Reduces conduction loss and improves thermal efficiency in Class AB operation. |
| Robust SOA | DC Safe Operating Area defined up to 10 A / 80 V - Supports reliable linear operation without second breakdown in audio peak conditions. |
| Pb-Free & RoHS | ON Semiconductor BD810G marking - Complies with environmental regulations for industrial and consumer audio equipment manufacturing. |
Applications
| Audio Power Amplifier Output Stage | Complementary Push-Pull Driver |
|---|---|
Use Scenario: Final output stage in discrete Class AB hi-fi amplifier delivering 30–60 W into 8 Ω loads. IC Role / Device Role / Timing Role: PNP power transistor paired with NPN BD809 to form complementary output pair handling full audio waveform swing. Use Value: Delivers low-distortion linear amplification with VCE(sat) ≤1.1 V and hFE ≥30, minimizing crossover distortion and thermal drift. | Use Scenario: Quasi-complementary driver stage feeding MOSFET output devices in hybrid amplifier designs. IC Role / Device Role / Timing Role: High-current PNP emitter follower providing low-impedance drive to gate capacitance of downstream power FETs. Use Value: 10 A IC rating and 1.39 °C/W RJC enable robust transient current delivery without thermal runaway during dynamic bass transients. |
| High-Fidelity Receiver Output Module | Professional Audio Mixer Power Supply Regulator |
Use Scenario: Dual-channel stereo output module in AV receivers requiring matched PNP/NPN pairs per channel. IC Role / Device Role / Timing Role: Channel-matched BD810 (PNP) and BD809 (NPN) used in symmetrical output topology for balanced THD+N performance. Use Value: Tight hFE consistency across production lots and defined SOA ensure channel-to-channel gain matching and thermal symmetry. | Use Scenario: Series pass element in high-current, low-noise linear regulator for analog signal path supplies in mixing consoles. IC Role / Device Role / Timing Role: PNP series pass transistor regulating ±15 V rails with low dropout and minimal ripple propagation. Use Value: VCEO = 80 V and 90 W PD support >30 V input-to-output differential while maintaining <1.1 V dropout at 5 A load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD47 | Higher VCEO (100 V), lower hFE (min 20 @ 4 A), same TO-220 package | Preferred in higher-voltage amplifier rails (>±45 V); less suitable for low-distortion bias-sensitive stages | Select MJD47 when operating above 80 V collector-emitter stress or requiring extended SOA at elevated voltage. |
| 2SA1943 | Higher fT (30 MHz), higher hFE (min 55 @ 2 A), larger TO-3P package | Used in ultra-low-distortion high-end audio; requires larger heatsink and different mounting due to TO-3P footprint | Choose 2SA1943 for premium audio where bandwidth and gain linearity outweigh PCB space and thermal interface constraints. |
Compared with BD810, MJD47 offers higher voltage tolerance but reduced gain stability, while 2SA1943 delivers superior high-frequency linearity and gain in a physically larger package-making BD810 the optimal balance of size, gain, and thermal performance for mainstream discrete audio output stages.
Availability
BD810 is available at Aetrix Electronics and suitable for high-fidelity audio amplifiers, professional mixer power supplies, and complementary push-pull driver circuits requiring stable component supply and long-term manufacturability.
Supply support for BD810 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, and consumer markets.
The BD810 belongs to onsemi's plastic high-power silicon transistor family, engineered specifically for linear audio power amplification with emphasis on SOA integrity, thermal reliability, and complementary pairing with BD809.
FAQ
What is the maximum continuous collector current rating for BD810?
The BD810 is rated for 10 A continuous collector current (IC) at case temperature TC = 25°C. Derating applies above 25°C at 0.72 W/°C, and actual usable current depends on heatsink performance and ambient conditions. The BD810 must remain within its Safe Operating Area curve-especially critical at high VCE-to avoid second breakdown during audio transients.
Is BD810 pin-compatible with BD809?
Yes, BD810 (PNP) and BD809 (NPN) share identical TO-220 package pinout: pin 1 = base, pins 2 & 4 = collector, pin 3 = emitter. This allows direct physical substitution in complementary amplifier layouts, though polarity reversal requires circuit-level adjustments to bias and signal paths. The BD810 maintains the same mechanical footprint and thermal interface as BD809.
What is the thermal resistance junction-to-case for BD810?
The BD810 has a thermal resistance of RJC = 1.39 °C/W from junction to case, measured under standard mounting conditions. This value enables accurate heatsink thermal design when combined with known case-to-sink and sink-to-ambient resistances. The BD810's low RJC supports efficient heat transfer in compact audio chassis where airflow is limited.
Does BD810 meet RoHS requirements?
Yes, the BD810G variant is Pb-free and RoHS compliant, as confirmed by onsemi's marking "G" suffix and documentation in the BD809/D datasheet Rev. 8. The BD810 meets EU Directive 2011/65/EU and related regional environmental standards, making it suitable for consumer and professional audio equipment sold globally.
What is the minimum DC current gain (hFE) of BD810 at 4 A collector current?
The BD810 guarantees hFE ≥15 at IC = 4.0 A and VCE = 2.0 V, per the Electrical Characteristics table. This lower gain at higher current reflects typical BJT behavior and must be accounted for in bias network design. For stable quiescent current setting, designers should reference the hFE vs. IC curves in the BD810 datasheet-not just the 2 A specification-to ensure BD810 performance across its full operating range.
BD810 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 10 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.1V @ 300mA, 3A
- Current - Collector Cutoff (Max):
- 1mA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 15 @ 4A, 2V
- Power - Max:
- 90 W
- Frequency - Transition:
- 1.5MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
BD810 FAQ
1.How can I place an order for BD810 through Aetrix?
Please submit a Request for Quotation (RFQ) for BD810 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BD810 reliable?
The price and inventory of BD810 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BD810 is usually 5 days.
3.What payment methods are accepted for BD810?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BD810 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BD810?
BD810 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BD810 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BD810?
For technical support, including BD810 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BD810 requirements.
6.How does Aetrix verify that BD810 is sourced from the original manufacturer or authorized distributors?
All BD810 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BD810 meets industry standards.
7.What is the process for return or replacement of BD810?
All BD810 units undergo pre-shipment inspection (PSI). If there is an issue with BD810, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BD810 part is unused and in its original packaging.
Return procedure for BD810:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BD810 Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

