onsemi BD810G

Overview

BD810G from onsemi is a PNP high-power silicon bipolar junction transistor designed for complementary audio amplifier output stages, with 80 V V_CEO, 10 A I_C, 90 W P_D at T_C = 25°C, and DC current gain h_FE ≥15 at I_C = 4.0 A - used in Class-AB hi-fi power amplifiers and industrial linear power supplies.

For engineers reviewing the BD810G datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area (SOA) compliance at elevated case temperatures, V_CE(sat) ≤1.1 V under I_C/I_B = 10 drive, thermal resistance R_JC = 1.39 °C/W, and Pb-free TO-220 package compatibility with heatsink mounting standards.

Technical Context

The BD810G operates as a medium-frequency PNP power switch with f_T = 1.5 MHz, optimized for linear amplification rather than switching, featuring low saturation voltage and stable h_FE across −55°C to +150°C junction range.

Its SOA is defined by both thermal limits (derating 0.72 W/°C above 25°C) and second-breakdown constraints, with validated pulse operation up to 5 ms at 10% duty cycle and peak junction temperature capped at 150°C.

Key Specifications

Pinout & Package

BD810G uses the TO-220 (Case 221A, Style 1) package with metal tab connected to collector for direct heatsink mounting and electrically isolated mounting hole.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJD45H11G and BD139, BD810G uniquely balances 10 A current capacity, 80 V breakdown, and 1.39 °C/W thermal resistance in a single TO-220 package - making it irreplaceable in mid-power linear amplifier and regulator applications demanding simultaneous current, voltage, and thermal headroom.

Availability

BD810G is available at Aetrix Electronics and suitable for high-fidelity audio amplifiers, industrial linear power supplies, and motor control systems requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BD810G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The BD810G belongs to onsemi's legacy high-power bipolar transistor product line, engineered specifically for linear amplification and robust analog power control where SOA integrity, thermal reliability, and parameter consistency across temperature are primary design requirements.

FAQ

What is the maximum continuous collector current rating for BD810G?

The BD810G is rated for 10 A continuous collector current (I_C) at case temperature T_C = 25°C. Derating applies above this temperature at 0.72 W/°C, and actual usable current depends on heatsink performance and ambient conditions. At T_C = 75°C, the safe continuous I_C drops to approximately 6.5 A based on its 90 W P_D rating and thermal resistance. The BD810G datasheet specifies this limit under DC conditions with proper mounting.

Is BD810G pin-compatible with BD809G in complementary amplifier designs?

Yes, BD810G (PNP) and BD809G (NPN) share identical TO-220 package outlines, pin assignments (Base–Emitter–Collector), and mechanical mounting dimensions, enabling direct placement as complementary pairs on the same heatsink. Their electrical parameters - including V_CEO, I_C, h_FE, and V_CE(sat) - are closely matched per the onsemi BD809/D datasheet, supporting symmetrical Class-AB operation. The BD810G maintains this compatibility without layout changes.

Does BD810G require a heatsink for operation at 5 A collector current?

Yes, BD810G requires a heatsink even at 5 A collector current. At I_C = 5 A and V_CE = 2 V, power dissipation reaches ~10 W - exceeding its 25°C-rated 90 W only if ambient and thermal path allow. With R_JC = 1.39 °C/W and typical R_CS + R_SA ≈ 2.5 °C/W, junction temperature would exceed 125°C without heatsinking. A minimum 2.0°C/W heatsink is recommended for reliable 5 A DC operation. The BD810G thermal curve confirms this requirement.

What is the guaranteed minimum DC current gain (h_FE) for BD810G at 4 A collector current?

The BD810G guarantees h_FE ≥15 at I_C = 4.0 A and V_CE = 2.0 V, per the Electrical Characteristics table in the official onsemi BD809/D Rev. 8 datasheet. This value is tested and binned - not typical - ensuring predictable base drive requirements in production amplifiers. At lower currents (e.g., I_C = 2.0 A), h_FE rises to ≥30, improving efficiency in bias networks. The BD810G specification sheet documents this across temperature ranges.

Can BD810G be used in switching applications such as PWM motor control?

BD810G can operate in switching mode at frequencies ≤20 kHz with appropriate base drive, but it is optimized for linear operation. Its f_T = 1.5 MHz supports moderate-speed switching, yet saturation recovery time and SOA limitations restrict use in high-efficiency SMPS. For PWM motor control, ensure I_B/I_C ≥1/10 to maintain hard saturation and monitor pulse-width-limited SOA. The BD810G datasheet provides SOA graphs for pulsed conditions up to 5 ms.