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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

STMicroelectronics BD910

Name: BD910
Brand: STMicroelectronics
SKU: BD910
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BD910

Manufacturer:: STMicroelectronics

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: BD910.pdf

Description:: TRANS PNP 80V 15A TO-220

Quantity:: RFQ Add To RFQ list

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Inventory:7,094

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Product details

Overview

BD910 from STMicroelectronics is a complementary PNP silicon epitaxial-base power transistor in TO-220 package, designed for linear and switching power applications including audio output stages and DC-DC converter switches. It features V_CEO = –100 V, I_C = –15 A, P_tot = 90 W at T_c ≤ 25 °C, and R_thj-case = 1.4 °C/W, enabling high-current amplification and robust thermal handling in industrial power modules.

For engineers reviewing the BD910 datasheet, BD910 pinout, BD910 application, or BD910 equivalent, key selection criteria include negative polarity voltage/current ratings, safe operating area (SOA) derating curves, DC current gain (h_FE) at multiple collector currents, and junction-to-case thermal resistance for heatsink design validation.

Technical Context

The BD910 operates as a high-power PNP bipolar junction transistor with fully specified absolute maximum ratings and pulsed electrical characteristics. Its complementary pairing with BD911 (NPN) enables push-pull amplifier topologies, while its –100 V V_CEO and –15 A I_C support medium-voltage switching in offline SMPS and motor drive half-bridges.

Electrical behavior is characterized under controlled case temperature (T_case = 25 °C), with pulsed test conditions (300 µs, 1.5% duty cycle) applied to V_CEO(sus), V_CE(sat), and V_BE(sat). The device exhibits h_FE = 5–150 across I_C = 0.5–10 A, and f_T = 3 MHz at I_C = 0.5 A, confirming suitability for audio-frequency and low-MHz switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–100 V: Maximum collector-emitter blocking voltage with base open; defines upper voltage limit in switching applications.
I_C	–15 A: Continuous collector current rating; sets peak load capability in linear regulators and output stages.
P_tot	90 W at T_c ≤ 25 °C: Total power dissipation limit; determines minimum heatsink requirement for thermal management.
R_thj-case	1.4 °C/W: Junction-to-case thermal resistance; used to calculate junction temperature rise above heatsink temperature.
h_FE	5–150 (I_C = 0.5–10 A): DC current gain range; informs base drive sizing and stability margin in linear operation.
V_CE(sat)	–1 V @ I_C = –5 A, I_B = –0.5 A: Saturation voltage drop; directly impacts conduction loss and efficiency in switch-mode use.
f_T	3 MHz @ I_C = –0.5 A: Transition frequency; indicates usable bandwidth limit for small-signal amplification and switching speed.

Pinout & Package

BD910 is housed in JEDEC-standard TO-220 plastic package with three leads: Collector (pin 1), Base (pin 2), Emitter (pin 3). The metal tab is electrically connected to the collector and must be isolated from heatsink unless circuit topology permits common-collector mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (Tab side)	Collector	Primary high-current terminal; electrically tied to metal tab; requires insulation when mounted to grounded heatsink.
2 (Middle)	Base	Current-controlled input node; requires precise drive current (e.g., –2.5 A for –10 A I_C) to ensure saturation.
3 (Opposite tab)	Emitter	Reference terminal for PNP operation; typically connected to positive rail in high-side switch configurations.

Key Features

Feature	Design Value
Complementary PNP pairing	Matched with BD911 (NPN) for symmetrical push-pull amplifier stages and H-bridge drivers.
High safe operating area (SOA)	Defined DC and pulsed SOA curves enable reliable operation under inductive load switching without secondary breakdown.
Negative polarity voltage/current ratings	All absolute maxima and electrical specs are negative-valued, ensuring correct biasing in PNP-centric topologies.
Low V_CE(sat) at high current	–1 V at –5 A / –0.5 A confirms efficient conduction in power switching, reducing I²R losses.
150 °C max junction temperature	Enables operation in industrial environments with ambient temperatures up to 85 °C when properly heatsinked.

Applications

Audio Power Amplifiers

DC-DC Converter Switches

Use Scenario: High-fidelity Class-AB output stage delivering ±50 V swing into 4 Ω loads.

IC Role / Device Role / Timing Role: PNP output transistor in complementary pair with BD911, providing negative half-cycle current sourcing.

Use Value: V_CEO = –100 V and h_FE ≥ 15 at I_C = –5 A ensure headroom and linearity across full audio band.

Use Scenario: High-side switch in non-isolated buck converter for 24 V industrial control rails.

IC Role / Device Role / Timing Role: PNP power switch controlling current flow from input to inductor; driven by NPN pre-driver.

Use Value: R_thj-case = 1.4 °C/W and P_tot = 90 W allow continuous 10 A operation with standard TO-220 heatsink.

Motor Drive Half-Bridges

Linear Voltage Regulators

Use Scenario: Upper-leg switch in brushed DC motor driver with flyback diode protection.

IC Role / Device Role / Timing Role: High-side PNP switch enabling bidirectional current control when paired with N-channel low-side FET.

Use Value: V_CEO(sus) = –100 V withstands inductive kickback spikes up to 80 V during turn-off.

Use Scenario: Pass transistor in adjustable 3 A linear regulator for lab-grade instrumentation supplies.

IC Role / Device Role / Timing Role: Series pass element dissipating up to 45 W under 15 V dropout at 3 A load.

Use Value: SOA derating curves confirm stable operation at 75 °C case temperature with 1.4 °C/W thermal path.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BD912	Same family, lower V_CEO = –80 V and same I_C = –15 A; otherwise identical pinout and SOA.	Suitable only where bus voltage remains ≤ 60 V; not recommended for 100 V systems.	Select BD912 only if system V_IN < 60 V and cost sensitivity outweighs voltage margin.
MJD44H11T4	TO-252 (DPAK) package; V_CEO = –80 V; h_FE min = 20 at I_C = –3 A; R_thj-case = 3.0 °C/W.	Surface-mount alternative with lower power density; requires PCB copper area instead of external heatsink.	Choose MJD44H11T4 for space-constrained SMT designs accepting 30% higher thermal resistance.

Compared with BD912, BD910 offers +25% higher voltage margin for 100 V systems; versus MJD44H11T4, it delivers 53% lower thermal resistance and through-hole mechanical robustness for high-reliability power stages.

Availability

BD910 is available at Aetrix Electronics and suitable for audio power amplifiers, DC-DC converter switches, motor drive half-bridges requiring stable component supply and long-term industrial availability.

Supply support for BD910 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.

The BD9xx series belongs to ST's legacy high-power bipolar transistor product line, engineered specifically for industrial linear and switching power applications demanding ruggedness, SOA integrity, and complementary NPN/PNP pairing.

FAQ

Is BD910 pin-compatible with BD912?

Yes, BD910 and BD912 share identical TO-220 pinout (Collector-Base-Emitter), same mechanical dimensions, and matching thermal and electrical test conditions. The only functional difference is V_CEO (–100 V vs. –80 V) and corresponding V_CBO; all other parameters-including h_FE, V_CE(sat), and SOA-are identical per datasheet revision.

What is the maximum allowable case temperature for continuous 15 A operation?

At I_C = –15 A, power dissipation depends on V_CE(sat). Using V_CE(sat) = –3 V (max at I_C = –10 A, I_B = –2.5 A), worst-case P_D ≈ 45 W. With R_thj-case = 1.4 °C/W and T_j(max) = 150 °C, maximum T_c = 150 – (45 × 1.4) = 87 °C. Derating is required above this case temperature.

Can BD910 be used in parallel with another BD910 for higher current?

Parallel operation is not recommended without individual emitter resistors and matched h_FE/V_BE characteristics. The BD910 lacks built-in current-sharing features like integrated ballast resistors. Uneven current division may occur due to parameter spread; ST does not specify parallel derating curves or recommend it in the datasheet.

Does BD910 require a heatsink in a 5 A, 24 V switching application?

Yes. At 5 A and V_CE(sat) ≈ –1 V, P_D ≈ 5 W. With R_thj-case = 1.4 °C/W and ambient at 50 °C, junction temperature would reach ~120 °C even with modest heatsink (R_thc-a ≈ 10 °C/W). A heatsink is mandatory to maintain T_j < 150 °C and ensure reliability over lifetime.

BD910 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 15 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 2.5A, 10A

Current - Collector Cutoff (Max):: 1mA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 15 @ 5A, 4V

Power - Max:: 90 W

Frequency - Transition:: 3MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

BD910 FAQ

1.How can I place an order for BD910 through Aetrix?

Please submit a Request for Quotation (RFQ) for BD910 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BD910 reliable?

The price and inventory of BD910 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BD910 is usually 5 days.

3.What payment methods are accepted for BD910?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BD910 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BD910?

BD910 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BD910 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BD910?

For technical support, including BD910 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BD910 requirements.

6.How does Aetrix verify that BD910 is sourced from the original manufacturer or authorized distributors?

All BD910 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BD910 meets industry standards.

7.What is the process for return or replacement of BD910?

All BD910 units undergo pre-shipment inspection (PSI). If there is an issue with BD910, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BD910 part is unused and in its original packaging.

Return procedure for BD910:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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