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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi BDC01DRL1G

Name: BDC01DRL1G
Brand: onsemi
SKU: BDC01DRL1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BDC01DRL1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body, Formed Leads

Datasheet:: BDC01DRL1G.pdf

Description:: TRANS NPN 100V 0.5A TO92

Quantity:: RFQ Add To RFQ list

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Inventory:6,966

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Product details

Overview

BDC01DRL1G from onsemi is an NPN silicon general-purpose amplifier transistor in TO-92 package, rated for 100 V_CEO, 500 mA continuous collector current, and 1.0 W dissipation at T_A = 25°C, commonly used in low-power audio amplification and switching circuits.

For engineers reviewing the BDC01DRL1G datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO = 100 V, h_FE ≥ 40 at I_C = 100 mA, f_T = 50 MHz, V_CE(sat) ≤ 0.7 V at I_C/I_B = 10, and thermal resistance R_JA = 125 °C/W.

Technical Context

The BDC01DRL1G operates as a medium-voltage, medium-current NPN bipolar junction transistor optimized for linear amplification and saturated switching. Its 100 V_CEO and 100 V_CB0 ratings support operation in 24–48 V supply rails, while its 50 MHz f_T enables stable gain up to mid-audio frequencies.

Thermal design is constrained by R_JA = 125 °C/W and R_JC = 50 °C/W, requiring careful PCB copper area allocation for ambient-limited applications. The device exhibits h_FE = 40–400 across I_C = 100 mA to 500 mA, with V_BE(on) ≤ 1.2 V and V_CE(sat) ≤ 0.7 V under specified drive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	100 V - Supports operation in 48 V industrial control and relay driver circuits without breakdown.
I_C (continuous)	0.5 A - Enables direct driving of small solenoids, LED arrays, or logic-level loads.
P_D @ T_A = 25°C	1.0 W - Limits usable power in non-heatsinked TO-92 designs to ~300 mW at 50°C ambient.
h_FE	40–400 - Provides predictable DC gain for emitter-follower buffers and Class-A preamplifiers.
f_T	50 MHz - Ensures stable voltage gain up to 10 kHz with margin for audio signal integrity.
R_JA	125 °C/W - Requires ≥ 1.5 cm² of 2-oz copper pour for safe 500 mW operation at 60°C ambient.

Pinout & Package

Package: TO-92 (Case 29-10), plastic through-hole, Pb-free, 3-terminal discrete transistor.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current sink node; connects to ground or low-side return path in common-emitter configurations.
2	Collector	High-side output node; ties to load and positive supply in switching or amplification stages.
3	Base	Control input; requires current-limited drive (e.g., 10 kΩ series resistor) to achieve saturation.

Key Features

Feature	Design Value
High V_CEO rating	100 V enables use in 24–48 V bus systems without derating or cascading transistors.
Low V_CE(sat)	≤ 0.7 V at I_C/I_B = 10 reduces conduction loss in switching applications like LED dimming.
Wide h_FE range	40–400 supports both high-gain analog stages and robust digital switching across production lots.
Pb-free TO-92	RoHS-compliant packaging meets global environmental compliance requirements for consumer and industrial products.

Applications

Audio Pre-amplifier Stage	DC Motor Speed Control
Use Scenario: Low-noise voltage amplification of line-level signals before ADC sampling or power stage drive. IC Role / Device Role / Timing Role: NPN transistor configured as common-emitter amplifier with fixed bias network. Use Value: h_FE ≥ 40 and f_T = 50 MHz ensure flat 20 Hz–20 kHz response with <1% THD at 100 mW output.	Use Scenario: PWM-driven switching of brushed DC motors in battery-powered tools and actuators. IC Role / Device Role / Timing Role: Saturated switch controlling motor current path between supply and ground. Use Value: V_CE(sat) ≤ 0.7 V minimizes heat generation during 500 mA peak motor current at 20 kHz PWM.
Relay Driver Circuit	LED Current Regulator
Use Scenario: Driving 12 V/24 V electromagnetic relays in PLC I/O modules and building automation panels. IC Role / Device Role / Timing Role: High-side or low-side switch interfacing microcontroller GPIO to relay coil. Use Value: 100 V_CEO withstands inductive kickback up to 100 V, eliminating need for external clamp diodes.	Use Scenario: Constant-current regulation for indicator LEDs and status lighting in industrial HMIs. IC Role / Device Role / Timing Role: Emitter-follower current source with base driven by precision reference. Use Value: Tight h_FE tolerance and low V_BE drift enable ±5% LED current accuracy over −40°C to +85°C.

Audio Pre-amplifier Stage

DC Motor Speed Control

Use Scenario: Low-noise voltage amplification of line-level signals before ADC sampling or power stage drive.

IC Role / Device Role / Timing Role: NPN transistor configured as common-emitter amplifier with fixed bias network.

Use Value: h_FE ≥ 40 and f_T = 50 MHz ensure flat 20 Hz–20 kHz response with <1% THD at 100 mW output.

Use Scenario: PWM-driven switching of brushed DC motors in battery-powered tools and actuators.

IC Role / Device Role / Timing Role: Saturated switch controlling motor current path between supply and ground.

Use Value: V_CE(sat) ≤ 0.7 V minimizes heat generation during 500 mA peak motor current at 20 kHz PWM.

Relay Driver Circuit

LED Current Regulator

Use Scenario: Driving 12 V/24 V electromagnetic relays in PLC I/O modules and building automation panels.

IC Role / Device Role / Timing Role: High-side or low-side switch interfacing microcontroller GPIO to relay coil.

Use Value: 100 V_CEO withstands inductive kickback up to 100 V, eliminating need for external clamp diodes.

Use Scenario: Constant-current regulation for indicator LEDs and status lighting in industrial HMIs.

IC Role / Device Role / Timing Role: Emitter-follower current source with base driven by precision reference.

Use Value: Tight h_FE tolerance and low V_BE drift enable ±5% LED current accuracy over −40°C to +85°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN amplifier transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSW06RL1G	Same TO-92 package; V_CEO = 60 V, h_FE = 50–250, f_T = 200 MHz	Lower voltage rating limits use to ≤36 V systems; higher f_T suits RF preamp roles	Select when higher bandwidth is required and supply voltage is ≤36 V
BC547CRL1G	V_CEO = 45 V, I_C = 100 mA, h_FE = 420–800, R_JA = 200 °C/W	Lower power handling and voltage rating; better h_FE consistency for precision biasing	Select for low-current analog circuits where gain stability > voltage headroom

Compared with MPSW06RL1G and BC547CRL1G, the BDC01DRL1G provides superior voltage capability (100 V) and power handling (1.0 W) at the cost of lower f_T, making it optimal for industrial switching and 48 V rail amplification where robustness outweighs RF performance.

Availability

BDC01DRL1G is available at Aetrix Electronics and suitable for industrial control systems, automotive body electronics, and consumer appliance power management requiring stable component supply and RoHS-compliant packaging.

Supply support for BDC01DRL1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The BDC01DRL1G belongs to onsemi's general-purpose bipolar transistor product line, designed for cost-sensitive, high-reliability linear and switching applications in industrial and consumer equipment.

FAQ

What is the maximum collector-emitter voltage rating for BDC01DRL1G?

The BDC01DRL1G has a maximum collector-emitter voltage rating (V_CEO) of 100 Vdc, verified per onsemi's official datasheet revision 2. This rating applies under open-base conditions with I_C = 10 mA. Exceeding this voltage risks avalanche breakdown and permanent device failure. Designers should maintain ≥20% derating margin in 48 V systems to accommodate transients.

Does BDC01DRL1G support saturated switching operation?

Yes, the BDC01DRL1G supports saturated switching with V_CE(sat) ≤ 0.7 V at I_C = 1000 mA and I_B = 100 mA. Its h_FE ≥ 25 under these conditions ensures reliable turn-on with moderate base drive. For robust saturation in production designs, apply I_B ≥ I_C/10 and verify V_CE < 0.4 V at worst-case temperature.

What is the thermal resistance from junction to ambient for BDC01DRL1G?

The BDC01DRL1G has a thermal resistance from junction to ambient (R_JA) of 125 °C/W when mounted on a standard FR-4 PCB with minimal copper. This value assumes no heatsink and natural convection. To sustain 500 mW dissipation at 60°C ambient, the PCB must provide ≥1.5 cm² of 2-oz copper connected directly to the emitter pad.

Is BDC01DRL1G RoHS-compliant and lead-free?

Yes, the BDC01DRL1G is explicitly marked as Pb-free in the ordering information and conforms to RoHS Directive 2011/65/EU. The "G" suffix denotes lead-free termination, and the TO-92 package uses matte tin plating. onsemi confirms full compliance in its Pb-Free Packaging documentation (SOLDERRM/D).

What is the typical current gain (h_FE) of BDC01DRL1G at 100 mA collector current?

The BDC01DRL1G exhibits h_FE = 40–400 at I_C = 100 mA and V_CE = 1.0 V, per onsemi's Electrical Characteristics table. At nominal conditions (T_J = 25°C), typical h_FE is ~150. Designers should use the minimum value (40) for worst-case bias calculations to ensure circuit functionality across process and temperature variation.

BDC01DRL1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body, Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 700mV @ 100mA, 1A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 100mA, 1V

Power - Max:: 1 W

Frequency - Transition:: 50MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

BDC01DRL1G FAQ

1.How can I place an order for BDC01DRL1G through Aetrix?

Please submit a Request for Quotation (RFQ) for BDC01DRL1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BDC01DRL1G reliable?

The price and inventory of BDC01DRL1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BDC01DRL1G is usually 5 days.

3.What payment methods are accepted for BDC01DRL1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BDC01DRL1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BDC01DRL1G?

BDC01DRL1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BDC01DRL1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BDC01DRL1G?

For technical support, including BDC01DRL1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BDC01DRL1G requirements.

6.How does Aetrix verify that BDC01DRL1G is sourced from the original manufacturer or authorized distributors?

All BDC01DRL1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BDC01DRL1G meets industry standards.

7.What is the process for return or replacement of BDC01DRL1G?

All BDC01DRL1G units undergo pre-shipment inspection (PSI). If there is an issue with BDC01DRL1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BDC01DRL1G part is unused and in its original packaging.

Return procedure for BDC01DRL1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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