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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi BDW23ATU

Name: BDW23ATU
Brand: onsemi
SKU: BDW23ATU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BDW23ATU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: BDW23ATU.pdf

Description:: TRANS NPN 60V 6A TO-220-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,300

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Product details

Overview

BDW23ATU from ON Semiconductor (formerly Fairchild) is an NPN epitaxial silicon Darlington transistor in TO-220 package, rated for 60 V V_CEO, 6 A continuous collector current, and 50 W power dissipation at T_C = 25°C; used in high-current switching and audio output stages.

For engineers reviewing the BDW23ATU datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO rating, DC current gain (h_FE ≥ 750 at I_C = 2 A), saturation voltage (V_CE(sat) ≤ 3 V), thermal derating behavior, and complementary pairing with BDW24A.

Technical Context

The BDW23ATU integrates two cascaded NPN transistors in a monolithic Darlington configuration to achieve high current gain and low base drive requirements. It features a built-in parallel emitter-base diode (VF = 1.8 V at IF = 2 A) and operates with V_BE(sat) = 2.5 V at IC = 2 A/IB = 8 mA.

Designed for linear and switching operation up to 150°C junction temperature, it supports pulse currents up to 8 A (PW = 300 µs, duty cycle = 1.5%) and exhibits safe operating area (SOA) compliance across DC, 10 µs, 100 µs, 1 ms, and 10 ms conditions per datasheet Figure 4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines safe DC switching headroom.
I_C (DC)	6 A - Continuous collector current capability at T_C = 25°C; requires heatsinking above ~40°C case temperature.
h_FE	750 min @ I_C = 2 A - Ensures low base drive current (≤8 mA) for full conduction, reducing driver stage complexity.
V_CE(sat)	3 V max @ I_C = 6 A, I_B = 60 mA - Limits conduction loss to ≤18 W at full load, critical for thermal management.
P_C	50 W @ T_C = 25°C - Power dissipation limit requiring TO-220 mounting on ≥10 cm² copper pad or external heatsink.
T_J	150°C - Maximum allowable junction temperature; enables operation in industrial ambient up to 85°C with proper derating.

Pinout & Package

BDW23ATU is housed in a standard TO-220 package with 3 leads: lead 1 (Base), lead 2 (Collector), lead 3 (Emitter); collector tab is electrically connected to pin 2 and must be isolated from chassis unless circuit design permits common-collector grounding.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input node; requires current-limited drive (max I_B = 0.2 A) to avoid second breakdown during switching.
2	Collector	Main high-current output node; electrically tied to metal tab; must be thermally coupled to heatsink with electrical isolation if needed.
3	Emitter	Power return path; carries full load current; often grounded in common-emitter configurations.

Key Features

Feature	Design Value
Darlington architecture	Monolithic dual-NPN structure delivering h_FE ≥ 750 at 2 A, enabling direct microcontroller GPIO drive without external pre-driver.
Integrated clamp diode	Parallel emitter-base diode (V_F = 1.8 V @ 2 A) provides inherent inductive kickback protection in relay/motor drive applications.
High SOA robustness	Validated safe operating area up to 10 ms pulses supports reliable switching of inductive loads without snubbers.
Complementary pairing	Explicitly designed as NPN counterpart to BDW24A (PNP), enabling matched push-pull output stages in Class AB amplifiers.

Applications

Relay & Solenoid Drivers	Audio Output Stages
Use Scenario: Driving 24 V DC solenoids (1–5 A hold current) in industrial PLC I/O modules with microcontroller-level base control. IC Role / Device Role / Timing Role: High-gain switching transistor providing current amplification and inductive energy clamping via integrated diode. Use Value: Eliminates need for external flyback diode and reduces base drive current to <10 mA, simplifying digital I/O interface design.	Use Scenario: Output device in 20 W Class AB audio amplifier for public address systems with ±30 V rails. IC Role / Device Role / Timing Role: Final power gain stage delivering low-distortion, high-current signal to 4–8 Ω speaker loads. Use Value: V_CE(sat) ≤ 3 V and h_FE ≥ 750 ensure stable biasing and minimal thermal drift across output power range.
Motor Control (DC Brushed)	Power Supply Pass Elements
Use Scenario: H-bridge low-side switch controlling bidirectional 12 V/3 A DC motors in automated gate controllers. IC Role / Device Role / Timing Role: High-current switching element handling PWM-driven motor current with fast turn-off aided by Darlington saturation characteristics. Use Value: 8 A pulsed rating and SOA compliance allow 100% duty-cycle operation at reduced load or short bursts at full current.	Use Scenario: Series pass transistor in adjustable linear power supply delivering 0–30 V / 5 A with foldback current limiting. IC Role / Device Role / Timing Role: Regulated current source controlled by error amplifier feedback, dissipating up to 45 W at worst-case dropout. Use Value: 50 W T_C=25°C rating and 150°C T_J enable stable regulation under sustained thermal stress with appropriate heatsinking.

Relay & Solenoid Drivers

Audio Output Stages

Use Scenario: Driving 24 V DC solenoids (1–5 A hold current) in industrial PLC I/O modules with microcontroller-level base control.

IC Role / Device Role / Timing Role: High-gain switching transistor providing current amplification and inductive energy clamping via integrated diode.

Use Value: Eliminates need for external flyback diode and reduces base drive current to <10 mA, simplifying digital I/O interface design.

Use Scenario: Output device in 20 W Class AB audio amplifier for public address systems with ±30 V rails.

IC Role / Device Role / Timing Role: Final power gain stage delivering low-distortion, high-current signal to 4–8 Ω speaker loads.

Use Value: V_CE(sat) ≤ 3 V and h_FE ≥ 750 ensure stable biasing and minimal thermal drift across output power range.

Motor Control (DC Brushed)

Power Supply Pass Elements

Use Scenario: H-bridge low-side switch controlling bidirectional 12 V/3 A DC motors in automated gate controllers.

IC Role / Device Role / Timing Role: High-current switching element handling PWM-driven motor current with fast turn-off aided by Darlington saturation characteristics.

Use Value: 8 A pulsed rating and SOA compliance allow 100% duty-cycle operation at reduced load or short bursts at full current.

Use Scenario: Series pass transistor in adjustable linear power supply delivering 0–30 V / 5 A with foldback current limiting.

IC Role / Device Role / Timing Role: Regulated current source controlled by error amplifier feedback, dissipating up to 45 W at worst-case dropout.

Use Value: 50 W T_C=25°C rating and 150°C T_J enable stable regulation under sustained thermal stress with appropriate heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BDW23A (ON Semi)	Same die, identical specs; BDW23ATU is tape-and-reel variant of BDW23A with TO-220AB body and lead finish per J-STD-020.	No functional difference; TU suffix denotes packaging format only - same electrical and thermal performance.	Select BDW23ATU for automated SMT assembly; BDW23A for manual or through-hole prototyping.
TIP122 (STMicroelectronics)	Lower V_CEO (100 V vs. 60 V), lower h_FE min (1000 vs. 750 at 2 A), higher V_CE(sat) (4 V max), same TO-220 package.	Acceptable in higher-voltage switching but less efficient at 2–6 A due to higher saturation loss and narrower SOA.	Use TIP122 only when >80 V blocking is required; BDW23ATU preferred for 60 V systems needing lower conduction loss.

Compared with BDW23A and TIP122, BDW23ATU offers optimized balance of 60 V rating, 750+ h_FE, and 3 V V_CE(sat) - making it superior for mid-voltage, medium-current linear and switching roles where thermal efficiency and drive simplicity are critical.

Availability

BDW23ATU is available at Aetrix Electronics and suitable for relay drivers, audio amplifiers, DC motor controllers, and linear power supply designs requiring stable component supply and long-term industrial availability.

Supply support for BDW23ATU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (acquired Fairchild Semiconductor in 2016) is a global semiconductor supplier focused on energy-efficient electronics for automotive, industrial, cloud, and IoT applications.

The BDW23ATU belongs to Fairchild's legacy power bipolar transistor family, engineered specifically for high-current linear and switching applications demanding rugged SOA, integrated protection, and complementary PNP pairing.

FAQ

What is the maximum continuous collector current rating for BDW23ATU?

The BDW23ATU is rated for 6 A continuous collector current (I_C) at case temperature T_C = 25°C. Derating is required above this temperature - approximately 0.4 W/°C reduction in power dissipation beyond 25°C, corresponding to ~0.08 A/°C reduction in usable I_C depending on thermal resistance. Full 6 A operation requires adequate heatsinking.

Does BDW23ATU include an integrated protection diode?

Yes, BDW23ATU incorporates a monolithic parallel emitter-base diode with forward voltage V_F = 1.8 V at I_F = 2 A. This diode provides inherent clamping for inductive load flyback energy, eliminating the need for an external flyback diode in relay, solenoid, and DC motor drive circuits.

Is BDW23ATU pin-compatible with BDW24A?

No - BDW23ATU (NPN) and BDW24A (PNP) are complementary devices with identical TO-220 pinout (1=Base, 2=Collector, 3=Emitter), but opposite polarity. They are designed to be used together in push-pull or complementary symmetry circuits, not as drop-in replacements for each other.

What is the DC current gain (h_FE) of BDW23ATU at 6 A collector current?

Per the official datasheet, BDW23ATU guarantees h_FE ≥ 100 at V_CE = 3 V and I_C = 6 A. At lower currents (e.g., I_C = 1 A), h_FE is ≥ 1000; at I_C = 2 A, it is ≥ 750. The gain decreases with increasing current due to Darlington saturation effects.

Can BDW23ATU be used in surface-mount applications?

BDW23ATU uses a through-hole TO-220AB package and is not a surface-mount device. While the "TU" suffix indicates tape-and-reel packaging for automated handling, the part itself requires PCB mounting with leads inserted and soldered through holes. It cannot be reflowed or placed on SMD pads without mechanical adaptation.

BDW23ATU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 6 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 60mA, 6A

Current - Collector Cutoff (Max):: 500µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 750 @ 2A, 3V

Power - Max:: 50 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

BDW23ATU FAQ

1.How can I place an order for BDW23ATU through Aetrix?

Please submit a Request for Quotation (RFQ) for BDW23ATU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BDW23ATU reliable?

The price and inventory of BDW23ATU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BDW23ATU is usually 5 days.

3.What payment methods are accepted for BDW23ATU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BDW23ATU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BDW23ATU?

BDW23ATU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BDW23ATU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BDW23ATU?

For technical support, including BDW23ATU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BDW23ATU requirements.

6.How does Aetrix verify that BDW23ATU is sourced from the original manufacturer or authorized distributors?

All BDW23ATU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BDW23ATU meets industry standards.

7.What is the process for return or replacement of BDW23ATU?

All BDW23ATU units undergo pre-shipment inspection (PSI). If there is an issue with BDW23ATU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BDW23ATU part is unused and in its original packaging.

Return procedure for BDW23ATU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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