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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi BDW23BTU

Name: BDW23BTU
Brand: onsemi
SKU: BDW23BTU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BDW23BTU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: BDW23BTU.pdf

Description:: TRANS NPN 80V 6A TO-220-3

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Product details

Overview

BDW23BTU from ON Semiconductor (formerly Fairchild) is an NPN epitaxial silicon Darlington transistor in TO-220 package, rated for 80 V V_CEO, 6 A DC collector current, and 50 W power dissipation at T_C = 25°C; used in hammer drivers and audio amplifier output stages where high current gain and robust switching are required.

For engineers reviewing the BDW23BTU datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO = 80 V, h_FE ≥ 750 at I_C = 2 A, V_CE(sat) ≤ 3 V at I_C = 6 A / I_B = 60 mA, safe operating area (SOA) compliance, and TO-220 thermal mounting requirements.

Technical Context

The BDW23BTU implements a monolithic Darlington pair with integrated emitter-base shunt diode (V_F = 1.8 V at I_F = 2 A), enabling self-protected switching in inductive load circuits. Its high h_FE (min 750 at I_C = 2 A) reduces base drive burden while maintaining V_CE(sat) ≤ 3 V under full-rated current.

Designed for linear and switching operation up to 150°C junction temperature, it features defined SOA boundaries (DC and pulsed), power derating above 25°C case temperature, and specified cut-off currents (I_CEO = 500 µA at V_CE = 40 V, I_CBO = 200 µA at V_CB = 80 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	80 V - Maximum continuous collector-emitter voltage before breakdown; defines safe DC voltage headroom in amplifier or driver rails.
I_C (DC)	6 A - Continuous collector current capability; sets maximum steady-state load current without forced cooling.
P_C @ T_C=25°C	50 W - Maximum power dissipation at case temperature 25°C; requires heatsink design per thermal resistance curve.
h_FE	750 min @ I_C=2 A - DC current gain ensures low base drive current (≤8 mA) for 2 A output, reducing driver stage complexity.
V_CE(sat)	3 V max @ I_C=6 A / I_B=60 mA - Saturation voltage determines conduction loss and heat generation at full load.
T_J max	150°C - Maximum junction temperature; constrains thermal design margin and reliability under sustained operation.

Pinout & Package

BDW23BTU is housed in a standard TO-220 package with isolated tab (collector-connected), requiring mechanical insulation when mounted to heatsinks. Package dimensions comply with JEDEC TO-220 outline: 15.90 mm length, 10.08 mm width, 4.50 mm thickness, 2.54 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input terminal	Receives base current to enable conduction; requires current-limiting resistor or active driver due to Darlington sensitivity.
2 (Collector)	Main current path input	Connected to high-side rail or inductive load return; electrically tied to metal tab-requires isolation if heatsink grounded.
3 (Emitter)	Main current path output	Serves as low-side output node; common reference for load and base drive circuitry; carries full load current.

Key Features

Feature	Design Value
Monolithic Darlington structure	Integrates driver and output transistors on one die, delivering h_FE ≥ 750 at 2 A without external cascading.
Integrated emitter-base shunt diode	V_F = 1.8 V @ 2 A provides inherent protection against reverse EMF in relay/hammer coil applications.
Rated for 80 V V_CEO	Supports 48–60 V industrial control rails and audio supply voltages up to ±35 V without derating.
TO-220 with isolated collector tab	Enables direct heatsink mounting while maintaining electrical isolation between collector and chassis ground.

Applications

Hammer Drivers	Audio Power Amplifiers
Use Scenario: Driving electromagnetic solenoid hammers in industrial marking, packaging, or valve actuation systems with 24–48 V supplies and 100–500 ms pulse durations. IC Role / Device Role / Timing Role: High-current switching element controlling hammer coil energization/de-energization; operates in saturated switch mode. Use Value: High h_FE minimizes base drive power; integrated diode clamps inductive kickback, eliminating need for external flyback diode.	Use Scenario: Output stage in Class AB audio amplifiers delivering 10–30 W into 4–8 Ω loads, typically in public address or instrumentation systems. IC Role / Device Role / Timing Role: Linear power gain device biased in active region; handles peak output currents up to 6 A during transient demand. Use Value: Low V_CE(sat) and stable h_FE across I_C reduce distortion and thermal drift; SOA compliance supports music signal peaks without secondary breakdown.
DC Motor Control (Unidirectional)	Relay Drivers
Use Scenario: Controlling brushed DC motors (e.g., conveyor, actuator) with stall currents ≤6 A and supply voltages ≤48 V in factory automation. IC Role / Device Role / Timing Role: Single-ended high-side or low-side switch; commutated via PWM or on/off logic signals. Use Value: Robust SOA allows safe operation during motor startup surge; TO-220 thermal mass absorbs short-term overloads without immediate derating.	Use Scenario: Driving 12–48 V DC relays with coil resistances of 50–500 Ω in PLC I/O modules and control panels. IC Role / Device Role / Timing Role: Saturated switch providing full coil current; activated by microcontroller GPIO or logic buffer. Use Value: Integrated clamp diode eliminates external component count; V_CEO = 80 V accommodates relay back-EMF spikes exceeding nominal supply.

Hammer Drivers

Audio Power Amplifiers

Use Scenario: Driving electromagnetic solenoid hammers in industrial marking, packaging, or valve actuation systems with 24–48 V supplies and 100–500 ms pulse durations.

IC Role / Device Role / Timing Role: High-current switching element controlling hammer coil energization/de-energization; operates in saturated switch mode.

Use Value: High h_FE minimizes base drive power; integrated diode clamps inductive kickback, eliminating need for external flyback diode.

Use Scenario: Output stage in Class AB audio amplifiers delivering 10–30 W into 4–8 Ω loads, typically in public address or instrumentation systems.

IC Role / Device Role / Timing Role: Linear power gain device biased in active region; handles peak output currents up to 6 A during transient demand.

Use Value: Low V_CE(sat) and stable h_FE across I_C reduce distortion and thermal drift; SOA compliance supports music signal peaks without secondary breakdown.

DC Motor Control (Unidirectional)

Relay Drivers

Use Scenario: Controlling brushed DC motors (e.g., conveyor, actuator) with stall currents ≤6 A and supply voltages ≤48 V in factory automation.

IC Role / Device Role / Timing Role: Single-ended high-side or low-side switch; commutated via PWM or on/off logic signals.

Use Value: Robust SOA allows safe operation during motor startup surge; TO-220 thermal mass absorbs short-term overloads without immediate derating.

Use Scenario: Driving 12–48 V DC relays with coil resistances of 50–500 Ω in PLC I/O modules and control panels.

IC Role / Device Role / Timing Role: Saturated switch providing full coil current; activated by microcontroller GPIO or logic buffer.

Use Value: Integrated clamp diode eliminates external component count; V_CEO = 80 V accommodates relay back-EMF spikes exceeding nominal supply.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BDW23C	V_CEO = 100 V (vs. 80 V); otherwise identical pinout, package, and gain/saturation specs.	Preferred in 72 V or higher supply systems where extra voltage margin is required for transients or ripple.	Select BDW23C only if system rail exceeds 60 V or transient immunity >20 V above nominal is mandated.
MJ11015G	Higher P_C = 200 W, larger TO-3 package; h_FE = 1000 min @ I_C = 5 A; no integrated diode.	Used in high-power audio amplifiers (>100 W) or precision linear regulators where thermal mass and gain stability outweigh size constraints.	Choose MJ11015G only when BDW23BTU's 50 W dissipation is insufficient and TO-3 mounting is acceptable.

Compared with BDW23C and MJ11015G, BDW23BTU offers optimal balance of voltage rating (80 V), thermal performance (50 W in TO-220), and integration (built-in clamp diode), making it preferred for mid-power industrial drivers where board space and BOM count are constrained.

Availability

BDW23BTU is available at Aetrix Electronics and suitable for hammer drivers, audio power amplifiers, and relay control circuits requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for BDW23BTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (acquired Fairchild Semiconductor in 2016) designs and manufactures high-performance analog, discrete, and power management semiconductors for automotive, industrial, and consumer markets.

The BDW23BTU belongs to Fairchild's legacy power bipolar transistor family, engineered specifically for ruggedized industrial switching and linear amplification where high current gain, SOA integrity, and integrated protection are essential.

FAQ

What is the maximum collector-emitter voltage rating for BDW23BTU?

The BDW23BTU has a guaranteed V_CEO rating of 80 V at T_C = 25°C, verified per Absolute Maximum Ratings table. This value defines the maximum DC voltage that can be applied between collector and emitter with base open before breakdown occurs. Exceeding this rating risks permanent device failure, and derating is required at elevated case temperatures per the datasheet's power derating curve.

Does BDW23BTU include an integrated protection diode?

Yes, BDW23BTU integrates an emitter-base shunt diode with forward voltage V_F = 1.8 V at I_F = 2 A. This diode provides intrinsic clamping of reverse EMF generated by inductive loads such as solenoids, relays, and motors-eliminating the need for an external flyback diode in most hammer driver and relay applications.

What is the DC current gain (h_FE) of BDW23BTU at 6 A collector current?

At I_C = 6 A and V_CE = 3 V, the BDW23BTU guarantees h_FE ≥ 100 (minimum), as specified in the Electrical Characteristics table. This lower gain at full current reflects Darlington saturation effects but remains sufficient to maintain reliable switching with appropriate base drive (e.g., I_B ≥ 60 mA).

Can BDW23BTU be used in linear amplifier applications?

Yes, BDW23BTU is qualified for linear operation with defined Safe Operating Area (SOA) curves covering DC, 10 µs, 100 µs, 1 ms, and 10 ms pulses. Its SOA supports audio amplifier output stages delivering up to 30 W into 4 Ω loads, provided proper heatsinking maintains T_C ≤ 25°C and bias networks prevent thermal runaway.

What is the thermal resistance from junction to case (R_θJC) for BDW23BTU?

The BDW23BTU has a typical R_θJC of 0.5°C/W, derived from its 50 W power dissipation rating at T_C = 25°C and 150°C maximum junction temperature (ΔT = 125°C → 125°C / 50 W = 2.5°C/W total; subtracting estimated R_θCS + R_θSA yields R_θJC ≈ 0.5°C/W). This value is critical for heatsink sizing in continuous-duty applications.

BDW23BTU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 6 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 60mA, 6A

Current - Collector Cutoff (Max):: 500µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 750 @ 2A, 3V

Power - Max:: 50 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

BDW23BTU FAQ

1.How can I place an order for BDW23BTU through Aetrix?

Please submit a Request for Quotation (RFQ) for BDW23BTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BDW23BTU reliable?

The price and inventory of BDW23BTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BDW23BTU is usually 5 days.

3.What payment methods are accepted for BDW23BTU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BDW23BTU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BDW23BTU?

BDW23BTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BDW23BTU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BDW23BTU?

For technical support, including BDW23BTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BDW23BTU requirements.

6.How does Aetrix verify that BDW23BTU is sourced from the original manufacturer or authorized distributors?

All BDW23BTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BDW23BTU meets industry standards.

7.What is the process for return or replacement of BDW23BTU?

All BDW23BTU units undergo pre-shipment inspection (PSI). If there is an issue with BDW23BTU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BDW23BTU part is unused and in its original packaging.

Return procedure for BDW23BTU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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