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onsemi BDW23TU
- Part No.:
- BDW23TU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
BDW23TU.pdf
- Description:
- TRANS NPN 45V 6A TO-220-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,663
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Product details
Overview
BDW23TU from ON Semiconductor (formerly Fairchild) is an NPN epitaxial silicon Darlington transistor in TO-220 package, rated for 45 V VCEO, 6 A DC collector current, and 50 W power dissipation at TC = 25°C; used in hammer drivers and audio amplifier output stages where high current gain and robust thermal handling are required.
For engineers reviewing the BDW23TU datasheet, pinout, applications, or equivalent options, key selection criteria include VCEO/VCBO rating, hFE at 1–6 A, VCE(sat) under pulsed and DC conditions, safe operating area (SOA), and TO-220 thermal mounting compatibility.
Technical Context
The BDW23TU is a monolithic NPN Darlington pair with integrated base-emitter shunt resistor and parallel emitter-base diode, optimized for switching and linear amplification in medium-power applications. It features hFE ≥ 1000 at IC = 1 A and VCE = 3 V, VCE(sat) ≤ 2 V at IC = 2 A / IB = 8 mA, and built-in diode forward voltage (VF) of 1.8 V at IF = 2 A.
Its SOA is defined up to 10 ms pulse width and DC operation, with power derating starting at TC > 25°C (0.4 W/°C reduction). Junction temperature is rated to 150°C, and storage range spans −65°C to +150°C - enabling use in industrial motor drive and audio output stages with forced-air or heatsink cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum continuous collector-emitter voltage before breakdown; defines safe DC switching headroom in 24–40 V rail systems. |
| IC (DC) | 6 A - Sustained collector current capability; determines maximum continuous load current in hammer driver solenoid control. |
| PC | 50 W at TC = 25°C - Thermal power limit at case; requires heatsink design supporting ≥ 0.5°C/W to maintain TJ ≤ 150°C at full load. |
| hFE | 1000 min @ IC = 1 A - High DC current gain reduces required base drive current; enables direct microcontroller GPIO driving with series resistor. |
| VCE(sat) | 2 V max @ IC = 2 A, IB = 8 mA - Low saturation voltage minimizes conduction loss and heat generation in linear amplifier output stage. |
| VF (diode) | 1.8 V @ IF = 2 A - Integrated antiparallel diode clamps inductive kickback in relay/hammer loads without external flyback diode. |
Pinout & Package
BDW23TU uses the standard TO-220AB package (3-lead, straight lead form, insulated tab), with mechanical dimensions matching JEDEC TO-220 outline: 15.90 mm height, 10.08 mm width, 4.50 mm tab thickness, and 2.54 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Base | Control input node; accepts low-current drive (≤200 mA) to switch up to 6 A collector load; requires current-limiting resistor when driven from logic-level sources. |
| 2 (Center) | Collector | Main power output node; electrically connected to metal tab; must be isolated from heatsink unless using insulating washer and thermal pad. |
| 3 (Right) | Emitter | Power return path; common reference for load and base bias network; connects directly to ground or negative rail in low-side switch configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic Darlington structure | Integrates driver and output transistors on single die, delivering hFE ≥ 1000 without external cascading components. |
| Integrated antiparallel diode | On-chip 1.8 V / 2 A diode provides inherent inductive load protection - eliminates need for discrete flyback diode in solenoid/relay drivers. |
| TO-220 thermal interface | Insulated metal tab supports direct mounting to heatsink with thermal resistance as low as 0.5°C/W (with compound and washer), enabling stable 50 W operation. |
| High ruggedness SOA | Rated for 10 ms pulses up to 8 A / 45 V and DC operation up to 6 A / 20 V - suitable for repetitive hammer strike and audio clipping conditions. |
Applications
| Industrial Hammer Drivers | Audio Power Amplifier Output Stage |
|---|---|
Use Scenario: Driving electromagnetic solenoids in automated stamping, riveting, or pneumatic valve actuation systems requiring 20–50 ms high-current pulses. IC Role / Device Role / Timing Role: Low-side switching element controlling solenoid current path; handles 6 A peak with fast turn-on/turn-off enabled by high hFE. Use Value: Integrated flyback diode prevents voltage spikes >100 V during de-energization, eliminating external clamp components and PCB space. | Use Scenario: Final output stage in Class AB audio amplifiers delivering 10–30 W into 4–8 Ω speakers, operating in linear mode with bias current. IC Role / Device Role / Timing Role: Power gain device amplifying line-level signal to speaker-level current; operates in active region with VCE swing between 2–40 V. Use Value: VCE(sat) ≤ 2 V and hFE ≥ 1000 reduce crossover distortion and simplify bias network design versus single bipolar transistors. |
| DC Motor Speed Control | Relay and Contactor Driver |
Use Scenario: PWM-controlled H-bridge half-bridge leg for brushed DC motors in industrial conveyors or robotic joints (24–48 V supply). IC Role / Device Role / Timing Role: High-current switching transistor handling 4–6 A average motor current; switched at 1–20 kHz with <1 µs rise/fall times. Use Value: SOA supports 10 ms pulses at full voltage/current - accommodates motor stall currents without secondary breakdown. | Use Scenario: Direct drive of 24 V / 1 A industrial relays and contactors in PLC I/O modules and safety interlock circuits. IC Role / Device Role / Timing Role: Interface buffer between logic-level controller and inductive coil; provides galvanic isolation via optocoupler-compatible base drive. Use Value: 5 V VEBO and 2.5 V VBE(sat) ensure reliable turn-on with 3.3 V or 5 V MCU outputs using simple series resistor. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN Darlington transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TIP122 | VCEO = 100 V, hFE = 1000 min @ IC = 3 A, PC = 65 W; TO-220 package, same pinout (B-C-E). | Higher voltage rating suits 48–72 V industrial systems; higher power dissipation allows marginally higher ambient temperatures. | Select TIP122 when VCE stress exceeds 45 V or heatsink thermal resistance exceeds 0.45°C/W. |
| BDW23A | VCEO = 60 V, otherwise identical electrical specs and TO-220 pinout; same hFE, VCE(sat), and SOA curves. | Direct upgrade path for designs needing higher blocking voltage while retaining layout and drive circuitry. | Choose BDW23A if system transient overvoltage exceeds 45 V but remains below 60 V - no redesign needed. |
Compared with BDW23TU, TIP122 offers higher voltage headroom and thermal margin but slightly lower hFE consistency at low IC; BDW23A retains identical drive behavior and footprint while extending VCEO to 60 V - making it the most seamless functional alternative.
Availability
BDW23TU is available at Aetrix Electronics and suitable for industrial hammer drivers, audio power amplifier output stages, and DC motor speed control applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for BDW23TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The BDW23TU belongs to ON Semiconductor's legacy power bipolar transistor family, designed specifically for ruggedized medium-power switching and linear amplification in industrial automation and audio systems.
FAQ
What is the maximum continuous collector current rating for BDW23TU?
The BDW23TU is rated for 6 A DC collector current (IC) at case temperature TC = 25°C. This rating assumes adequate heatsinking - power derating applies at 0.4 W/°C above 25°C. At TC = 75°C, maximum usable IC drops to approximately 4.5 A due to thermal limits. Always verify junction temperature using measured case temperature and thermal resistance data from the BDW23TU datasheet.
Does BDW23TU include an integrated flyback diode, and what are its specifications?
Yes, BDW23TU integrates a monolithic antiparallel diode with forward voltage VF = 1.8 V at IF = 2 A. This diode is connected across the collector-emitter terminals and is rated for repetitive 2 A forward current. It provides inherent inductive load protection in hammer drivers and relay circuits, eliminating the need for an external flyback diode in most applications.
What is the pin configuration and package type of BDW23TU?
BDW23TU uses the TO-220AB package with standard 3-lead straight-pin configuration: Pin 1 = Base, Pin 2 = Collector (connected to metal tab), Pin 3 = Emitter. The tab is electrically connected to the collector, so electrical isolation from the heatsink is required unless the heatsink is floating or biased to collector potential.
How does BDW23TU compare to BDW23A in terms of voltage ratings and interchangeability?
BDW23TU has VCEO = 45 V and VCBO = 45 V, while BDW23A is rated for 60 V in both parameters. All other electrical characteristics - including hFE, VCE(sat), SOA, and pinout - are identical. BDW23A can replace BDW23TU in layouts with no changes, provided the higher voltage rating aligns with system transient requirements.
What is the minimum DC current gain (hFE) of BDW23TU at 1 A collector current?
The BDW23TU guarantees hFE ≥ 1000 at test conditions VCE = 3 V and IC = 1 A. This high gain enables direct drive from microcontroller GPIO pins using only a series base resistor (e.g., 1 kΩ for 5 V logic), significantly simplifying base drive circuitry compared to single bipolar transistors requiring multi-stage bias networks.
BDW23TU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 6 A
- Voltage - Collector Emitter Breakdown (Max):
- 45 V
- Vce Saturation (Max) @ Ib, Ic:
- 3V @ 60mA, 6A
- Current - Collector Cutoff (Max):
- 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 750 @ 2A, 3V
- Power - Max:
- 50 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
BDW23TU FAQ
1.How can I place an order for BDW23TU through Aetrix?
Please submit a Request for Quotation (RFQ) for BDW23TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BDW23TU reliable?
The price and inventory of BDW23TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BDW23TU is usually 5 days.
3.What payment methods are accepted for BDW23TU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BDW23TU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BDW23TU?
BDW23TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BDW23TU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BDW23TU?
For technical support, including BDW23TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BDW23TU requirements.
6.How does Aetrix verify that BDW23TU is sourced from the original manufacturer or authorized distributors?
All BDW23TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BDW23TU meets industry standards.
7.What is the process for return or replacement of BDW23TU?
All BDW23TU units undergo pre-shipment inspection (PSI). If there is an issue with BDW23TU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BDW23TU part is unused and in its original packaging.
Return procedure for BDW23TU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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