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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

STMicroelectronics BDW83C-TO218

Name: BDW83C-TO218
Brand: STMicroelectronics
SKU: BDW83C-TO218
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BDW83C-TO218

Manufacturer:: STMicroelectronics

Category:: Single Bipolar Transistors

Package:: TO-218-3, TO-218AC

Datasheet:: BDW83C-TO218.pdf

Description:: TRANS NPN DARL 100V 15A TO-218

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BDW83C from STMicroelectronics is an NPN silicon epitaxial-base power monolithic Darlington transistor in a TO-218 plastic package, designed for high-current linear and switching applications. It delivers 15 A continuous collector current, 100 V V_CEO, 130 W total dissipation at T_c ≤ 25 °C, and DC current gain (h_FE) of 750–20,000 at I_C = 6 A, used in industrial motor drives and high-power audio output stages.

For engineers reviewing the BDW83C datasheet, BDW83C pinout, BDW83C application, or BDW83C equivalent, key selection considerations include sustained 100 V V_CEO(sus), 0.96 °C/W junction-to-case thermal resistance, fast 0.9 µs turn-on time under resistive load, and complementary pairing with BDW84C for push-pull configurations.

Technical Context

The BDW83C integrates a monolithic Darlington pair with built-in base-emitter shunt resistor and optimized epitaxial base structure to achieve high h_FE and low saturation voltage. Its internal schematic shows cascaded NPN transistors enabling high current gain while maintaining robust secondary breakdown immunity.

It operates with V_BE(on) = 2.5 V at I_C = 6 A and exhibits V_CE(sat) = 2.5 V (typ.) at I_C = 6 A / I_B = 12 mA, supporting efficient switching in high-side driver and linear regulator topologies where thermal management via heatsink-mounting is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	100 V - supports operation in 48 V and 72 V industrial bus systems with margin against transient overvoltage
I_C (continuous)	15 A - enables direct drive of medium-power solenoids, relay coils, and DC motor windings without external current boosting
P_tot @ T_c ≤ 25 °C	130 W - requires mechanical mounting to heatsink with thermal interface material for stable junction temperature control
h_FE	750–20,000 - allows low-base-drive-current control from microcontroller GPIO or op-amp outputs in closed-loop power stages
t_on	0.9 µs - ensures minimal switching loss in PWM frequencies up to 100 kHz for SMPS and Class-D amplifier output stages
R_thj-case	0.96 °C/W - defines minimum heatsink thermal resistance needed to maintain T_j ≤ 150 °C at full power

Pinout & Package

Package: TO-218 (SOT-93), plastic case with isolated metal tab for heatsink mounting. Pin 1 = Collector (tab-connected), Pin 2 = Base, Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
1 (Tab)	Collector	Electrically connected to metal tab; must be electrically isolated from heatsink unless circuit design requires common-collector topology
2	Base	Input control terminal; requires current-limited drive due to Darlington's high h_FE and internal base resistor network
3	Emitter	Power return path; referenced to system ground or negative rail in high-side switch configurations

Key Features

Feature	Design Value
Monolithic Darlington architecture	Eliminates external base-resistor biasing and inter-device matching issues in discrete pairs
V_CEO(sus) = 100 V	Guarantees safe operation during inductive load turn-off without snubber networks in 48 V systems
Fast t_on/t_off	0.9 µs / 6 µs enables clean square-wave switching in 50–100 kHz industrial inverters
High h_FE at I_C = 15 A	100 (min) ensures usable gain even at full rated current, reducing base drive power requirements
TO-218 mechanical outline	Standardized footprint compatible with legacy ST power transistor heatsink fixtures and mounting hardware

Applications

Industrial Motor Drives

High-Power Audio Amplifiers

Use Scenario: Driving 1–3 kW brushed DC motors in CNC feed axes and conveyor systems.

IC Role / Device Role / Timing Role: Main power switch in H-bridge half-bridge leg, handling bidirectional 15 A peak current.

Use Value: High h_FE reduces gate-driver complexity; 100 V rating accommodates back-EMF spikes up to 85 V.

Use Scenario: Output stage in 100 W+ Class-AB audio amplifiers for public address and studio monitors.

IC Role / Device Role / Timing Role: Complementary NPN output transistor paired with BDW84C in quasi-complementary emitter-follower configuration.

Use Value: Low V_CE(sat) minimizes quiescent heating; 130 W dissipation supports sustained high-SPL operation.

Switched-Mode Power Supplies

Industrial Solenoid & Relay Drivers

Use Scenario: Primary-side switch in 500 W offline flyback and forward converters.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element operating at 50–100 kHz with resistive-load timing characteristics.

Use Value: 0.9 µs t_on limits overlap loss; 0.96 °C/W R_thj-case enables compact heatsink integration.

Use Scenario: Direct coil driver for 24 V/48 V industrial solenoids and latching relays requiring ≥10 A inrush current.

IC Role / Device Role / Timing Role: Sustained-current linear switch activated by PLC output or microcontroller with optocoupler isolation.

Use Value: V_CEO(sus) = 100 V prevents failure during coil de-energization; built-in Darlington gain eliminates external boost transistor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current NPN Darlington transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BDW93C	V_CEO = 100 V, I_C = 15 A, but h_FE min = 500 (vs. 750 for BDW83C); R_thj-case = 1.0 °C/W	Slightly lower gain and higher thermal resistance limit use in high-frequency switching above 60 kHz	Acceptable where base drive margin exists and thermal headroom is available
TIP142	V_CEO = 100 V, I_C = 10 A (vs. 15 A), h_FE = 1000–5000, R_thj-case = 1.9 °C/W	Limited to ≤10 A continuous; unsuitable for sustained 15 A loads without derating or parallel devices	Only viable for lower-current variants of same application with revised thermal design

Compared with BDW93C and TIP142, the BDW83C offers superior DC current gain at full rated current and the lowest thermal resistance among TO-218 Darlington transistors, making it optimal for space-constrained, high-duty-cycle industrial switching where base drive efficiency and heatsink size are critical.

Availability

BDW83C is available at Aetrix Electronics and suitable for industrial motor drives, high-power audio amplifiers, and switched-mode power supplies requiring stable component supply across multi-year production cycles.

Supply support for BDW83C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The BDW83C belongs to ST's legacy power bipolar transistor family, engineered specifically for ruggedized industrial linear and switching power stages where reliability under thermal stress and high-current transients is non-negotiable.

FAQ

Is BDW83C pin-compatible with BDW93C?

Yes - BDW83C and BDW93C share identical TO-218 (SOT-93) pinout: Pin 1 = Collector (tab), Pin 2 = Base, Pin 3 = Emitter. Both are single-ended NPN Darlington transistors with the same mechanical footprint and mounting hole pattern, enabling direct PCB-level substitution where electrical specifications align.

What is the maximum safe operating frequency for BDW83C in switching mode?

Based on its 0.9 µs turn-on and 6 µs turn-off times under resistive load conditions, BDW83C is reliably usable up to 100 kHz in hard-switched applications. For inductive loads, practical upper limit is ~60 kHz to maintain acceptable switching loss and avoid second breakdown, especially above 50% duty cycle.

Does BDW83C include a built-in base-emitter shunt resistor?

Yes - the BDW83C integrates an internal base-emitter shunt resistor to ensure reliable turn-off and prevent leakage-induced false triggering. This resistor is not externally accessible but contributes to the device's specified I_CBO and I_CEO values, eliminating need for external bleeder resistors in most linear and switching designs.

Can BDW83C be used in parallel configurations?

Yes - BDW83C supports paralleling for higher current capacity, provided emitter-ballast resistors (0.1–0.22 Ω) are used per device and thermal coupling between packages is minimized. Its positive temperature coefficient of V_CE(sat) promotes current sharing, but mismatched h_FE across lots requires individual base current limiting for stability.

BDW83C-TO218 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-218-3, TO-218AC

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN - Darlington

Current - Collector (Ic) (Max):: 15 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 4V @ 150mA, 15A

Current - Collector Cutoff (Max):: 1mA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 750 @ 6A, 3V

Power - Max:: 130 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-218

BDW83C-TO218 FAQ

1.How can I place an order for BDW83C-TO218 through Aetrix?

Please submit a Request for Quotation (RFQ) for BDW83C-TO218 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BDW83C-TO218 reliable?

The price and inventory of BDW83C-TO218 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BDW83C-TO218 is usually 5 days.

3.What payment methods are accepted for BDW83C-TO218?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BDW83C-TO218 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BDW83C-TO218?

BDW83C-TO218 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BDW83C-TO218 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BDW83C-TO218?

For technical support, including BDW83C-TO218 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BDW83C-TO218 requirements.

6.How does Aetrix verify that BDW83C-TO218 is sourced from the original manufacturer or authorized distributors?

All BDW83C-TO218 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BDW83C-TO218 meets industry standards.

7.What is the process for return or replacement of BDW83C-TO218?

All BDW83C-TO218 units undergo pre-shipment inspection (PSI). If there is an issue with BDW83C-TO218, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BDW83C-TO218 part is unused and in its original packaging.

Return procedure for BDW83C-TO218:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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