onsemi BDW93

Overview

BDW93 from ON Semiconductor is an NPN epitaxial silicon Darlington transistor in TO-220 package, rated for 45 V V_CEO, 12 A continuous collector current, and 80 W power dissipation at T_C = 25°C. It serves as a high-current switching device in hammer drivers and audio amplifier output stages, with integrated parallel diode and h_FE ≥ 1000 at I_C = 3 A.

For engineers reviewing the BDW93 datasheet, pinout, applications, or equivalent options, key selection considerations include its 45 V sustaining voltage (BV_CEO(sus)), 2.0 V V_CE(sat) at 5 A/20 mA drive, thermal resistance of 1.5 °C/W (junction-to-case), and complementary pairing with BDW94.

Technical Context

The BDW93 implements a monolithic Darlington pair with built-in emitter-base shunt resistor and integrated antiparallel diode, enabling robust turn-off and flyback energy handling. Its structure supports high DC current gain (h_FE = 1000–20000) across 3–10 A operating range while maintaining low saturation voltage under heavy base drive.

Designed for linear and switching operation up to 150°C junction temperature, it features safe operating area (SOA) curves validated for pulse widths up to 5 ms and DC conditions. Thermal derating begins at T_C = 25°C, with full 80 W dissipation only achievable with effective heatsinking.

Key Specifications

Pinout & Package

BDW93 is housed in a standard TO-220 package with vertical mounting orientation, metal tab electrically connected to collector, and 3-pin configuration optimized for heatsink attachment and PCB through-hole assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington transistor applications.

Compared with BDW93A and TIP122, the BDW93 offers optimal balance of 45 V rating, 2.0 V V_CE(sat), and integrated diode for cost-sensitive 24–36 V industrial drivers-making it preferred where voltage margin and conduction loss are both critical.

Availability

BDW93 is available at Aetrix Electronics and suitable for hammer drivers, audio amplifier output stages, and DC motor control applications requiring stable component supply, long-term industrial lifecycle support, and consistent parametric performance across production batches.

Supply support for BDW93 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global leader in intelligent power and sensing solutions, specializing in high-reliability analog, discrete, and power management semiconductors for industrial, automotive, and computing markets.

The BDW93 belongs to ON Semiconductor's legacy power bipolar transistor family, engineered specifically for ruggedized industrial switching and linear amplification where high current gain, integrated protection, and thermal robustness are mandatory.

FAQ

What is the maximum continuous collector current rating for BDW93?

The BDW93 has a maximum continuous collector current (I_C) rating of 12 A at case temperature T_C = 25°C. This rating assumes adequate heatsinking to maintain junction temperature below 150°C. At elevated case temperatures, current must be derated per the 1.5 °C/W thermal resistance specification-e.g., at T_C = 75°C, maximum I_C drops to approximately 6.7 A. Always verify thermal design using the BDW93 SOA curves and power derating graph.

Does BDW93 include an integrated diode, and what is its forward voltage?

Yes, the BDW93 integrates an antiparallel diode between collector and emitter. Its forward voltage (V_F) is 1.3 V typical at I_F = 5 A and 1.8 V maximum at I_F = 10 A. This diode provides inherent flyback protection for inductive loads such as relays and solenoids, eliminating the need for an external freewheeling diode in many BDW93-based driver designs.

What is the DC current gain (h_FE) of BDW93 at different operating points?

The BDW93 specifies h_FE ≥ 1000 at V_CE = 3 V and I_C = 3 A, ≥ 750 at I_C = 5 A, and ≥ 100 at I_C = 10 A. These values reflect its Darlington structure: gain decreases with increasing collector current but remains sufficient to achieve full saturation with modest base drive-e.g., 20 mA base current fully saturates the BDW93 at 5 A collector current.

Is BDW93 pin-compatible with BDW94, and how do they relate?

No, BDW93 and BDW94 are complementary devices-not pin-compatible. BDW93 is NPN; BDW94 is PNP. They share identical TO-220 package, pinout (Base–Collector–Emitter), and thermal specifications, enabling matched push-pull or H-bridge output stages. The BDW93/A/B/C variants correspond directly to BDW94/A/B/C in voltage rating, allowing system designers to scale blocking voltage symmetrically across both polarities.

What is the safe operating area (SOA) limitation for BDW93 in pulse applications?

The BDW93 SOA curve supports pulsed operation up to 5 ms duration with no second breakdown limitation at V_CE ≤ 45 V and I_C ≤ 12 A, provided peak power stays within the DC limit (80 W) scaled by duty cycle. For example, at 10% duty cycle, average power is limited to 8 W, permitting peak currents up to ~25 A for short pulses. Always reference Figure 5 ("Safe Operating Area") in the official BDW93 datasheet for precise boundary validation.