onsemi BDX33C
- Part No.:
- BDX33C
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
BDX33C.pdf
- Description:
- TRANS NPN DARL 100V 10A TO-220AB
- Quantity:
- Payment:

- Shipping:

Inventory:1,898
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Product details
Overview
BDX33C from ON Semiconductor is a high-gain NPN epitaxial silicon Darlington transistor in TO-220 package, rated for 100 V VCEO, 10 A DC collector current, and 70 W power dissipation at TC = 25°C. It serves as a robust power switching and linear amplification device in motor drivers, power supplies, and industrial control circuits.
For engineers reviewing the BDX33C datasheet, pinout, applications, or equivalent options, key selection criteria include its 100 V blocking capability, 750 minimum hFE at 3 A, 2.5 V VCE(sat), TO-220 thermal interface compatibility, and complementary pairing with BDX34C.
Technical Context
The BDX33C integrates two cascaded NPN transistors in a monolithic Darlington configuration, delivering high current gain (hFE ≥ 750) with low base drive requirements. Its structure supports safe operation up to 150°C junction temperature and includes an integrated parallel emitter-base diode (VF = 4 V at 8 A).
Designed for linear and switching applications, it features VCEO(sus) = 100 V under pulsed test conditions (PW = 300 µs, duty cycle = 1.5%), and exhibits defined safe operating area (SOA) boundaries for both continuous and pulsed current modes per Figure 5 of the datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - Maximum continuous collector-emitter voltage before breakdown; defines upper rail limit in high-side switch or linear regulator designs. |
| IC (DC) | 10 A - Sustained collector current capability; determines heatsink sizing and PCB trace width for steady-state conduction. |
| PC @ TC=25°C | 70 W - Maximum power dissipation at case temperature 25°C; requires active or large passive thermal management above ~50°C ambient. |
| hFE | ≥750 @ IC = 3 A - High DC current gain reduces required base drive current, easing driver circuit design and reducing base resistor power loss. |
| VCE(sat) | 2.5 V @ IC = 3 A, IB = 6 mA - Saturation voltage directly impacts conduction losses and thermal load in switching applications. |
| TJ max | 150°C - Maximum allowable junction temperature; sets thermal design margin and derating curve per Figure 6. |
Pinout & Package
BDX33C uses the standard TO-220 package with metal tab connected to collector for direct heatsinking. Pin 1 is Base, Pin 2 is Collector (tab), Pin 3 is Emitter - verified per datasheet mechanical drawing and pin assignment diagram.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives low-current drive signal to enable high-current conduction between collector and emitter. |
| 2 (Collector) | Main power output terminal / heatsink interface | Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits. |
| 3 (Emitter) | Power return path | Serves as common reference node for load current; often tied to system ground or negative rail in low-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Darlington architecture | Monolithic dual-NPN structure delivers hFE ≥ 750, enabling single-stage high-current switching without external gain stages. |
| Complementary pairing | Exact functional match to BDX34C PNP Darlington, allowing balanced push-pull or H-bridge output stages with matched VCE(sat) and SOA. |
| Integrated parallel diode | Emitter-base diode (VF = 4 V @ 8 A) provides inherent reverse recovery path for inductive loads, reducing need for external flyback diodes. |
| TO-220 thermal interface | Metal tab enables direct mounting to heatsinks with thermal compound; mechanical dimensions fully compliant with JEDEC TO-220AB standard. |
Applications
| DC Motor Control | Linear Power Regulators |
|---|---|
|
Use Scenario: Driving brushed DC motors in industrial actuators requiring 5–10 A peak current and 24–100 V supply rails. IC Role / Device Role / Timing Role: High-current NPN Darlington switch operating in saturation mode for bidirectional H-bridge half-bridge legs. Use Value: 100 V VCEO rating accommodates back-EMF spikes; 2.5 V VCE(sat) limits conduction loss to ≤25 W at 10 A, simplifying thermal design. |
Use Scenario: Pass element in adjustable linear regulators delivering up to 8 A at <10 V dropout for lab-grade instrumentation power supplies. IC Role / Device Role / Timing Role: Series pass transistor controlled by error amplifier feedback loop; operates in active region with forced-air cooling. Use Value: 70 W power rating and 150°C TJ allow stable operation under full-load conditions; high hFE minimizes base drive overhead. |
| AC Solid-State Relays | Welding Control Circuits |
|
Use Scenario: Output stage in opto-isolated AC SSR modules switching resistive loads up to 1 kW at 100 VAC line-derived DC bus. IC Role / Device Role / Timing Role: DC-side switching element triggered by zero-crossing optocoupler; handles pulsed load currents with 15 A ICP rating. Use Value: 15 A pulse current rating supports surge handling during cold filament turn-on; TO-220 package allows compact board layout with isolation barriers. |
Use Scenario: Primary current control in resistance spot welders where precise 5–10 A gate/base drive regulates main SCR/thyristor firing timing. IC Role / Device Role / Timing Role: High-gain current amplifier translating microcontroller PWM into robust thyristor gate trigger pulses. Use Value: hFE ≥ 750 ensures reliable triggering even with marginal MCU GPIO drive; 100 V VCEO withstands transient coupling from primary side. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN Darlington transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TIP142 | Same TO-220 package, 100 V VCEO, but lower hFE (1000 min vs. BDX33C's 750 min); higher VCE(sat) (3.0 V @ 5 A). | Less suitable for low-base-drive systems; requires larger base resistor or additional driver stage. | Select when higher hFE tolerance is acceptable and legacy TIP142 footprint reuse is prioritized. |
| MJ11016 | Higher power rating (150 W), same 100 V rating, but TO-3 package; hFE = 1000 min, VCE(sat) = 2.0 V @ 8 A. | Requires larger PCB real estate and different heatsink interface; better for >10 A continuous use cases. | Select when thermal headroom and long-term reliability at elevated current dominate over board space constraints. |
Compared with TIP142 and MJ11016, the BDX33C offers optimal balance of TO-220 footprint compatibility, 750+ hFE, and 2.5 V VCE(sat)-making it preferred for space-constrained industrial controls where moderate power density and predictable base drive are critical.
Availability
BDX33C is available at Aetrix Electronics and suitable for DC motor control, linear power regulation, and solid-state relay designs requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.
Supply support for BDX33C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete solutions for automotive, industrial, cloud computing, and consumer markets.
The BDX33C belongs to ON Semiconductor's legacy high-power bipolar transistor family, originally developed by Fairchild and optimized for rugged linear and switching applications demanding high current gain, thermal stability, and proven field reliability.
FAQ
What is the maximum continuous collector current rating for BDX33C?
The BDX33C is rated for 10 A DC collector current (IC) at case temperature TC = 25°C. Derating is required above this temperature per the power derating curve in Figure 6 of the datasheet; at TC = 100°C, the usable IC drops to approximately 4.5 A. This rating assumes proper heatsinking and adherence to the Safe Operating Area (SOA) limits defined for both continuous and pulsed operation.
Does BDX33C have a built-in protection diode?
Yes, the BDX33C includes an integrated emitter-base parallel diode with forward voltage VF = 4 V at 8 A, as specified in the Electrical Characteristics table. This diode provides inherent reverse recovery capability for inductive loads, reducing or eliminating the need for an external flyback diode in many switching applications such as motor drivers and relay replacements.
Is BDX33C pin-compatible with other members of the BDX33 series?
No-BDX33C is not pin-compatible with earlier variants like BDX33 or BDX33A/B in terms of voltage ratings, though all share identical TO-220 pinout (Base–Collector–Emitter). The BDX33C is specifically rated for 100 V VCEO and VCBO, whereas BDX33 is limited to 45 V. Substituting without verifying circuit voltage margins may result in premature failure.
What is the typical DC current gain (hFE) of BDX33C and under what conditions is it measured?
The BDX33C has a minimum DC current gain hFE of 750, measured at VCE = 3 V and IC = 3 A per the datasheet's Electrical Characteristics table. This high gain enables efficient base drive with low current, making the BDX33C suitable for direct microcontroller interfacing when combined with appropriate base limiting resistors.
Can BDX33C be used as a direct replacement for BDX34C in a complementary pair?
No-BDX33C is an NPN Darlington transistor and is not a direct replacement for the PNP BDX34C. Instead, it is designed as the complementary counterpart: BDX33C pairs with BDX34C to form matched NPN/PNP Darlington pairs in push-pull, Class AB amplifier, or H-bridge output stages. Using BDX33C in place of BDX34C would invert polarity and cause circuit malfunction.
BDX33C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- NPN - Darlington
- Current - Collector (Ic) (Max):
- 10 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 2.5V @ 6mA, 3A
- Current - Collector Cutoff (Max):
- 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 750 @ 3A, 3V
- Power - Max:
- 70 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BDX33C FAQ
1.How can I place an order for BDX33C through Aetrix?
Please submit a Request for Quotation (RFQ) for BDX33C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BDX33C reliable?
The price and inventory of BDX33C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BDX33C is usually 5 days.
3.What payment methods are accepted for BDX33C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BDX33C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BDX33C?
BDX33C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BDX33C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BDX33C?
For technical support, including BDX33C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BDX33C requirements.
6.How does Aetrix verify that BDX33C is sourced from the original manufacturer or authorized distributors?
All BDX33C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BDX33C meets industry standards.
7.What is the process for return or replacement of BDX33C?
All BDX33C units undergo pre-shipment inspection (PSI). If there is an issue with BDX33C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BDX33C part is unused and in its original packaging.
Return procedure for BDX33C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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