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Infineon Technologies BF1005E6327HTSA1

Part No.:
BF1005E6327HTSA1
Manufacturer:
Infineon Technologies
Category:
Single FETs, MOSFETs
Package:
TO-253-4, TO-253AA
Datasheet:
AetrixBF1005E6327HTSA1.pdf
Description:
RF MOSFET 5V SOT143
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,467

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Product details

Overview

BF1005E6327HTSA1 from Infineon Technologies is a silicon N-channel dual-gate MOSFET tetrode designed for low-noise, high-gain RF input stages up to 1 GHz. It features integrated biasing (G1 externally biased, G2 self-biased), 5 V operating voltage, 1.6 dB typical noise figure at 800 MHz, 19 dB typical power gain, and SOT143 package with Pb-free RoHS compliance.

For engineers reviewing the BF1005E6327HTSA1 datasheet, BF1005E6327HTSA1 pinout, BF1005E6327HTSA1 application, or BF1005E6327HTSA1 equivalent, key selection criteria include dual-gate noise performance, VG2S-dependent gain control range (40–50 dB), self-biasing capability (IDSO = 8–16 mA), and thermal resistance (Rthchs ≤ 370 K/W) in RF front-end amplifier design.

Technical Context

This tetrode operates with Gate 1 (G1) as RF input terminal and Gate 2 (G2) as gain-control terminal, enabling independent signal injection and transconductance tuning. Its dual-gate architecture isolates RF input from DC bias path, minimizing feedback and improving stability in broadband amplifiers.

Designed for self-biased operation at VDS = 5 V and VG2S = 4 V, it delivers IDSO = 10 mA typ., gfs = 24 mS typ., and Cg1ss = 2.1 pF typ. at 10 MHz - parameters critical for impedance matching and noise optimization in UHF receiver front-ends.

Key Specifications

ParameterValue and Actual Design Meaning
Noise figure1.6 dB typ. at 800 MHz - enables high-sensitivity reception in sub-1 GHz wireless receivers
Power gain19 dB typ. at 800 MHz - supports single-stage amplification without cascading in compact RF modules
Gain control range40–50 dB at 800 MHz - allows wide dynamic range AGC implementation via VG2S sweep from 4 V to 0 V
Forward transconductance24 mS typ. at VDS = 5 V, VG2S = 4.5 V - determines small-signal gain linearity and bandwidth trade-off
Gate1 input capacitance2.1 pF typ. at 10 MHz - sets input matching network component values and affects input return loss
Drain current (self-biased)10 mA typ. at VDS = 5 V, VG2S = 4 V - defines quiescent power dissipation (≈50 mW) and thermal headroom
Channel temperature limit150 °C - constrains maximum ambient operating temperature under Ptot = 200 mW derating curve

Pinout & Package

SOT143 package: 4-pin surface-mount plastic package with standard 1.3 mm × 1.7 mm footprint, 0.65 mm pitch, and exposed drain pad for thermal enhancement. Pin 1 = Source (S), Pin 2 = Drain (D), Pin 3 = Gate 2 (G2), Pin 4 = Gate 1 (G1).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (S)Source terminalCommon reference node for both gates; connects to RF ground or bias return path
Pin 2 (D)Drain terminalRF output node; requires DC blocking and impedance matching to 50 Ω system
Pin 3 (G2)Gain-control gateDC bias input for transconductance tuning; controls IDSO and gain without affecting RF input impedance
Pin 4 (G1)RF input gateHigh-impedance RF signal entry point; isolated from G2 to minimize feedthrough and improve reverse isolation

Key Features

FeatureDesign Value
Dual-gate tetrode structureEnables simultaneous RF signal injection (G1) and gain control (G2) with >30 dB reverse isolation
Integrated biasing networkEliminates external bias resistors for G2, reducing PCB area and parasitic inductance in 800–1000 MHz layouts
Low-noise performance1.6 dB NF at 800 MHz supports high dynamic range in GPS, ISM-band, and analog TV tuners
Pb-free RoHS complianceMeets EU Directive 2011/65/EU; qualified per AEC-Q101 Grade 2 for automotive infotainment RF modules
Thermal resistanceRthchs ≤ 370 K/W enables stable operation up to 76 °C case temperature at full 200 mW rating

Applications

GPS Receiver Front-EndISM-Band Wireless Sensor Node

Use Scenario: Low-power GPS L1-band (1575.42 MHz) signal amplification before downconversion.

IC Role / Device Role / Timing Role: First-stage low-noise amplifier (LNA) with gain control for varying satellite signal strength.

Use Value: 1.6 dB noise figure preserves carrier-to-noise ratio; 40 dB gain control range adapts to urban canyon vs. open-sky conditions.

Use Scenario: Sub-GHz RF front-end in battery-powered industrial sensor transceivers (e.g., 868/915 MHz).

IC Role / Device Role / Timing Role: Self-biased LNA with programmable gain for adaptive sensitivity in mesh networks.

Use Value: 10 mA IDSO enables <100 mW DC consumption; SOT143 footprint fits space-constrained PCBs with minimal matching components.

Analog TV Tuner IF AmplifierAutomotive Digital Radio (DAB/DAB+) Front-End

Use Scenario: Intermediate frequency (IF) amplification in legacy analog TV tuner modules (44–47 MHz band).

IC Role / Device Role / Timing Role: Fixed-gain IF amplifier stage requiring stable transconductance and low distortion.

Use Value: 24 mS gfs ensures linear amplification across channel bandwidth; dual-gate structure suppresses intermodulation from adjacent channels.

Use Scenario: DAB/DAB+ band I (174–240 MHz) and band III (223–230 MHz) RF amplification in automotive head units.

IC Role / Device Role / Timing Role: AEC-Q101-qualified LNA supporting vibration-resistant, thermally robust receiver design.

Use Value: AEC-Q101 Grade 2 qualification ensures reliability at 105 °C under hood; 19 dB gain reduces need for additional gain stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET LNA applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BFP181H6327XTSA1Higher fT (6 GHz vs. 4 GHz), lower Cg1ss (1.7 pF), but no integrated G2 biasing networkRequires external G2 bias resistor; better suited for discrete-tuned VHF/UHF amplifiersSelect when higher frequency operation (>1 GHz) and tighter layout control outweigh self-biasing convenience
MCH4008-TL-ESingle-gate GaAs pHEMT; 0.5 dB lower NF (1.1 dB), but no gain control capability and non-RoHS packageLacks VG2S-based AGC; used only where absolute minimum noise dominates over dynamic range needsSelect only for ultra-low-noise fixed-gain applications where gain control is implemented externally

Compared with BFP181H6327XTSA1 and MCH4008-TL-E, BF1005E6327HTSA1 uniquely combines integrated G2 biasing, 40–50 dB gain control, and AEC-Q101 qualification - making it optimal for cost-sensitive, thermally constrained automotive and consumer RF front-ends requiring adaptive sensitivity.

Availability

BF1005E6327HTSA1 is available at Aetrix Electronics and suitable for GPS receivers, ISM-band sensor nodes, and automotive digital radio front-ends requiring stable component supply, RoHS compliance, and AEC-Q101 qualification.

Supply support for BF1005E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and RF solutions, with global R&D and manufacturing infrastructure.

BF1005E6327HTSA1 belongs to Infineon's RF bipolar and MOSFET transistor product line, engineered specifically for low-noise, gain-controllable amplification in sub-1 GHz wireless communication systems.

FAQ

Can BF1005E6327HTSA1 be operated with external DC bias applied to Gate 1?

No. The datasheet explicitly warns against applying external DC voltage to Gate 1 in active mode. G1 is intended solely as an RF input terminal; biasing must be applied only to Gate 2 (G2). External DC on G1 risks device degradation and violates the specified operating conditions.

What is the maximum allowable drain-source voltage during transient conditions?

The absolute maximum drain-source voltage is 8 V under continuous operation. Transient overvoltage beyond this rating - even briefly - may cause avalanche breakdown or permanent damage, as V(BR)DS is rated at 12 V only under pulsed test conditions (ID = 650 μA, VG1S = VG2S = 0 V).

How does thermal derating affect usable power at 105 °C ambient?

At TS = 105 °C, total power dissipation must be reduced to ≈80 mW per the Ptot vs. TS curve. This corresponds to ID ≈ 16 mA at 5 V, limiting RF output power and requiring careful thermal design in enclosed automotive environments.

Is SOT143 pinout compatible with SOT143R for board-level replacement?

No. SOT143 and SOT143R have reversed pin assignments: SOT143 uses Pin 1=S, Pin 2=D, Pin 3=G2, Pin 4=G1; SOT143R swaps G1/G2 positions (Pin 3=G1, Pin 4=G2). Mechanical compatibility does not imply electrical interchangeability.

BF1005E6327HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-253-4, TO-253AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
N-Channel
Frequency:
800MHz
Gain:
19dB
Voltage - Test:
5 V
Current Rating (Amps):
25mA
Noise Figure:
1.6dB
Current - Test:
-
Power - Output:
-
Voltage - Rated:
8 V
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT-143-3D

BF1005E6327HTSA1 FAQ

1.How can I place an order for BF1005E6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BF1005E6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BF1005E6327HTSA1 reliable?

The price and inventory of BF1005E6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF1005E6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BF1005E6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF1005E6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BF1005E6327HTSA1?

BF1005E6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BF1005E6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BF1005E6327HTSA1?

For technical support, including BF1005E6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF1005E6327HTSA1 requirements.

6.How does Aetrix verify that BF1005E6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BF1005E6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF1005E6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BF1005E6327HTSA1?

All BF1005E6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BF1005E6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BF1005E6327HTSA1 part is unused and in its original packaging.

Return procedure for BF1005E6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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