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Infineon Technologies BF1005SE6327HTSA1
- Part No.:
- BF1005SE6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- TO-253-4, TO-253AA
- Datasheet:
-
BF1005SE6327HTSA1.pdf
- Description:
- RF MOSFET 5V SOT143
- Quantity:
- Payment:
- Shipping:
Inventory:2,863
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Product details
Overview
BF1005SE6327HTSA1 from Infineon Technologies is a silicon N-channel dual-gate MOSFET tetrode designed for low-noise, high-gain RF input stages up to 1 GHz. It features integrated biasing (VG2S = 4 V self-bias), 8 V drain-source rating, 25 mA continuous drain current, and 1.6 dB typical noise figure at 800 MHz - deployed in FM/AM tuner front-ends and cellular receiver LNA modules.
For engineers reviewing the BF1005SE6327HTSA1 datasheet, BF1005SE6327HTSA1 pinout, BF1005SE6327HTSA1 application, or BF1005SE6327HTSA1 equivalent, key selection criteria include verified 22 dB typical power gain at 800 MHz, gate-controlled gain range of 40–50 dB, SOT143 package thermal resistance ≤370 K/W, and AEC-Q101 qualification for automotive RF subsystems.
Technical Context
This tetrode operates with Gate 2 (G2) as the primary signal-input control electrode and Gate 1 (G1) as a shielded, DC-biased terminal that isolates input capacitance and suppresses feedback. Its dual-gate architecture enables stable high-frequency amplification without neutralization networks.
It delivers 30 mS typical forward transconductance at VDS = 5 V and VG2S = 4.5 V, with Cg1ss = 2.4 pF and Cdss = 1.3 pF at 100 MHz - parameters validated under self-biased conditions (IDSO = 8–16 mA) and qualified per AEC-Q101 Grade 2 for automotive ambient temperature operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 8 V - sets absolute maximum supply rail for RF amplifier stage without breakdown |
| ID continuous | 25 mA - defines maximum quiescent current for thermal design in SOT143 package |
| gfs typ | 30 mS - determines small-signal voltage gain achievable in common-source configuration |
| F typ @ 800 MHz | 1.6 dB - specifies minimum added noise in receiver front-end applications |
| Gp typ @ 800 MHz | 22 dB - quantifies usable RF power gain under self-biased operating point |
| ∆Gp | 40–50 dB - indicates dynamic gain control range via VG2S sweep from 0 to 4 V |
| Rthchs | ≤370 K/W - defines thermal path resistance from channel to soldering point for PCB layout |
Pinout & Package
SOT143 package: 4-pin surface-mount plastic package with exposed drain pad for thermal conduction; footprint compatible with JEDEC TO-236AB standard; RoHS-compliant, Pb-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Common reference node for both gates and drain; tied to ground in most LNA designs |
| 2 (D) | Drain | RF output node; electrically connected to exposed metal pad for heat dissipation |
| 3 (G2) | Signal Gate | Main RF input control electrode; bias-adjustable to set IDSO and optimize noise/gain trade-off |
| 4 (G1) | Shield/Gate | DC-biased shielding gate; reduces Miller effect and improves reverse isolation above 500 MHz |
Key Features
| Feature | Design Value |
|---|---|
| Dual-gate tetrode topology | Enables >40 dB gain control range and <2 dB noise figure without external neutralization |
| AEC-Q101 qualified | Validated for automotive ambient temperatures (−40 °C to +125 °C case) and humidity testing |
| Integrated G2 bias network | Supports stable 8–16 mA IDSO at VDS = 5 V without external resistors or capacitors |
| Low Cg1ss (2.4 pF typ) | Minimizes input loading on preceding RF filter or antenna matching network |
| ESD-sensitive handling | Requires IEC 61340-5-1 compliant handling due to ±50 nA IG2SS leakage specification |
Applications
| FM/AM Radio Tuner Front-End | Cellular Band III Receiver LNA |
|---|---|
Use Scenario: Low-noise amplification of 76–108 MHz FM and 530–1710 kHz AM broadcast signals in automotive head units. IC Role / Device Role / Timing Role: Dual-gate MOSFET configured as common-source LNA with G2 as RF input and G1 as shielded bias gate. Use Value: 1.6 dB noise figure ensures high SNR in weak-signal reception; 22 dB gain compensates for bandpass filter insertion loss. | Use Scenario: First-stage amplification in LTE Band 3 (1710–1785 MHz) receiver paths of telematics control units. IC Role / Device Role / Timing Role: Self-biased tetrode operating at IDSO = 13 mA, VDS = 5 V, providing adjustable gain via VG2S tuning. Use Value: 40–50 dB gain control range allows dynamic AGC implementation without cascaded VGA stages. |
| GPS/GLONASS L1 Band Preselector | ISM Band 868 MHz Receiver Front-End |
Use Scenario: High-selectivity, low-noise amplification ahead of SAW filter in automotive GPS modules. IC Role / Device Role / Timing Role: G2-driven common-source amplifier with G1 grounded to minimize input capacitance variation across temperature. Use Value: Cg1ss = 2.4 pF ensures stable 1.575 GHz input match; Rthchs ≤370 K/W supports continuous operation at TS = 76 °C. | Use Scenario: Sub-GHz ISM receiver front-end in vehicle keyless entry and TPMS receivers. IC Role / Device Role / Timing Role: Low-voltage (5 V), low-current (13 mA) LNA optimized for battery-powered operation. Use Value: 200 mW Ptot at TS ≤76 °C enables compact PCB layout without heatsinking; AEC-Q101 ensures reliability in under-hood environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gate MOSFET LNA applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BFP181H6327XTSA1 | Higher fT (6 GHz vs. 4 GHz), higher IDSS (1.2 mA), no integrated G2 bias network | Requires external bias resistor; better suited for >1 GHz discrete amplifier designs | Select when higher frequency operation (>1.5 GHz) and external bias control are required |
| BF1105E6327HTSA1 | Same SOT143 package, lower noise figure (1.4 dB typ), reduced ∆Gp (35 dB), AEC-Q101 unqualified | Lacks automotive qualification; used in consumer audio tuner modules only | Select for cost-sensitive non-automotive tuners where sub-1.5 dB noise is critical |
Compared with BFP181H6327XTSA1 and BF1105E6327HTSA1, BF1005SE6327HTSA1 uniquely balances automotive qualification, integrated biasing, and 1.6 dB noise performance - making it optimal for production-grade automotive radio front-ends requiring zero external bias components.
Availability
BF1005SE6327HTSA1 is available at Aetrix Electronics and suitable for automotive infotainment systems, telematics control units, and GNSS receiver modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BF1005SE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global R&D and manufacturing infrastructure.
BF1005SE6327HTSA1 belongs to Infineon's BFxxx family of RF tetrodes, engineered specifically for high-linearity, low-noise analog front-ends in automotive broadcast and wireless communication systems.
FAQ
Can BF1005SE6327HTSA1 be operated with external DC bias applied to Gate 1?
No. The datasheet explicitly warns against applying external DC voltage to Gate 1 in active mode. G1 is intended solely as a shielded, grounded or AC-coupled terminal to suppress feedback; external bias risks device instability and violates AEC-Q101 stress test conditions.
What is the maximum allowable junction temperature during continuous operation?
The channel temperature (Tch) limit is 150 °C. With Rthchs ≤370 K/W and maximum ambient temperature of 125 °C (AEC-Q101 Grade 2), continuous operation requires maintaining case temperature TS ≤76 °C to ensure Ptot ≤200 mW and avoid thermal runaway.
Is the SOT143 package lead-free and RoHS-compliant?
Yes. BF1005SE6327HTSA1 uses a Pb-free, RoHS-compliant SOT143 package as confirmed in the official Infineon datasheet revision 2007-04-20. No lead-containing variants are standard; special Pb-containing versions require explicit request and are not recommended.
How does gain control range (∆Gp) vary with frequency?
∆Gp is specified as 40–50 dB at 800 MHz. At 100 MHz, the range expands to ~55 dB due to higher |S21|² slope versus VG2S; at 1.5 GHz, it compresses to ~30 dB as transconductance roll-off reduces effective control authority.
BF1005SE6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-253-4, TO-253AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel
- Frequency:
- 800MHz
- Gain:
- 22dB
- Voltage - Test:
- 5 V
- Current Rating (Amps):
- 25mA
- Noise Figure:
- 1.6dB
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
- 8 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT-143-3D
BF1005SE6327HTSA1 FAQ
1.How can I place an order for BF1005SE6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF1005SE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF1005SE6327HTSA1 reliable?
The price and inventory of BF1005SE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF1005SE6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BF1005SE6327HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF1005SE6327HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF1005SE6327HTSA1?
BF1005SE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF1005SE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF1005SE6327HTSA1?
For technical support, including BF1005SE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF1005SE6327HTSA1 requirements.
6.How does Aetrix verify that BF1005SE6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BF1005SE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF1005SE6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BF1005SE6327HTSA1?
All BF1005SE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BF1005SE6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF1005SE6327HTSA1 part is unused and in its original packaging.
Return procedure for BF1005SE6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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